fl6l5201
Abstract: No abstract text available
Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter
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FL6L5201
fl6l5201
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FET MARKING CODE
Abstract: FL6L5201
Text: FL6L5201 Tentative Total pages page FL6L5201 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For switching circuits Marking Symbol : Y1 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C Parameter
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FL6L5201
FET MARKING CODE
FL6L5201
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FL6L5203
Abstract: FET MARKING CODE
Text: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C
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FL6L5203
FL6L5203
FET MARKING CODE
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Untitled
Abstract: No abstract text available
Text: FL6L5203 Tentative Total pages page FL6L5203 Silicon P-channel MOS FET FET Silicon epitaxial planar type (SBD) For high speed switching circuits Marking Symbol : Y3 Package Code : WSSMini6-F1 Internal Connection 6 5 4 1 2 3 Absolute Maximum Ratings Ta = 25 °C
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FL6L5203
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-12746 Revision. 2 Product Standards MOS FET FL6L52010L FL6L52010L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features Marking Symbol : Y1 1.4
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TT4-EA-12746
FL6L52010L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13066 Revision. 2 Product Standards MOS FET FL6L52060L FL6L52060L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 Features Marking Symbol : Y2 1.4 1.6
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TT4-EA-13066
FL6L52060L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13148 Revision. 2 Product Standards MOS FET FL6L52030L FL6L52030L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features Marking Symbol Y3 1.4 1.6
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TT4-EA-13148
FL6L52030L
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13067 Revision. 2 Product Standards MOS FET FL6L52070L FL6L52070L Silicon P-channel MOSFET FET Silicon epitaxial planar type(SBD) Unit : mm 1.6 For switching For DC-DC Converter 0.2 0.13 6 5 4 1 2 3 • Features Marking Symbol Y4 1.4 1.6
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TT4-EA-13067
FL6L52070L
UL-94
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DSKTJ05
Abstract: transistor code book FET MARKING CODE
Text: DSKTJ05 Tentative Total pages page DSKTJ05 Silicon N-channel junction FET For AF impedance converter Marking Symbol : 9S, 9T Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)
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DSKTJ05
DSKTJ05
transistor code book
FET MARKING CODE
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transistor code book
Abstract: DSKTJ08
Text: DSKTJ08 Tentative Total pages page DSKTJ08 Silicon N-channel junction FET For AF impedance converter Marking Symbol : CT, CU Package Code : TSSSMini3-F2-B Absolute Maximum Ratings Ta = 25 °C Parameter Drain-source voltage Gate open Drain-gate voltage(Source open)
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DSKTJ08
transistor code book
DSKTJ08
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gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
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QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
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FET GAAS marking a
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC's 4-PIN ULTRA SMALL FLAT-LEAD PS7801C-1A SUPER LOW OUTPUT CAPACITANCE 1-ch OPTICAL COUPLED MOS FET FEATURES • ULTRA SMALL FLAT-LEAD PACKAGE: 4.2 L x 2.5 (W) × 1.85 (H) mm • SUPER LOW OUTPUT CAPACITANCE: Cout = 0.5 pF TYP.
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PS7801C-1A
PS7801C-1A-F3,
PS7801C-1A
FET GAAS marking a
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Low Capacitance MOS FET
Abstract: PS7801E-1A diode marking BDE on semiconductor 1E marking "FET" f3a FET
Text: Solid State Relay OCMOS FET PS7801E-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R, 1-ch Optical Coupled MOS FET DESCRIPTION The PS7801E-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side input side and MOS FETs on the output side.
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PS7801E-1A
PS7801E-1A
PS72xx
Low Capacitance MOS FET
diode marking BDE on semiconductor
1E marking "FET"
f3a FET
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TS5N214
Abstract: No abstract text available
Text: TS5N214 2-BIT 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS206 – AUGUST 2005 FEATURES • • • • • • • • DBQ OR PW PACKAGE TOP VIEW Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range
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TS5N214
SCDS206
000-V
A114-B,
TS5N214
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t08 fet
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L52070L FL6L52070L Silicon P-channel MOSFET(FET) Unit: mm Silicon epitaxial planar type(SBD) For Switching • Features Low Drain-source On-state Resistance:RDS(on) typ = 300 mΩ (VGS = -4.0 V)
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2002/95/EC)
FL6L52070L
UL-94
FL6L52070L
t08 fet
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HV9960
Abstract: No abstract text available
Text: Supertex inc. HV9860 Single Channel Boost LED Driver with LED Wiring Fault Detection Features General Description ►► Switch mode controller for boost and flyback converters ►► Discontinuous conduction mode of operation ►► High output current accuracy
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125OC)
100kHz
HV9860
HV9860
DSFP-HV9860
B060713
HV9960
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Untitled
Abstract: No abstract text available
Text: TS5N118 1-OF-8 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS205 – AUGUST 2005 FEATURES APPLICATIONS • • • • • • • • • • • • • Low and Flat ON-State Resistance ron Characteristics Over Operating Range
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TS5N118
SCDS205
000-V
A114-B,
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HV9960
Abstract: HV986 flyback led driver with pwm dimming
Text: Supertex inc. HV9860 Single Channel Boost LED Driver with LED Wiring Fault Detection Features ►► Switch mode controller for boost and flyback converters ►► Discontinuous conduction mode of operation ►► High output current accuracy ►► Internal ±2% voltage reference 0OC < TA < 125OC
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125OC)
100kHz
HV9860
HV9860
DSFP-HV9860
A100511
HV9960
HV986
flyback led driver with pwm dimming
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TS5N412
Abstract: No abstract text available
Text: TS5N412 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER HIGH-BANDWIDTH BUS SWITCH www.ti.com SCDS207 – AUGUST 2005 FEATURES APPLICATIONS • • • • • • • • • • • • • Low and Flat ON-State Resistance ron Characteristics Over Operating Range
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TS5N412
SCDS207
000-V
A114-B,
TS5N412
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NO2-B1
Abstract: No abstract text available
Text: Solid State Relay OCMOS FET PS7802B-1A 4-PIN ULTRA SMALL FLAT-LEAD, LOW C x R 6.3 pF • Ω 1-ch Optical Coupled MOS FET −NEPOC Series− DESCRIPTION The PS7802B-1A is a low output capacitance solid state relay containing a GaAs LED on the light emitting side
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PS7802B-1A
PS7802B-1A
PS72xx
NO2-B1
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bf544
Abstract: siemens fet to92 700M
Text: SIEMENS BF 544 Silicon N Channel MOS FET Triode Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • / dss= 4 mA, g ts = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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Q62702-F1231
eht07043
eht07044
EHM07002
fl23SbDS
0Qbb777
bf544
siemens fet to92
700M
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CFY10
Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
Text: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62703-F11
fl23SbOS
00b74cÃ
CFY10
fl235fci05
CFY10
siemens gaas fet
CFY 10
Ga FET marking k
CFY 18
cfy 14 siemens
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sst211 sot-143
Abstract: SST211 SST215 SST213 TZ marking sot143 fet
Text: TE L E D Y NE BÖE » COMPONENTS *7Tfa [s lt2 \5 Z m flW b ü S Q0üb4Sb 2 SST211, SST213 SST215 SEMICONDUCTOR N-CHANNEL ENHANCEMENT-MODE D-MOS FET SWITCHES ORDERING INFORMATION SOT-143 Pkfl. Package 24) Topside Device Marking Description F’reparation for shipment
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SST211,
SST213
SST215
OT-143
SST21Ã
SST213
10Vt70ft
SST211
SST215
sst211 sot-143
TZ marking
sot143 fet
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Untitled
Abstract: No abstract text available
Text: S IE M E N S Silicon N Channel MOS FET Triode BF 543 Preliminary Data • For RF stages up to 300 MHz preferably in FM applications • /dss = 4 mA, g is = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code
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PDF
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Q62702-F1372
OT-23
EHM07Ã
1B1L75
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