fet alternator regulator circuit
Abstract: ic 3361 3361d alternator circuit diagram 200D1 alternator rectifier CS-3361D14 CS-3361DR14 alternator ic connection transistor ignition circuit
Text: CS-3361 CS-3361 Alternator Voltage Regulator FET Driver Features Description The CS-3361 integral alternator regulator integrated circuit provides the voltage regulation for automotive, 3-phase alternators. It drives an external logic level N channel enhancement power FET
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CS-3361
CS-3361
CS-3361D14
CS-3361DR14
fet alternator regulator circuit
ic 3361
3361d
alternator circuit diagram
200D1
alternator rectifier
CS-3361D14
CS-3361DR14
alternator ic connection
transistor ignition circuit
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8010c
Abstract: EUP8010D TDFN-10 8010-D EUP8010C-JIR1 EUP8010A-JIR1 EUP8010B-JIR1 EUP8010X EUP8010B 200A battery charger
Text: EUP8010X Linear Li-Ion/Polymer Charger IC with Integrated FET and Charger Timer DESCRIPTION FEATURES The EUP8010X series are highly integrated single cell Li-Ion/Polymer battery charger IC designed for handheld devices. The EUP8010X integrates internal power FET,
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EUP8010X
EUP8010X
automatical10X
DS8010X
TDFN-10
8010c
EUP8010D
TDFN-10
8010-D
EUP8010C-JIR1
EUP8010A-JIR1
EUP8010B-JIR1
EUP8010B
200A battery charger
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TDFN-10
Abstract: 8010b EUP8010A-JIR1 EUP8010B-JIR1 EUP8010C-JIR1 EUP8010X 8010c
Text: 芯美电子 EUP8010X Linear Li-Ion/Polymer Charger IC with Integrated FET and Charger Timer DESCRIPTION FEATURES The EUP8010X series are highly integrated single cell Li-Ion/Polymer battery charger IC designed for handheld devices. The EUP8010X integrates internal power FET,
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EUP8010X
EUP8010X
DS8010X
TDFN-10
TDFN-10
8010b
EUP8010A-JIR1
EUP8010B-JIR1
EUP8010C-JIR1
8010c
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Untitled
Abstract: No abstract text available
Text: BUK7Y13-40B N-channel TrenchMOS logic level FET Rev. 01 — 24 September 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK7Y13-40B
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LFPAK
Abstract: BUK7Y13-40B airbag
Text: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 02 — 2 October 2007 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode power Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
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BUK7Y13-40B
LFPAK
BUK7Y13-40B
airbag
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SLD-3091FZ
Abstract: SLD3091FZ GaN Bias 25 watt InP transistor HEMT 915 MHz RFID 27PF A191 22UF
Text: SLD-3091FZ 30 Watt Discrete LDMOS FET in Ceramic Flanged Package SLD-3091FZ Preliminary 30 WATT DISCRETE LDMOS FET IN CERAMIC FLANGED PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: A191 Product Description Features 30 Watt Output P1dB
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SLD-3091FZ
SLD-3091FZ
EDS-104668
SLD3091FZ
GaN Bias 25 watt
InP transistor HEMT
915 MHz RFID
27PF
A191
22UF
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BUK7Y13-40B
Abstract: automotive abs 10S100
Text: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y13-40B
BUK7Y13-40B
automotive abs
10S100
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Untitled
Abstract: No abstract text available
Text: SN74CBT3306 DUAL FET BUS SWITCH SCDS016H − MAY 1995 − REVISED JANUARY 2004 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels D OR PW PACKAGE TOP VIEW 1OE 1A 1B GND description/ordering information The SN74CBT3306 dual FET bus switch features
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SN74CBT3306
SCDS016H
SN74CBT3306D
SN74CBT3306DR
SN74CBT3306PW
SN74CBT3306PWR
CU306
CU306
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SLD-2083CZ
Abstract: 915 MHz RFID SLD2083CZ GaN Bias 25 watt j20 Schematic InP transistor HEMT transistor BJT Driver smd transistor ne c2
Text: SLD-2083CZ SLD-2083CZ 12 Watt Discrete LDMOS FET in Ceramic Package 12 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS Package: RF083 Product Description Features 12 Watt Output P1dB Single Polarity Supply Voltage High Gain: 18 dB at 915 MHz
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SLD-2083CZ
RF083
SLD-2083CZ
SLD2083CZ
600S120FT250XT
600S6R8BT250XT
0603CS-16NXJB
0603CS-1N6XJB
0603CS-4N7XJB
915 MHz RFID
GaN Bias 25 watt
j20 Schematic
InP transistor HEMT
transistor BJT Driver
smd transistor ne c2
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Untitled
Abstract: No abstract text available
Text: BUK7Y13-40B N-channel TrenchMOS standard level FET Rev. 03 — 26 May 2008 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This
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BUK7Y13-40B
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SLD-1083CZ
Abstract: GaN Bias 25 watt SLD1083CZ InP transistor HEMT 600S680JT250XT
Text: SLD-1083CZ SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package 4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: RF083 Product Description Features 4 Watt Output P1dB Single Polarity Supply Voltage
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SLD-1083CZ
RF083
SLD-1083CZ
SLD1083CZ
600S680JT250XT
T494D106M035AS
ECJ2YB1H104K
ERJ-3EKF3240V
ERJ6GEY0R00V
GaN Bias 25 watt
InP transistor HEMT
600S680JT250XT
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SN74CBT3306PW
Abstract: SN74CBT3306PWR CU306 SN74CBT3306 SN74CBT3306D SN74CBT3306DE4 SN74CBT3306DG4 SN74CBT3306DR
Text: SN74CBT3306 DUAL FET BUS SWITCH SCDS016H − MAY 1995 − REVISED JANUARY 2004 D 5-Ω Switch Connection Between Two Ports D TTL-Compatible Input Levels D OR PW PACKAGE TOP VIEW 1OE 1A 1B GND description/ordering information The SN74CBT3306 dual FET bus switch features
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SN74CBT3306
SCDS016H
SN74CBT3306
SN74CBT3306PW
SN74CBT3306DR
SN74CBT3306D
SN74CBT3306PWR
CU306
SN74CBT3306PW
SN74CBT3306PWR
CU306
SN74CBT3306D
SN74CBT3306DE4
SN74CBT3306DG4
SN74CBT3306DR
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PH5030AL
Abstract: PH5030
Text: PH5030AL N-channel TrenchMOS logic level FET Rev. 03 — 12 January 2010 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PH5030AL
PH5030AL
PH5030
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OPA2131UJ
Abstract: No abstract text available
Text: O PA OPA1 OPA 131 OPA2 31 2131 O PA OPA131 OPA2131 OPA4131 4131 OP A41 31 131 OPA4 131 SBOS040A – NOVEMBER 1994 – REVISED DECEMBER 2002 General-Purpose FET-INPUT OPERATIONAL AMPLIFIERS FEATURES ● FET INPUT: IB = 50pA max ● LOW OFFSET VOLTAGE: 750µV max
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OPA131
OPA2131
OPA4131
SBOS040A
OPA2131UJ
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PSMN5R0-30YL
Abstract: jmb 363
Text: PSMN5R0-30YL N-channel TrenchMOS logic level FET Rev. 02 — 5 January 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in
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PSMN5R0-30YL
PSMN5R0-30YL
jmb 363
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SPF-2086TKZ
Abstract: spf2086tkz SPF-2086TKZ applications 54-101 SPF-2086tk SPF2086TK hbt sot-86
Text: SPF-2086TKZ SPF-2086TKZ Low Noise pHEMT GaAs FET 0.1 GHz to 12 GHz Operation LOW NOISE pHEMT GaAs FET 0.1 GHz to 12 GHz OPERATION NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features Si BiCMOS SiGe HBT 20 10
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SPF-2086TKZ
OT-86
EDS-101225
SPF-2086TKZ
spf2086tkz
SPF-2086TKZ applications
54-101
SPF-2086tk
SPF2086TK
hbt sot-86
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MA-336-CP
Abstract: No abstract text available
Text: O V m iM PlL O G SYSTEM S 336 005164 p s€> Low-Noise, Qui-Fet Dual Operational A m plifier General D escription MA-336 is a dual iow-noise FET input operational am plifier using Analog System’s QUI-FET input tech nology. Input noise voltage is only 33% of conventional
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MA-336
35S79
293-4923g
MA-336-CP
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Untitled
Abstract: No abstract text available
Text: Alternator Voltage Regulator FET Driver Description The CS-3361 integral alternator reg ulator integrated circuit provides the voltage regulation for autom o tive, 3-phase alternators. It drives an external logic level N channel enhancem ent pow er FET
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CS-3361
2Gb755b
S-3361
14LSO
CS-3361D14
CS-3361DR14
2Db755b
0D03225
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ic 3361
Abstract: alternator circuit diagram fet alternator regulator circuit alternator ic connection Alternator regulator 0D0322S alternator alternator rectifier alternator diode 0022pF
Text: CS-3361 CS-3361 Alternator Voltage Regulator FET Driver Description The CS-3361 integral alternator reg ulator integrated circuit provides the voltage regulation for automo tive, 3-phase alternators. It drives an external logic level N channel enhancem ent pow er FET
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CS-3361
CS-3361
SDb755b
0DD32B4
14LSO
CS-3361D14
14LSO
CS-3361DR14
2Db755b
ic 3361
alternator circuit diagram
fet alternator regulator circuit
alternator ic connection
Alternator regulator
0D0322S
alternator
alternator rectifier
alternator diode
0022pF
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. Description /¿PC4081 J-FET INPUT OPERATIONAL AMPLIFIER Pin Configuration TheAiPC4081 is a single operational amplifier with a com bination of matched ion implanted P-channel J-FET inputs with standard bipolar transistor technology. The
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PC4081
TheAiPC4081
/UPC4081
/JPC4081
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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LD4A
Abstract: High-speed switching P-Channel mos ld3a
Text: XP131A0150SR Power MOS FET ♦ N-Channel Power MOS FET ♦ DMOS Structure • Applications • Notebook PCs ♦ Low On-State Resistance: 0.0 50 MAX ? Cellular and portable phones • On-board power supplies # Li.ion battery systems ♦ Ultra High-Speed Switching
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XP131A0150SR
XP131A0150SR
XP134A11A1SR
XP134A11A1SR
XP134A11A1
LD4A
High-speed switching P-Channel mos
ld3a
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NEC 2561
Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Text: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym
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NE72218
NE72218-T1
NE72218-T2
NEC 2561
nec 2561 le
NEC 2561 LE 301
sem 2105 16 pin
saa 1074
SAA 1061
nec 2561 4 pin
cp 1099
c 945 p 331
saa 1049
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APC UPS es 500 CIRCUIT DIAGRAM
Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.
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ADE-408
50502C
APC UPS es 500 CIRCUIT DIAGRAM
sk 100 gale 065 tf
2SK1058 MOSFET APPLICATION NOTES
APC UPS CIRCUIT DIAGRAM es 725
General Instrument data book
2SK2264
ESI 252 impedance meter
transistor bf 175
PF0144
2SK212
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