MGF1402B
Abstract: MGF1402
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET MITSUBISHI ELECTRIC
|
Original
|
MGF1402B
MGF1402B
MGF1402
|
PDF
|
MGF1303B
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1303B LOW NOISE GaAs FET MITSUBISHI ELECTRIC
|
Original
|
MGF1303B
MGF1303B
|
PDF
|
MGF1403B
Abstract: GaAs FET
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET MITSUBISHI ELECTRIC
|
Original
|
MGF1403B
MGF1403B
GaAs FET
|
PDF
|
MGF1302
Abstract: gaas fet "GaAs FET" Low Noise Gaas
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1302 LOW NOISE GaAs FET MITSUBISHI ELECTRIC
|
Original
|
MGF1302
MGF1302
gaas fet
"GaAs FET"
Low Noise Gaas
|
PDF
|
3SK165A
Abstract: 3SK165A-0 3SK165A-1 nf 820
Text: 3SK165A GaAs N-channel Dual Gate MES FET Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation
|
Original
|
3SK165A
3SK165A
800MHz
M-254
3SK165A-0
3SK165A-1
nf 820
|
PDF
|
6323 GA
Abstract: transistor NEC D 882 p D413 transistor D2396 transistor d507 D484 transistor D2388 transistor d528 transistor D773 d772 transistor
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES x 2.1 ±0.2 1.25 ±0.1 Low noise figure QUANTITY PART NUMBER PACKING STYLE
|
Original
|
NE34018
NE34018
NE34018-T1
NE34018-T2
6323 GA
transistor NEC D 882 p
D413 transistor
D2396
transistor d507
D484 transistor
D2388
transistor d528
transistor D773
d772 transistor
|
PDF
|
3SK165A
Abstract: 3SK165A-1 3SK165A-0
Text: 3SK165A GaAs N-channel Dual Gate MES FET Preliminary Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation
|
Original
|
3SK165A
3SK165A
800MHz
M-254
3SK165A-1
3SK165A-0
|
PDF
|
D450 Nchannel
Abstract: C10535E NE76118 NE76118-T1 NE76118-T2 NEC 3536
Text: DATA DATA SHEET SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS NE76118 is a n-channel GaAs MES FET housed in MOLD package. in millimeters FEATURES 2.1±0.2 1.25±0.1 • Low noise figure PACKING STYLE
|
Original
|
NE76118
NE76118
NE76118-T1
NE76118-T2
D450 Nchannel
C10535E
NE76118-T1
NE76118-T2
NEC 3536
|
PDF
|
MGF1908A
Abstract: No abstract text available
Text: June/2004 June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET MITSUBISHI ELECTRIC June/2004
|
Original
|
June/2004
MGF1908A
MGF1908A
|
PDF
|
2SA2160
Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series
|
Original
|
O-220FM
47P4869E
2SA2160
2SA2149
2SC6005
RQW200
rdx100n45
RQA200N03
rqw200n03
RLA130N03
rdx*100n45
2sc6027
|
PDF
|
MGF1907A
Abstract: MGF1907
Text: June/2004 June/2004 June/2004 June/2004 June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1907A TAPE CARRIER LOW NOISE GaAs FET MITSUBISHI ELECTRIC June/2004
|
Original
|
June/2004
MGF1907A
MGF1907A
MGF1907
|
PDF
|
amplifiers
Abstract: Low Noise Amplifiers Medium Power Amplifiers power amplifiers
Text: A m plifier s Contents PAGE Broadband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers Limiting Amplifiers # • ,«11». Narrowband GaAs FET Amplifiers Low Noise Amplifiers Medium Power Amplifiers . 139 Module GaAs FET Amplifiers
|
OCR Scan
|
|
PDF
|
mgf1908
Abstract: MGF1908A MGF1303B
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1908A TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1908A is a low noise GaAs FET with an N-channel Schottky gate,which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
|
OCR Scan
|
MGF1908A
MGF1908A
MGF1303B.
12GHz
mgf1908
MGF1303B
|
PDF
|
NEC 3536
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •
|
OCR Scan
|
NE76118
NE76118
NE76118-T1
NE76118-T2
NEC 3536
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: GaAs Devices • Hyper FET Hetero Structured InGaAs FET . 6 • Ultra-Low Noise Hyper F E T . 6 ■ RF Integrated • Wide-Band, Low-Noise A m plifiers. 6
|
OCR Scan
|
BG2011SM
|
PDF
|
MGF1903B
Abstract: MGF1303B 903b mgf1903
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F1903B TAPE CA RR IER LOW NOISE GaAs FET DESCRIPTION The M G F1903B is a low noise GaAs FET w ith an N-channel Schottky gate, which is designed fo r use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package
|
OCR Scan
|
MGF1903B
MGF1303B.
MGF1903B
12GHz
MGF1303B
903b
mgf1903
|
PDF
|
fet K 793
Abstract: MGF1402 cdb 838 S22VS MGF1402B Q017 91 569 775 -35 S 30ria
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> • b24tlfl2ti 0017040 b47 ■ MGF1402B LOW NOISE GaAs FET DESCRIPTION OU TLINE DRAWING The MGF1402B low-noise GaAs FET w ith an N-channel Schottky gate is designed fo r use in S to X band ampli fiers and oscillators. The hermetically sealed metalceramic
|
OCR Scan
|
b241fl2tÃ
MGF1402B
12GHz
MGF1402B
157MIN.
fet K 793
MGF1402
cdb 838
S22VS
Q017
91 569 775 -35 S
30ria
|
PDF
|
063 793
Abstract: transistor v63
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain
|
OCR Scan
|
NE34018
NE34018
WS60-00-1
IR30-00-3
063 793
transistor v63
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A " f C O ^ IflfUUf ^ J-FET INPUT LOW-NOISE OPERATIONAL AMPLIFIER The TA75071P is a J-FET input low-noise operational amplifier with low input bias and offset current, fast slew rate and wide bandwidth.
|
OCR Scan
|
TA75071P
TA7504P
200pA
18nV//Hz
Circu12
RL-10kn
CL-100pF
|
PDF
|
NEC K 2500
Abstract: OLS 049 1689I DS 4069 k 3531 transistor 6323 GA NEC 2905
Text: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES Low noise figure NF = 0.6 dB TYP. at f = 2 GHz High associated gain Ga = 16 dB TYP. at f = 2 GHz
|
OCR Scan
|
NE34018
NE34018
NE34018-T1
NE34018-T2
NEC K 2500
OLS 049
1689I
DS 4069
k 3531 transistor
6323 GA
NEC 2905
|
PDF
|
817 CN
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION N E76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • 2 . 1± 0.2 Low noise figure 1.25±0.1 NF = 0.8 dB TYP. at f = 2 GHz
|
OCR Scan
|
NE76118
E76118
NE76118-T1
NE76118-T2er
IR30-00-2
817 CN
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1903B TARE CARRIER LOW NOISE GaAs FET D E S C R IP T IO N The MGF1 9 0 3 B is a low noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to Ku band amplifiers. The hermetically sealed metal-ceramic package
|
OCR Scan
|
MGF1903B
MGF1903B
F1303B.
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1402B LOW NOISE GaAs FET DESCRIPTION The M G F 1 4 0 2B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to X band ampli fiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and has a
|
OCR Scan
|
MGF1402B
12GHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and
|
OCR Scan
|
MGF1902B
MGF1902B
MGF13Q2.
12GH2
30rnA
|
PDF
|
