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    FET P CHANNEL Search Results

    FET P CHANNEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    FET P CHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTM86627

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky


    Original     		PDF 2002/95/EC) MTM86627 MTM86627

    FET2

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG654301 is N-P channel dual type small signal MOS FET employed small


    Original     		PDF 2002/95/EC) FG654301 FG654301 FET2

    XP134A11A1SR

    Abstract: No abstract text available
    Text: XP134A11A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A11A1SR is a P-Channel Power MOS FET with low on-state


    Original     		PDF XP134A11A1SR XP134A11A1SR

    XP134A01A9SR

    Abstract: No abstract text available
    Text: XP134A01A9SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.19Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A01A9SR is a P-Channel Power MOS FET with low on-state


    Original     		PDF XP134A01A9SR XP134A01A9SR

    FG694301

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG694301 is N-P channel dual type small signal MOS FET employed small


    Original     		PDF 2002/95/EC) FG694301 FG694301

    FET2

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FG654301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits • Overview  Package FG654301 is N-P channel dual type small signal MOS FET employed small


    Original     		PDF 2002/95/EC) FG654301 FG654301 FET2

    XP134A02A1SR

    Abstract: XP134A11A1SR XP134A1275SR XP135A1145SR
    Text: XP134A02A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A02A1SR is a P-Channel Power MOS FET with low on-state


    Original     		PDF XP134A02A1SR XP134A02A1SR Vds10V XP134A11A1SR XP134A1275SR XP135A1145SR

    Pch MOS FET

    Abstract: US6M2 TUMT6
    Text: US6M2 Transistors 2.5V Drive Nch+Pch MOS FET US6M2 zStructure Silicon N-channel MOS FET / Silicon P-channel MOS FET zExternal dimensions Unit : mm TUMT6 2.0 0.85Max. (2) (1) (3) 1pin mark 0.2 1.7 zFeatures 1) Nch MOS FET and Pch MOS FET are put in TUMT6 package.


    Original     		PDF 85Max. 15Max. Pch MOS FET US6M2 TUMT6

    QS6M4

    Abstract: TSMT6 Pch MOS FET m04 fet
    Text: QS6M4 Transistors 2.5V Drive Nch+Pch MOS FET QS6M4 zExternal dimensions Unit : mm zStructure Silicon P-channel MOS FET Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 zFeatures 1) The QS6M4 combines Pch MOS FET with a Nch MOS FET in a single TSMT6 package.


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5201 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview  Package FL6L5201 is P-channel single type small signal MOS FET with SBD


    Original     		PDF 2002/95/EC) FL6L5201 FL6L5201

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5207 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview  Package FL6L5207 is P-channel single type small signal MOS FET with SBD


    Original     		PDF 2002/95/EC) FL6L5207 FL6L5207 FL6L52070L

    fet marking y2

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5206 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview  Package FL6L5206 is P-channel single type small signal MOS FET with SBD


    Original     		PDF 2002/95/EC) FL6L5206 FL6L5206 FL6L52060L fet marking y2

    MTM76320

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76320 is the composite MOS FET (N-channel and P-channel MOS


    Original     		PDF 2002/95/EC) MTM76320 MTM76320

    sot89-3

    Abstract: No abstract text available
    Text: MOS FET P-CHANNEL POWER MOS FET FOR SWITCHING The S-90P series is a P-channel power MOS FET that realizes low on-resistance and ultra high-speed switching characteristics. It is suitable for speeding up switching, enabling a high efficient set and energy saving. A gate protection


    Original     		PDF S-90P OT-23-3 OT-89-3 OT-23-3, OT-89-3 S-90P0112SMA S-90P0222SUA S-90P0332SUA sot89-3

    mtm76325

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS


    Original     		PDF 2002/95/EC) MTM76325 MTM76325

    XP132A01A0SR

    Abstract: No abstract text available
    Text: XP132A01A0SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.105Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A01A0SR is a P-Channel Power MOS FET with low on-state


    Original     		PDF XP132A01A0SR XP132A01A0SR

    2SJ243

    Abstract: C10535E MEI-1202
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS in mm at 2.5 V. 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and 0.1 +0.1 –0.05


    Original     		PDF 2SJ243 2SJ243 C10535E MEI-1202

    FET2

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . FG6K4206 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview  Package FG6K4206 is the dual-type MOS FET (N-channel and P-channel) which is


    Original     		PDF 2002/95/EC) FG6K4206 FG6K4206 FET2

    8A SOT-89

    Abstract: XP162A02D5PR
    Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state


    Original     		PDF XP162A02D5PR OT-89 XP162A02D5PR OT-89 8A SOT-89

    XP162A02D5PR

    Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
    Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state


    Original     		PDF XP162A02D5PR OT-89 XP162A02D5PR OT-89 XP162A11C0PR XP162A12A6PR sot89 fet XP162A11

    XP132A0265SR

    Abstract: No abstract text available
    Text: XP132A0265SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.065Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package • Applications ■ General Description ■ Features The XP132A0265SR is a P-Channel Power MOS FET with low on-state


    Original     		PDF XP132A0265SR XP132A0265SR

    hitachi fet

    Abstract: Hitachi 2SJ fet array 2SJ series
    Text: Hitachi Power MOS FET DATA BOOK No. 1 P-Channel 2SJ Series Power MOS FET Array Power MOS FET Module SOP-8 (HAT Series) HITACHI ADE-408-002E


    OCR Scan     		PDF ADE-408-002E hitachi fet Hitachi 2SJ fet array 2SJ series

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTB2P50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTB2P50E TMOS E-FET™ High Energy Power FET D2 p a k for Surface Mount Motorola Preferred Device TM OS POWER FET 2.0 AMPERES 500 VOLTS P-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF MTB2P50E/D MTB2P50E

    4600 fet transistor

    Abstract: POWER MOSFET 4600 MOSFET 4600 4600 mosfet 369A-13 AN569 MTD20P06HDL Z25 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTD20P06HDL HDTM OS E-FET™ High D en sity P o w er FET DPAK fo r S u rface M ount Motorola Preferred Device P-Channel Enhancement-Mode Silicon TMOS POWER FET LOGIC LEVEL 15 AMPERES 60 VOLTS


    OCR Scan     		PDF il180 li120 MTD20P06HDL 0E-05 0E-04 0E-02 0E-01 4600 fet transistor POWER MOSFET 4600 MOSFET 4600 4600 mosfet 369A-13 AN569 Z25 transistor