pa1556ah
Abstract: PA1501H nec PA1501H PA1556A PA1550H PA1556 PA1522H uPA1712 pa1560h 2sk3326
Text: NEC Power MOS FET Low Voltage MOS FET Series High Voltage MOS FET Series Semi Power MOS FET MOS FET Array NEC Power MOS FET N7-L Series Low Voltage Power MOS FET Lower On-state Resistance Easier drive by 4V, 4.5V, CMOS Logic IC N5-H Series High Voltage Power MOS FET
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Original
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O-251/-252,
O-220/-262
SC-96
SC-95
SC-96
OT-23)
D10702EJAV0PF00
pa1556ah
PA1501H
nec PA1501H
PA1556A
PA1550H
PA1556
PA1522H
uPA1712
pa1560h
2sk3326
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PDF
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2SK1960
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1960 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1960 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an
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Original
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2SK1960
2SK1960
C10535E
MEI-1202
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PDF
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2SK1959
Abstract: C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1959 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1959 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an
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Original
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2SK1959
2SK1959
C10535E
MEI-1202
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PDF
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marking G21
Abstract: 2SK1958 C10535E MEI-1202
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1958 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK1958 is an N-channel vertical MOS FET. Because PACKAGE DIMENSIONS in mm it can be driven by a voltage as low as 1.5 V and it is not 2.1 ±0.1 necessary to consider a drive current, this FET is ideal as an
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Original
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2SK1958
2SK1958
marking G21
C10535E
MEI-1202
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PDF
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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Original
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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PDF
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A2282
Abstract: n channel mosfet 300v 80a
Text: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - F A P - IIA • Features • • • • • • • S E R IE S I Outline Drawings High speed sw itching
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OCR Scan
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2SK1939-01
A2282
n channel mosfet 300v 80a
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PDF
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A2293
Abstract: No abstract text available
Text: 2SK1943-01 FUJI POWER M O S-FET N-CHANNEL SILICON POWER MOS-FET -FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage
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OCR Scan
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2SK1943-01
20Kfi)
zgTi30
A2293
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PDF
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A2292
Abstract: 2SK1942-01 SC-65
Text: 2SK1942-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES I Features Outline Drawings 'High speed switching >L>w on-resistance 'No secondary breakdown ' L w driving power 'High voltage ' V CS = ±30V Guarantee •Avalanche-proof I Applications
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OCR Scan
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2SK1942-01
Tc-25Â
SC-65
A2292
2SK1942-01
SC-65
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PDF
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a2305
Abstract: A2307 2sk1969 N CH MOSFET
Text: 2SK1969-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ -FAP-IIIA SERIES • Features IOutline Drawings • Hig i current • Low on-resistance • No secondary breakdown • L o v driving power • H ig i forward Transconductance
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OCR Scan
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2SK1969-01
a2305
A2307
2sk1969
N CH MOSFET
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PDF
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a2324
Abstract: k1986 A2325 2SK1986-01 T0220AB A2323
Text: 2SK1986-01 FUJI PO W E R M O S-FET N-CHANNEL SILICON POWER MOS-FET -FAP-IIA SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hicjh voltage
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OCR Scan
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2SK1986-01
T0220AB
SC-46
A2-324
A2-325
a2324
k1986
A2325
2SK1986-01
T0220AB
A2323
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PDF
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2SK1936-01
Abstract: SC-65 A227 RFT M-1
Text: 2SK1936-01 FUJI POWER MOS-FET N CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching • _ow on-resistance • Mo secondary breakdown • _ow driving power • High voltage • yGS=±30V Guarantee • Avalanche-proof
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OCR Scan
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2SK1936-01
SC-65
2SK1936-01
SC-65
A227
RFT M-1
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PDF
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TFK u 269
Abstract: tfk 731 2SK1917-MR T151 3 TFK 140 TFK diode
Text: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications
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OCR Scan
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2SK1917-MR
SC-67
TFK u 269
tfk 731
2SK1917-MR
T151
3 TFK 140
TFK diode
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PDF
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str f 6467
Abstract: STR 6467 2SK191 9vtfr 2SK1917-MR T151
Text: 2SK1917-MR FUJI POWER MOS-FET N-CMANIMEL SILICON POWER MOS-FET F -II SERIES • Features ■ Outline Drawings • Hich speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • VGS—+ 30V Guarantee ■ Applications
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OCR Scan
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2SK1917-MR
SC-67
IZHTS3033-t
str f 6467
STR 6467
2SK191
9vtfr
2SK1917-MR
T151
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PDF
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193701
Abstract: 2SK1937-01 equivalent RA6T
Text: 2SK1937-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - F A P - I I A S E R I E S • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage
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OCR Scan
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2SK1937-01
--20KH)
193701
2SK1937-01 equivalent
RA6T
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PDF
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2SK1939
Abstract: 2SK1939-01 SC-65 T151 A2281
Text: 2SK1939-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance 03,2±O.l 45*0-2 • No secondary breakdown • Low driving power • High voltage Gate • V GS-=t30V Guarantee
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OCR Scan
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2SK1939-01
SC-65
2SK1939
2SK1939-01
SC-65
T151
A2281
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PDF
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2sk1937
Abstract: n channel mosfet 300v 80a 2SK1937-01 SC-65
Text: 2SK1937-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V CS- ± 3 0 V Guarantee • Avalanche-proof
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OCR Scan
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2SK1937-01
SC-65
20Kfi)
2sk1937
n channel mosfet 300v 80a
2SK1937-01
SC-65
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PDF
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A2293
Abstract: NF C 93-400 2SK1943-01
Text: 2SK1943-01 FU JI POWER M OS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • Hiyh voltage • V r>;- ±30V Guarantee • Avalanche-proof
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OCR Scan
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O-220AB
SC-46
A2293
NF C 93-400
2SK1943-01
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PDF
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2SK1982
Abstract: T151
Text: 2SK1982-01 MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • F eatures • High speed switching • Lew on-resistance • No secondary breakdown • Low driving power • High voltage • V S= + 30 V Guarantee • Avalanche-proof
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OCR Scan
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2SK1982-01
SC-67
2SK1982
T151
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PDF
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2SK1940
Abstract: No abstract text available
Text: 2SK1940-01 FUJI POWER MOS-FET N- CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed sw itching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • V gs = ± 3 0 V Guarantee • Avalanche-proof
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OCR Scan
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2SK1940-01
2SK1940
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SK1982-01 M R FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching • Lew on-resistance • No secondary breakdown • Low driving power • High voltage Gate • V S = + 3 0V Guarantee
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OCR Scan
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2SK1982-01
SC-67
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PDF
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K1981
Abstract: No abstract text available
Text: 2SK1981-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET -FAP-IIA SERIES • features • H g h speed sw itching • L o w on-resistance • N 5 seco n d ary breakdow n • Lo w driving pow er • H g h voltage
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OCR Scan
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2SK1981-01
20Kfi)
1V14-í
K1981
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PDF
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K1946
Abstract: tz 1290 cs 740 mosfet a2302 2SK1946-01MR
Text: 2SK1946-01 M R FUJI PO W ER M O S-FET N-CHANNEL SILICON POWER MOS-FET FAP-UI SERIES Outline Drawings • features • High current 4.5±0.2 • Low on-resistance 2,7±0.2 • No secondary breakdown • Low driving power • High forward Transconductance 1 ^ Gite
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OCR Scan
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2SK1946-01
Tc-25Â
SC-67
K1946
tz 1290
cs 740 mosfet
a2302
2SK1946-01MR
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PDF
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T151M
Abstract: E9H diode
Text: 2SK1945-01 L. S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • Hhjh speed switching • • • • Low on-resistance No secondary breakdown Low driving power High voltage • V c .;= ± 30 V Guarantee • Avalanche-proof
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OCR Scan
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2SK1945-01
20Kfi)
T151M
E9H diode
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PDF
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NF C 93-400
Abstract: 2SK1944-01 SC-65 A2297
Text: 2SK1944-01 F U JI PO W ER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • High speed switching • l ow on-resistance • No secondary breakdown • l ow driving power • High voltage • V gs = ±30V Guarantee • Avalanche-proof
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OCR Scan
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2SK1944-01
SC-65
20Kil)
NF C 93-400
2SK1944-01
SC-65
A2297
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PDF
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