FET C42 Search Results

FET C42 Result Highlights (5)

Part	Manufacturer	Description
RJF0411JPD-00#J3	Renesas Electronics Corporation	Thermal FETs
RJF0411JPD-01#J3	Renesas Electronics Corporation	Thermal FETs
RJF0605JPV-00#Q7	Renesas Electronics Corporation	Thermal FETs
ISL95901IRZ-T	Renesas Electronics Corporation	Integrated FET Regulators
ISL6146DFRZ	Renesas Electronics Corporation	Low Voltage ORing FET Controller

FET C42 Price and Stock

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Analog Devices Inc LTC4217HFE#PBF Hot Swap Voltage Controllers 2A Int Hot Swap Cntr
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Mouser Electronics	LTC4217HFE#PBF		148			1 $12.99 10 $9.55 100 $6.85 1000 $6.32 10000 $6.32	Buy Now
Analog Devices Inc LTC4217IFE#PBF Hot Swap Voltage Controllers 2A Int Hot Swap Cntr
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Mouser Electronics	LTC4217IFE#PBF		97			1 $11.07 10 $8.82 100 $6.29 1000 $5.75 10000 $5.75	Buy Now
Analog Devices Inc LTC4217CFE#PBF Hot Swap Voltage Controllers 2A Int Hot Swap Cntr
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Mouser Electronics	LTC4217CFE#PBF		74			1 $10.76 10 $7.88 100 $5.56 1000 $5.04 10000 $5.04	Buy Now
Analog Devices Inc LTC4217IFE#TRPBF Hot Swap Voltage Controllers 2A Int Hot Swap Cntr
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Mouser Electronics	LTC4217IFE#TRPBF					1 - 10 - 100 - 1000 - 10000 $5.75	Get Quote
Analog Devices Inc LTC4217CFE#TRPBF Hot Swap Voltage Controllers 2A Int Hot Swap Cntr
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Mouser Electronics	LTC4217CFE#TRPBF					1 - 10 - 100 - 1000 - 10000 $5.26	Get Quote

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FET C42 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NEC uPA 63 H Abstract: NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR ,uPA502T N-CHANNEL MOS FET 5-PIN 2 CIRCUITS The pPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. PACKAGE DIMENSIONS (in millimeters) 0.32 +O.’	Original	PDF	uPA502T pPA502T SC-59 pPA503T NEC uPA 63 H NEC uPA 63 NEC uPA 63 a NEC uPA 71 GL124 MEL12 UPA672T UPA572T UPA602 nec sc-59 fet
Untitled Abstract: No abstract text available Text: TetraFET D5011UK METAL GATE RF SILICON FET MECHANICAL DATA A N & D % C $ ! # " B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W 50V 500MHz SINGLE ENDED H K FEATURES M L J SIMPLIFIED AMPLIFIER DESIGN E F SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D5011UK 500MHz
Untitled Abstract: No abstract text available Text: TetraFET D5013UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W 50V 500MHz SINGLE ENDED C N typ B A ! D (2 pls) F (2 pls) H J FEATURES SIMPLIFIED AMPLIFIER DESIGN M E I K G SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D5013UK 500MHz
JMK105BJ105KV Abstract: h-bridge converter JMK212BJ226MG UMK105 poliswitch BD9639MWV Yuden SAW bd96 high side buck driver Text: Regulators ICs for Digital Cameras and Camcorders Switching Regulator ICs with Built-in FET 5V BD9639MWV No.11036ECT16 ●Description BD9639MWV is 6ch system switching regulator IC that has built-in FET and Error amp phase compensation for DSC/DVC. The built-in circuit which consist of 2ch Buck-Boost / 2ch Buck / 2ch Boost circuits realize the high efficiency.	Original	PDF	BD9639MWV 11036ECT16 BD9639MWV R1120A JMK105BJ105KV h-bridge converter JMK212BJ226MG UMK105 poliswitch Yuden SAW bd96 high side buck driver
NR4018T2R2N Abstract: No abstract text available Text: Regulators ICs for Digital Cameras and Camcorders Switching Regulator ICs with Built-in FET 5V BD9639MWV No.11036ECT16 ●Description BD9639MWV is 6ch system switching regulator IC that has built-in FET and Error amp phase compensation for DSC/DVC. The built-in circuit which consist of 2ch Buck-Boost / 2ch Buck / 2ch Boost circuits realize the high efficiency.	Original	PDF	BD9639MWV 11036ECT16 BD9639MWV R1120A NR4018T2R2N
J307 FET Abstract: AGR19180EF JESD22-A114 agere c8 Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19180EF Hz--1990 AGR19180EF DS04-080RFPP DS02-377RFPP) J307 FET JESD22-A114 agere c8
CLF7045-1R5N Abstract: No abstract text available Text: TPS54295 SLVSB01B – OCTOBER 2011 – REVISED DECEMBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • •	Original	PDF	TPS54295 SLVSB01B CLF7045-1R5N
J307 FET Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386 Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19180EF Hz--1990 AGR19180EF DS04-162RFPP DS04-080RFPP) J307 FET JESD22-A114 c38 transistor j526 j451 J386
Untitled Abstract: No abstract text available Text: TPS54295 SLVSB01B – OCTOBER 2011 – REVISED DECEMBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • •	Original	PDF	TPS54295 SLVSB01B
Untitled Abstract: No abstract text available Text: TPS54295 SLVSB01B – OCTOBER 2011 – REVISED DECEMBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • •	Original	PDF	TPS54295 SLVSB01B
A102 A106 A107 C103 C109 C114 Abstract: A114 esh IOR 5B1 mdb25 philips r360 2n3904, itt BAR54 foxconn 82443GX 2D6 SOT-23 Text: A B C D E Intel 100MHz Pentium R II processor/440GX AGPset Dual-Processor Customer Reference Schematics 4 Revision 1.0 4 PAGE TITLE COVER SHEET 1 BLOCK DIAGRAM 2 SLOT 1 CONNECTOR 3,4,5,6 CLK SYNTHESIZER 7 82443GX 8,9,10 FET SWITCHES 11,12 DIMM SOCKETS 13,14,15,16	Original	PDF	100MHz processor/440GX 82443GX FM5-62 440GX A102 A106 A107 C103 C109 C114 A114 esh IOR 5B1 mdb25 philips r360 2n3904, itt BAR54 foxconn 82443GX 2D6 SOT-23
Untitled Abstract: No abstract text available Text: TPS542951 www.ti.com SLVSBI4B – JULY 2012 – REVISED OCTOBER 2013 2A/3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS542951 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • •	Original	PDF	TPS542951
AGR19180EF Abstract: JESD22-A114 Z111A Text: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—	Original	PDF	AGR19180EF Hz--1990 AGR19180EF JESD22-A114 Z111A
Untitled Abstract: No abstract text available Text: TPS542951 www.ti.com SLVSBI4A – JULY 2012 – REVISED APRIL 2013 2A/3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS542951 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • •	Original	PDF	TPS542951

PS54395 Abstract: No abstract text available Text: TPS54395 www.ti.com SLVSBC8A – JUNE 2012 – REVISED MAY 2013 3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54395 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • • •	Original	PDF	TPS54395 PS54395
PS54395 Abstract: No abstract text available Text: TPS54395 www.ti.com SLVSBC8A – JUNE 2012 – REVISED MAY 2013 3A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54395 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • • •	Original	PDF	TPS54395 PS54395
Vo115 Abstract: No abstract text available Text: TPS54295 SLVSB01 – OCTOBER 2011 www.ti.com 2A Dual Channel Synchronous Step-Down Switcher with Integrated FET SWIFT Check for Samples: TPS54295 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • D-CAP2™ Control Mode	Original	PDF	TPS54295 SLVSB01 Vo115
Untitled Abstract: No abstract text available Text: TPS54495 www.ti.com SLVSBH0A – JUNE 2012 – REVISED MAY 2013 4A/2A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54495 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • •	Original	PDF	TPS54495
PS54495 Abstract: No abstract text available Text: TPS54495 www.ti.com SLVSBH0A – JUNE 2012 – REVISED MAY 2013 4A/2A Dual Channel Synchronous Step-Down Switcher with Integrated FET Check for Samples: TPS54495 FEATURES APPLICATIONS • • 1 2 • • • • • • • • • • • • • • •	Original	PDF	TPS54495 PS54495
2n3904, itt Abstract: 2222n philips r360 A102 A106 A107 C103 C109 C114 foxconn schematic diagram UPS 1060 fet dd51 J241 ND R315 Text: A 4 B 2 D E Intel 100 MHz Pentium tm II processor/440BX AGPset Dual Processor Customer Reference Schematics Revision 1.0 4 PAGE TITLE 3 C COVER SHEET 1 BLOCK DIAGRAM 2 SLOT 1 CONNECTOR 3,4,5,6 CLK SYNTHESIZER 7 82443BX 8,9,10 FET SWITCHES 11,12 DIMM SOCKETS	Original	PDF	82443BX 82443BX/DRAM FM5-62 440BX 2n3904, itt 2222n philips r360 A102 A106 A107 C103 C109 C114 foxconn schematic diagram UPS 1060 fet dd51 J241 ND R315
J307 FET Abstract: J307 transistor c35 equivalent IM335 Text: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19180E Hz--1990 AGR19180EU AGR19180EF Voltag48, DS02-377RFPP J307 FET J307 transistor c35 equivalent IM335
Untitled Abstract: No abstract text available Text: eÊ Stanford Microdevices Product Description SPF-2098 Stanford M icrodevices’ SPF-2098 is a high performance PHEMT gallium arsenide FET utilizing electron beam written 0.25 micron long by 200 micron wide Schottky barrier gates. 1-23 GHz, Low Noise PHEMT G a As FET	OCR Scan	PDF	SPF-2098 100mW SPF-2098
transistor C5080 Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965 Text: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295	OCR Scan	PDF	3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194 BB101M BB101C 3SK296 2SC2732 transistor C5080 transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
125C42 Abstract: No abstract text available Text: SEMICONDUCTOR CORPORATION Advance Product Information s d h / s o n e t 2.5Gbits/sec VSC7926 Laser Diode Driver Features • Rise Times Less Than lOOps Single Supply • High Speed Operation Up to 2.5Gb/s NRZ Data Direct Access to Modulation and Bias FET’s	OCR Scan	PDF	VSC7926 VSC7926 G52188-0, 125C42

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FET C42 Search Results

FET C42 Result Highlights (5)

FET C42 Price and Stock

Analog Devices Inc LTC4217HFE#PBF

Analog Devices Inc LTC4217IFE#PBF

Analog Devices Inc LTC4217CFE#PBF

Analog Devices Inc LTC4217IFE#TRPBF

Analog Devices Inc LTC4217CFE#TRPBF

FET C42 Datasheets Context Search

NEC uPA 63 H

Untitled

Untitled

JMK105BJ105KV

NR4018T2R2N

J307 FET

CLF7045-1R5N

J307 FET

Untitled

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A102 A106 A107 C103 C109 C114

Untitled

AGR19180EF

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PS54395

PS54395

Vo115

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PS54495

2n3904, itt

J307 FET

Untitled

transistor C5080

125C42