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    FET TRANSISTOR FT Search Results

    FET TRANSISTOR FT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    FET TRANSISTOR FT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SK3266

    Abstract: 2SC4639 FC22
    Text: FC22 TR:NPN Epitaxial Planar Silicon Transistor FET:N-Channel Junction Silicon FET High-Frequency Amp, AM Applications TENTATIVE Features • Composite type with an J-FET transistor and a PNP transistor contained in the conventional CP package, improving the


    Original     		PDF 2SC4639 2SK3266, 10IB1 --20V 990128TM2fXHD 2SK3266 FC22

    VEC2901

    Abstract: No abstract text available
    Text: VEC2901 Ordering number : ENN8198 VEC2901 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon MOSFET Switching, Flash Applications Features • • Composite type with an NPN transistor and N-ch MOS-FET contained in one package facilitating high-density mounting.


    Original     		PDF VEC2901 ENN8198 VEC2901

    ENN8366

    Abstract: CPH5903 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET
    Text: CPH5903 Ordering number : ENN8366 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Junction Silicon FET CPH5903 High-Frequency Amplifier. AM Amplifier Applications Features • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		PDF CPH5903 ENN8366 CPH5903 2SK1740-equivalent 2SC2812-equivalent ENN8366 ITR01960 ITR01961 ITR01963 ITR01964 ITR01965 ITR01966 J 350 FET

    marking 1a

    Abstract: CPH5901 2SC4639 2SK932 82786
    Text: CPH5901 Ordering number : ENN8278A TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		PDF CPH5901 ENN8278A CPH5901 2SK932 2SC4639, marking 1a 2SC4639 82786

    Untitled

    Abstract: No abstract text available
    Text: CPH5901 Ordering number : ENN8278 TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		PDF ENN8278 CPH5901 CPH5901 2SK932 2SC4639,

    TA3705

    Abstract: No abstract text available
    Text: CPH5901 Ordering number : ENN8278A CPH5901 Features • • • TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		PDF ENN8278A CPH5901 CPH5901 2SK932 2SC4639, TA3705

    UPA509TA

    Abstract: uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509
    Text: DATA SHEET µ PA509TA NPN EPITAXIAL SILICON TRANSISTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR HIGH FREQUENCY AMPLIFIER, AM HIGH FREQUENCY AUDIO FREQUENCY AMPLIFIER APPLICATION FEATURES PACKAGE DRAWING Unit: mm • Composite type J-FET and NPN Transistor


    Original     		PDF PA509TA SC-74A UPA509TA uPA50 MARKING UV N-Channel Silicon Junction Field Effect Transistor uPA509

    Untitled

    Abstract: No abstract text available
    Text: CPH5902 Ordering number : EN6962C SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5902 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		PDF CPH5902 EN6962C CPH5902 2SK2394-equivalent 2SC4639-equivalent

    Untitled

    Abstract: No abstract text available
    Text: CPH5901 Ordering number : EN8278B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5901 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		PDF CPH5901 EN8278B CPH5901 2SK932 2SC4639,

    Untitled

    Abstract: No abstract text available
    Text: CPH5905 Ordering number : EN7177B SANYO Semiconductors DATA SHEET TR : NPN Epitaxial Planar Silicon Transistor FET : N-Channel Silicon Junction FET CPH5905 High-Frequency Amplifier. AM Amplifier. Low-Frequency Amplifier Applications Features • • • Composite type with J-FET and NPN transistors contained in the CPH5 package, improving the mounting


    Original     		PDF CPH5905 EN7177B CPH5905 2SK3357-equivalent 2SC4639-equivalent

    T2406

    Abstract: t2406 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor M M FT2406T1 Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET M SOT-223 for Surface Mount M ED IU M POW ER TM O S FET 700 mA 240 VOLTS T his TM O S m edium pow er field effect transistor is designed for


    OCR Scan     		PDF OT-223 T2406 t2406 MOTOROLA

    t2406 MOTOROLA

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TM OS FET 700 mA 240 VOLTS This TM OS medium power field effect transistor is designed for


    OCR Scan     		PDF MMFT2406T1 OT-223 b3b755S t2406 MOTOROLA

    2SK458

    Abstract: 2SK45
    Text: tr m & m m M O S « # * * * ''* ? - h 9 M O S Field Effect Pow er Transistor 2SK458 N f t ^ ' 0r7 - M O S FET X 'f dUfls X i f f l N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK458ii, FET PACKAGE DIMENSIONS Unit : mm T*, iS S & D C


    OCR Scan     		PDF 2SK458 2SK458Ã 2SK458 2SK45

    transistor k 4212 fet

    Abstract: S211S NE23383B
    Text: PRELIMINARY DATA SHEET_ \ | F f ~ / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE23383B L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE23383B is a Hereto Junction FET that utilizes the {Unit : mm


    OCR Scan     		PDF NE23383B NE23383B transistor k 4212 fet S211S

    transistor te 2305

    Abstract: SOT223 Package
    Text: MOTOROLA Order this document by MTB40N1OE/D SEMICONDUCTOR TECHNICAL DATA Advance Data Sheet MTB40N10E TMOS E-FET Pow er Field E ffect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 40 AMPERES 100 VOLTS RDS on = 0-04 OHM This advanced TMOS E-FET is designed to withstand high


    OCR Scan     		PDF MTB40N1OE/D transistor te 2305 SOT223 Package

    NE334501

    Abstract: transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor NE334S01 low noise FET NEC U
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.


    OCR Scan     		PDF NE334S01 NE334S01 NE334501 transistor k 2761 NEC D 822 P NEC Ga FET marking C nec gaas fet marking NEC Ga FET marking A ap 2761 l transistor low noise FET NEC U

    t2406 MOTOROLA

    Abstract: No abstract text available
    Text: f MOTOROLA Order this document by MMFT2406T1/D SEMICONDUCTOR TECHNICAL DATA MMFT2406T1 Medium Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount MEDIUM POWER TMOS FET 700 mA


    OCR Scan     		PDF MMFT2406T1/D OT-223 MMFT2406T1 t2406 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK78150-55 OT223

    10VR

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technolgy


    OCR Scan     		PDF BUK7880-55 OT223 10VR

    a1034

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR ¿¿PA1552B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The /¿PA1552B is N-channel Power MOS FET Array that built in 4 circuits designed, for solenoid, motor and


    OCR Scan     		PDF uPA1552B PA1552B PA1552BH a1034

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effeet power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK9624-55 OT404

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level tield-ettect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology


    OCR Scan     		PDF BUK9675-55

    mosfet L 3055 motorola

    Abstract: FT3055E sot-223 body marking D K Q F
    Text: O rder this data sheet by M M FT3055ET1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount MMFT3055ET1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed


    OCR Scan     		PDF FT3055ET1/D OT-223 2PHX31317F-0 MMFT3055ET1/D mosfet L 3055 motorola FT3055E sot-223 body marking D K Q F

    2SJ202

    Abstract: 2SK1580 T100 T200
    Text: MOS FIELD EFFECT TRANSISTOR 2SJ202 P-CHANNEL MOS FET FOR SWITCHING The 2SJ202 is an P-channel vertical type MOS FET w hich can be OUTLINE DIMENSIONS Unit : mm driven by 2.5 V power supply. 2.1 ± 0.1 As the MOS FET is driven by low voltage and does n o t require con­


    OCR Scan     		PDF 2SJ202 2SK1580 T100 T200