LF356 pin diagram
Abstract: IC LF356 LF355L LF355-LF356-LF357 LF157 lf357 equivalent IC LF356 datasheet LF155-LF255-LF355 LF157-LF257-LF357 LF156
Text: . . . . . . . . LF155-LF255-LF355 LF156-LF256-LF356 LF157-LF257-LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS HIGH INPUT IMPEDANCE J-FET INPUT STAGE HIGH SPEED J-FET OP-AMPs : up to 20MHz, 50V/µs OFFSET VOLTAGE ADJUSTMENT DOES NOT DEGRADE DRIFT OR COMMON-MODE
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LF155-LF255-LF355
LF156-LF256-LF356
LF157-LF257-LF357
20MHz,
LF356 pin diagram
IC LF356
LF355L
LF355-LF356-LF357
LF157
lf357 equivalent
IC LF356 datasheet
LF155-LF255-LF355
LF157-LF257-LF357
LF156
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PDF
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sr 4416
Abstract: LF157 LF156 IC LF356 Lf356 application 25R8 LF256
Text: LF155 - LF255 - LF355 LF156 - LF256 - LF356 LF157 - LF257 - LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . . . . . . . . HIGH INPUT IMPEDANCE J-FET INPUT STAGE HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/µs OFFSET VOLTAGE ADJUST DOES NOT DEGRADE DRIFT OR COMMON-MODE
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LF155
LF255
LF355
LF156
LF256
LF356
LF157
LF257
LF357
20MHz,
sr 4416
IC LF356
Lf356 application
25R8
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PDF
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LF356 pin diagram
Abstract: LF157-LF257-LF357 IC LF356 LF157 lf357 equivalent lf156 LF355L LF355-LF356-LF357 LF156-LF256-LF356 LF155
Text: LF155-LF255-LF355 LF156-LF256-LF356 LF157-LF257-LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . . . . . . . . HIGH INPUT IMPEDANCE J-FET INPUT STAGE HIGH SPEED J-FET OP-AMPs : up to 20MHz, 50V/µs OFFSET VOLTAGE ADJUSTMENT DOES NOT DEGRADE DRIFT OR COMMON-MODE
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LF155-LF255-LF355
LF156-LF256-LF356
LF157-LF257-LF357
20MHz,
LF356 pin diagram
LF157-LF257-LF357
IC LF356
LF157
lf357 equivalent
lf156
LF355L
LF355-LF356-LF357
LF156-LF256-LF356
LF155
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PDF
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rjp3053
Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5
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REJ16G0001-1900
rjp3053
RJP3063
rjp6065
RJP2557
RJP3057
RJH30
RQJ0301
RJP3065
rjk5020
RJK2009
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PDF
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ic at 1040a
Abstract: 1kW flyback PFC 10kw pfc 24v active clamp forward converter
Text: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver
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SC531
SC531
ic at 1040a
1kW flyback PFC
10kw pfc
24v active clamp forward converter
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PDF
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Untitled
Abstract: No abstract text available
Text: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver
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SC531
MLPQ-UT-28
SC531
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PDF
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ISL97652
Abstract: ISL97652IRZ ISL97652IRZ-T ISL97652IRZ-TK TB379 t-con tv lcd LCD TV T-con board 41 pin name
Text: ISL97652 December 21, 2006 • AVDD boost up to 19.5V OVP threshold , with integrated 2.8APEAK FET • Overvoltage protection (OVP) • 2A integrated AVDD delay FET, with short circuit protection • Dual charge pump controllers for VON and VOFF • VLOGIC buck with integrated 2.5APEAK FET
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ISL97652
ISL97652
650kHz
FN9287
ISL97652IRZ
ISL97652IRZ-T
ISL97652IRZ-TK
TB379
t-con tv lcd
LCD TV T-con board 41 pin name
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PDF
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Untitled
Abstract: No abstract text available
Text: TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA A N & D % C $ ! # " B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 50V 500MHz SINGLE ENDED H K FEATURES M L J SIMPLIFIED AMPLIFIER DESIGN E F SUITABLE FOR BROAD BAND APPLICATIONS
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D5011UK
500MHz
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GT 1081
Abstract: PLC 168 D5002UK gt 2182
Text: TetraFET D5002UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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D5002UK
175MHz
D5002UK
175MHz
GT 1081
PLC 168
gt 2182
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PDF
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300w amplifier 30mhz
Abstract: 300w rf amplifier uhf D5050UK d5050 30MHZ 500w HF Amplifier 300w 300w rf amplifier
Text: TetraFET D5050UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W – 50V – 30MHz SINGLE ENDED M F FEATURES G • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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D5050UK
30MHz
300w amplifier 30mhz
300w rf amplifier uhf
D5050UK
d5050
30MHZ 500w
HF Amplifier 300w
300w rf amplifier
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PDF
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enamelled copper wire
Abstract: semeLab 051 b649 D5001UK J102 fet
Text: TetraFET D5001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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D5001UK
175MHz
22swg
19swg
B64920A618x830
enamelled copper wire
semeLab 051
b649
D5001UK
J102 fet
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PDF
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J102 fet
Abstract: D5001UK
Text: TetraFET D5001UK METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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D5001UK
175MHz
22swg
19swg
B64920A618x830
J102 fet
D5001UK
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PDF
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transistor t06
Abstract: 828 TRANSISTOR equivalent
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W DESCRIPTION OUTLINEDRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.
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RD00HHS1
30MHz
RD00HHS1
30MHz
48MAX
53MAX
transistor t06
828 TRANSISTOR equivalent
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PDF
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Untitled
Abstract: No abstract text available
Text: TetraFET D5002UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 1 2 4 3 D E M GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W – 50V – 175MHz SINGLE ENDED F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J • SUITABLE FOR BROAD BAND APPLICATIONS
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D5002UK
175MHz
D5002UK
175MHz
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d5030
Abstract: D5030UK 064R
Text: TetraFET D5030UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 400W – 50V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D5030UK
175MHz
13GLURQFRUH
D5030UK
175MHz
d5030
064R
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PDF
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Untitled
Abstract: No abstract text available
Text: TetraFET D5007UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A B C 2 1 D 4 E 3 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 50V – 175MHz SINGLE ENDED M F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H I K J PIN 1 SOURCE PIN 2 DRAIN
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D5007UK
175MHz
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PDF
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LF156
Abstract: LF157 LF356 pin diagram ixlf wideband ampifiers LF155 LF255 LF256 IC LF357 LF355
Text: rZ T LF155 - LF255 - LF355 LF156 - LF256 - LF356 LF157 - LF257 - LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS S G S -T H O M S O N . HIGH INPUT IMPEDANCE J-FET INPUT STAGE . HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/ns • OFFSET VOLTAGE ADJUST DOES NOT
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OCR Scan
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LF155
LF255
LF355
LF156
LF256
LF356
LF157
LF257
LF357
20MHz,
LF356 pin diagram
ixlf
wideband ampifiers
IC LF357
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PDF
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LF156
Abstract: LF157 LF356 pin diagram SCS PI LF155 LF255 LF256 LF257 LF355 LF355N
Text: LF155 - LF255 - LF355 LF156 - LF256 - LF356 [I ê ¥ []M [l(ê S LF157 - LF257 - LF357 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS SGS-THOMSON M ^ » • HIGH INPUT IMPEDANCE J-FET INPUT STAGE > HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/(xs ■ OFFSET VOLTAGE ADJUST DOES NOT
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OCR Scan
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20MHz,
7T2T237
LF156
LF157
LF356 pin diagram
SCS PI
LF155
LF255
LF256
LF257
LF355
LF355N
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PDF
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LF157
Abstract: LF355-LF356-LF357 1012C LF156 LF357 CH pin out of IC LF356 IC LF155
Text: LF155-LF255-LF355 LF156-LF256-LF356 LF157-LF257-LF357 7/ WI DE BANDWI DTH SI NGLE J- FET OPERATI ONAL AMPLI FI ERS . HIGH INPUT IMPEDANCE J-FET INPUT STAGE • HIGH SPEED J-FET OP-AMPs : up to 20MHz, 50V/jis ■ O FFSETVO LTAGEADJUSTM ENTDOESNOT DEGRADE DRIFT OR COMMON-MODE
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OCR Scan
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20MHz,
LF155-LF255-LF355
LF156-LF256-LF356
LF157-LF257-LF357
LF355,
LF356,
LF157
LF355-LF356-LF357
1012C
LF156
LF357 CH
pin out of IC LF356
IC LF155
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PDF
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FZJ 101
Abstract: No abstract text available
Text: C r C . T U n M C n iü o lio m U IY IO U r a LF155 - LF255 LF156 - LF256 - LF355 - LF356 LF157 - LF357 - LF257 WIDE BANDWIDTH SINGLE J-FET OPERATIONAL AMPLIFIERS . HIGH INPUT IMPEDANCE J-FET INPUT STAGE . HIGH SPEED J-FET OP-AMPs : UP to 20MHz, 50V/ns • OFFSET VOLTAGE ADJUST DOES NOT
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OCR Scan
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LF155
LF255
LF156
LF256
LF355
LF356
LF157
LF357
LF257
20MHz,
FZJ 101
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PDF
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2SK2973
Abstract: 165082 mf 102 fet equivalent hd 9729 transistor t 2190 GR40-220 ic 7448 marking c7 sot-89 75458 88284
Text: MITSUBISHI RF POWER MOS FET 2SK2973 SILICON MOS FET TYPE DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. FEATURES * High power gain:Gpe>13dB « VDD=9.6V,f=450MHz,Pin= 17dBm * High efficiency:55% typ.
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OCR Scan
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2SK2973
2SK2973
450MHz
17dBm
OT-89
OT-89
Conditi38
165082
mf 102 fet equivalent
hd 9729
transistor t 2190
GR40-220
ic 7448
marking c7 sot-89
75458
88284
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order th is docum ent by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK-SL Straight-Leaded
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OCR Scan
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MTB3N60E1/D
MTB3N60E1
418C-01
3b725S
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PDF
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transistor d 965 al
Abstract: No abstract text available
Text: iNàiiììian MOTOROLA Order this document by MTB3N60E1/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB3N60E1 TM OS E-FET High Energy Pow er FET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS D2PAK-SL Straight-Leaded
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OCR Scan
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MTB3N60E1/D
1-800-W1-2447
transistor d 965 al
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PDF
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2sk2975
Abstract: 157-299 01 139706 transistor 16870 72477 17053 cetie
Text: MITSUBISHI RF POWER MOS FET 2SK2975 SILICON MOS FET TYPE DESCRIPTION 2SK2975 «S a MOS FET typ« transistor spcofically designed tor VHFrtJHF power air«>Hie<Siipp<»caUO<£ FEATU R ES • High power >*n:Gpcoa.4<Jß Ö Voo-9.6V .<-450M H / Rrv-30dBm • H Q fi e m c n !rc y :W % typ
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OCR Scan
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2SK2975
-450M
Rrv-30dBm
2sk2975
157-299 01
139706
transistor 16870
72477
17053
cetie
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PDF
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