FHFJ201 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
FHFJ201 Abstract: marking IGF Power MOSFET N-Channel sot-23 Text: 广东肇庆风华新谷微电子有限公司广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 N-Channel General Purpose Amplifier FHFJ201 MOSFET Transistors 场效应管 MAXIMUM RATINGS(Ta=25℃) 最大额定值	Original	PDF	FHFJ201) FHFJ201 VDS20V OT-23 marking IGF Power MOSFET N-Channel sot-23
marking IGF Abstract: FET electret microphone Text: உቯ‫ޝ‬቉።਌! N-channel Junction FET FHFJ201 N-channel Junction FET உቯ‫ޝ‬቉።਌ DESCRIPTION & FEATURES গၤૺᄂ࢛ Excellent voltage characteristics. ᓳᏗ࢟ኹᄂቶ! Excellent transient characteristics. ᓳᏗၾମᄂቶ Especially suited for use in electret condenser microphone.	Original	PDF	OT-23 FHFJ201 OT-23 062in, 024in, FHFJ201 VDS20V marking IGF FET electret microphone
FHK301N Abstract: marking IGF FHK84P Zero-Gate Voltage Drain Current FHK131 FHK138 SOT 23 MOSFET FHK170 VGS 20v FHK139 Text: SOT-23 MOS 场效应三极管（SOT-23 MOSFET TRANSISTORS）型号 TYPE FHK84P FHK119 FHK123 FHK131 FHK138 FHK139 FHK145 FHK149 FHK169 FHK170 FHK284P FHK301N FHK302P FHK303N FHK304P FHK336P FHK337N FHK338P FHK340P FHK357N FHK358P FHK359AN FHK360P FHK7002	Original	PDF	OT-23 FHK84P FHK119 FHK123 FHK131 FHK138 FHK139 FHK145 FHK149 FHK301N marking IGF FHK84P Zero-Gate Voltage Drain Current FHK131 FHK138 SOT 23 MOSFET FHK170 VGS 20v FHK139
FET electret microphone Abstract: No abstract text available Text: 結型場效應管 N-channel Junction FET FHFJ202 N-channel Junction FET 结型场效应管 DESCRIPTION & FEATURES 概述及特點 Excellent voltage characteristics. 卓越電壓特性 Excellent transient characteristics. 卓越瞬間特性 Especially suited for use in electret condenser microphone.	Original	PDF	OT-23 FHFJ202 OT-23 062in, 024in, FHFJ201 VDS20V FET electret microphone