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    FGW50N60H Search Results

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    FGW50N60H Price and Stock

    Fuji Electric Co Ltd FGW50N60HD

    Igbt, Single, 600V, 95A, To-247-3; Continuous Collector Current:95A; Collector Emitter Saturation Voltage:1.5V; Power Dissipation:360W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Fuji Electric FGW50N60HD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark FGW50N60HD Bulk 1
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    Fuji Electric Semiconductors FGW50N60HD

    IGBT DIS.DIODE SINGLE 50A 600V V SERIES TO247-3
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    Ozdisan Elektronik FGW50N60HD 6
    • 1 $3.69468
    • 10 $3.69468
    • 100 $3.3588
    • 1000 $3.3588
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    Fuji Electric Semiconductors FGW50N60HC

    IGBT DIS.DIODE SINGLE 50A 600V V SERIES TO247-3
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    Ozdisan Elektronik FGW50N60HC 4
    • 1 $4.3384
    • 10 $4.3384
    • 100 $3.944
    • 1000 $3.944
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    FUJITSU Semiconductor Limited FGW50N60HD

    Discrete IGBT (High-Speed V series) 600V / 50A
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    Win Source Electronics FGW50N60HD 19,000
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    • 100 $2.463
    • 1000 $2.135
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    FGW50N60H Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FGW50N60H

    Abstract: FDRW25S60L FGW50N60 fgw50
    Text: / FGW50N60H Discrete IGBT Discrete IGBT High-Speed V series 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply


    Original     		FGW50N60H FGW50N60H FDRW25S60L FGW50N60 fgw50 PDF

    FGW50N60HD

    Abstract: No abstract text available
    Text: / FGW50N60HD Discrete IGBT Discrete IGBT High-Speed V series 600V / 50A Features Low power loss Low switching surge and noise High reliability, high ruggedness (RBSOA, SCSOA etc.) Applications Uninterruptible power supply


    Original     		FGW50N60HD FGW50N60HD PDF

    fmh*23N50E

    Abstract: FMH23N50E N-channel MOSFET to-247 fmv23n50e ic 2535 fmh23n50 FGW40N120HD FMV20N60S1 FMW30N60S1HF FMW20N60S1HF
    Text: 1959-2012:QuarkCatalogTempNew 9/11/12 9:05 AM Page 1959 25 Diodes, IGBTs and MOSFETs Features: ᭤ Low VF ᭤ Super High Speed Switching ᭤ High Reliability By Planer Design ø2.5 Application: ᭤ High Speed Switching ᭤ Ultra Small Package, Possible for


    Original     		ERA82-004 SC802-04 ERA81-004 ERB81-004 ERC81-004 SC802-06 ERA83-006 ERA85-009 ERA92-02 SC9202-2 fmh*23N50E FMH23N50E N-channel MOSFET to-247 fmv23n50e ic 2535 fmh23n50 FGW40N120HD FMV20N60S1 FMW30N60S1HF FMW20N60S1HF PDF