Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
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MTM86727
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky
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MTM76720
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package
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MTM76720
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marking JE FET
Abstract: MTM86727
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package
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MTM86727
MTM86727
marking JE FET
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-14584 Revision. 2 Product Standards MOS FET MTM131230BBF MTM131230BBF Silicon P-channel MOSFET Unit : mm 2.9 For switching 0.4 0.16 3 • Features 1.5 2.8 Low drain-source ON resistance : RDS on typ. = 40 m ( VGS = -4.0 V ) Halogen-free / RoHS compliant
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MTM15624
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM15624 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits • Package Overview Code Mini5-G1 Pin Name 1: Cathode 2: Drain
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MTM15624
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Abstract: No abstract text available
Text: Doc No. TT4-EA-12100 Revision. 2 Product Standards MOS FET MTMC8E2A0LBF MTMC8E2A0LBF Gate Resistor installed Dual N-Channel MOS Typ Unit: mm 2.9 For lithium-ion secondary battery protection circuit 0.3 8 7 6 5 1 2 3 4 0.16 2.4 2.8 • Features Low drain-source On-state Resistance
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Mtm76320
Abstract: MTM7632
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Package Overview MTM76320 is the composite MOS FET (N-channel and P-channel MOS
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MTM76320
MTM76320
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mtm76325
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . MTM76325 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package MTM76325 is the composite MOS FET (N-channel and P-channel MOS
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MTM76325
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MTM86627
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package Overview MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky
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MTM86627
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MTM76320
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Package Overview MTM76320 is the composite MOS FET (N-channel and P-channel MOS
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MTM76320
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13636 Revision. 4 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16 Low Drain-source On-state Resistance : RDS on typ = 92 m (VGS = -4.0 V) Low drive voltage: 1.8 V drive
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Abstract: No abstract text available
Text: Doc No. TT4-EA-13115 Revision. 2 Product Standards MOS FET MTM232270LBF MTM232270LBF Silicon N-channel MOS FET Unit : mm For switching MTM13227 in SMini3 type package 2.0 0.3 • Features 0.15 3 1.25 2.1 Low drain-source On-state resistance : RDS on typ = 85 m (VGS = 4.0 V)
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13636 Revision. 3 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOS FET Unit : mm For switching 2.9 0.4 • Features 0.16 Low Drain-source On-state Resistance : RDS on typ = 92 m (VGS = -4.0 V) Low drive voltage: 1.8 V drive
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MTM7632
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM76320 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For DC-DC converter circuits For switching circuits • Overview Package MTM76320 is the composite MOS FET (N-channel and P-channel MOS
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MTM7632
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MTM68410
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM68410 Silicon P-channel MOS FET For load switch circuits For switching circuits • Overview Package MTM68410 is the low ON resistance dual P-channel MOS FET designed for
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Abstract: No abstract text available
Text: Doc No. TT4-EA-12099 Revision. 2 Product Standards MOS FET MTM684100LBF MTM684100LBF Dual P-channel MOSFET Unit: mm 2.9 For switching 0.3 8 7 6 5 1 2 3 4 2.4 2.8 • Features Low drain-source On-state Resistance RDS on typ. = 32 m (VGS =-4.0 V) Low drive voltage:1.8V drive
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MTM23110
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MTM761100L
Abstract: No abstract text available
Text: Doc No. TT4-EA-10443 Revision. 2 Product Standards MOS FET MTM761100LBF MTM761100LBF Silicon P-channel MOSFET Unit : mm For Switching 2.0 0.2 0.13 6 5 4 1 2 3 • Features 1.7 2.1 Low Drain-source On-state Resistance : RDS on typ. = 30 m (VGS = -4.0 V)
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Abstract: No abstract text available
Text: Doc No. TT4-EA-10241 Revision. 2 Product Standards MOS FET MTM982400BBF MTM982400BBF Silicon N-channel MOSFET Unit: mm 5.0 For switching 0.4 8 7 6 5 1 2 3 4 5.0 6.0 • Features Low drain-source On-state Resistance RDS on typ = 29 m (VGS = 5.0 V) Halogen-free / RoHS compliant
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Abstract: No abstract text available
Text: Doc No. TT4-EA-13593 Revision. 2 Product Standards MOS FET MTM684110LBF MTM684110LBF Dual P-channel MOSFET Unit: mm 2.9 For switching 0.3 8 7 6 5 1 2 3 4 2.4 2.8 • Features Low drain-source On-state Resistance RDS on typ. = 23 m (VGS =-5.0 V) Low drive voltage:1.8V drive
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MTM76111
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MTM131270BBF
Abstract: No abstract text available
Text: Doc No. TT4-EA-13636 Revision. 2 Product Standards MOS FET MTM131270BBF MTM131270BBF Silicon P-channel MOSFET Unit: mm For Switching 2.9 0.4 0.16 3 Low Drain-source On-state Resistance : RDS on typ = 92 m (VGS = -4 V) Low Drive Voltage : 1.8 V Drive
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mtm861270
Abstract: MTM86127 mtm13127
Text: Doc No. TT4-EA-10304 Revision. 2 Product Standards MOS FET MTM861270LBF MTM861270LBF Silicon P-channel MOSFET Unit : mm For Switching 1.6 0.2 MTM13127 in WSSMini6 type package 0.13 6 5 4 1 2 3 • Features Marking Symbol : MK 1.4 1.6 Low Drain-source On-state Resistance : RDS on typ = 80 m (VGS = -4 V)
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MTM68411
Abstract: 6 PIN case mos fet p-channel
Text: This product complies with the RoHS Directive EU 2002/95/EC . Silicon MOS FETs (Small Signal) MTM68411 Silicon P-channel MOS FET For load switch circuits For switching circuits • Overview Package MTM68411 is the low ON resistance dual P-channel MOS FET designed for
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