FJ 2220 Search Results

FJ 2220 Result Highlights (5)

Part	Manufacturer	Description
HAT2220R-EL-E	Renesas Electronics Corporation	Nch Dual Power Mosfet 450V 0.7A 6500Mohm Sop8
5962-9222203M2A	Renesas Electronics Corporation	Fast CMOS Octal D Register
5962-9222201M2A	Renesas Electronics Corporation	Fast CMOS Octal D Register
5962-9222203MRA	Renesas Electronics Corporation	Fast CMOS Octal D Register
7MP6222-000	Renesas Electronics Corporation	SRAM MODULE

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Wima MKP1J022203F00JF00 Film Capacitors MKP 10 0.022 uF 630 VDC 5x11x13 PCM 10
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Mouser Electronics	MKP1J022203F00JF00					1 - 10 - 100 - 1000 - 10000 $0.281	Get Quote
Wima MKP1J022203F00JI00 Film Capacitors .022uF 630 Volts 5%
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Mouser Electronics	MKP1J022203F00JI00					1 - 10 - 100 - 1000 $0.281 10000 $0.253	Get Quote
Wima FKS3F022203F00JF00 Film Capacitors FKS 3 0.022 uF 250 VDC 5x11x13 PCM 10
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Mouser Electronics	FKS3F022203F00JF00					1 - 10 - 100 - 1000 - 10000 $0.447	Get Quote
Wima FKS3F022203F00JI00 Film Capacitors FKS 3 0.022 uF 250 VDC 5x11x13 PCM 10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	FKS3F022203F00JI00					1 - 10 - 100 - 1000 - 10000 $0.447	Get Quote
Wima FKS3F022203F00JD00 Film Capacitors FKS 3 0.022 uF 250 VDC 5x11x13 PCM 10
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Mouser Electronics	FKS3F022203F00JD00					1 - 10 - 100 - 1000 - 10000 $0.447	Get Quote

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FJ 2220 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-7v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-7v0-E MB85R256F MB85R256F	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-6v0-E MB85R256F MB85R256F	PDF
MB85R256FPF Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-2v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-2v0-E MB85R256F MB85R256F MB85R256FPF	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-6v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-6v0-E MB85R256F MB85R256F	PDF
MB85R256FPF Abstract: 8A10 MB85R256F Marking code M19 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-3v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00011-3v0-E MB85R256F MB85R256F MB85R256FPF 8A10 Marking code M19	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-6v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00008-6v0-E MB85RS128A MB85RS128A	PDF
2225 X7R 335 Abstract: m270000 Text: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and	Original	EIA481-1. IEC60286-6 2225 X7R 335 m270000	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-6v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00007-6v0-E MB85RS256A MB85RS256A	PDF
MB85RS64 Abstract: MB85RS64PNF-G-JNE1 RS64 E1115 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-3v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS501-00012-3v0-E MB85RS64 MB85RS64 MB85RS64PNF-G-JNE1 RS64 E1115	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-4v0-E Memory FRAM 64 K 8 K  8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS501-00012-4v0-E MB85RS64 MB85RS64	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-3v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS501-00001-3v0-E MB85RC16 MB85RC16	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-9v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS501-00001-9v0-E MB85RC16 MB85RC16	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00014-2v0-E Memory FRAM 16 K 2 K x 8 Bit SPI MB85RS16 • DESCRIPTION MB85RS16 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS501-00014-2v0-E MB85RS16 MB85RS16	PDF
RS256A Abstract: MB85RS256APNF-G-JNERE1 Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00007-3v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256A • DESCRIPTION MB85RS256A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00007-3v0-E MB85RS256A MB85RS256A RS256A MB85RS256APNF-G-JNERE1	PDF

Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00012-4v0-E Memory FRAM 64 K 8 K  8 Bit SPI MB85RS64 • DESCRIPTION MB85RS64 is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words  8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS501-00012-4v0-E MB85RS64 MB85RS64	PDF
Untitled Abstract: No abstract text available Text: CERAMIC CHIP CAPACITORS FEATURES • C0G NP0 , X7R, X5R, Z5U and Y5V Dielectrics • 10, 16, 25, 50, 100 and 200 Volts • Standard End Metalization: Tin-plate over nickel barrier • Available Capacitance Tolerances: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1%; ±2%; ±5%; ±10%; ±20%; and	Original	EIA481-1. IEC60286-6	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05–13110–7E Memory FRAM 128 K 16 K x 8 Bit I2C MB85RC128 • DESCRIPTION The MB85RC128 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	MB85RC128 MB85RC128	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00020-3v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128B • DESCRIPTION MB85RS128B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00020-3v0-E MB85RS128B MB85RS128B	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00021-3v0-E Memory FRAM 256 K 32 K x 8 Bit SPI MB85RS256B • DESCRIPTION MB85RS256B is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00021-3v0-E MB85RS256B MB85RS256B	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00008-3v0-E Memory FRAM 128K 16 K x 8 Bit SPI MB85RS128A • DESCRIPTION MB85RS128A is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 16,384 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00008-3v0-E MB85RS128A MB85RS128A	PDF
MB85RC64A Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00019-1v0-E Memory FRAM 64 K 8 K x 8 Bit I2C MB85RC64A • DESCRIPTION The MB85RC64A is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the	Original	DS501-00019-1v0-E MB85RC64A MB85RC64A	PDF
Untitled Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00001-5v0-E Memory FRAM 16 K 2 K x 8 Bit I2C MB85RC16 • DESCRIPTION The MB85RC16 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 2,048 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS501-00001-5v0-E MB85RC16 MB85RC16	PDF
RS64V Abstract: No abstract text available Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00015-2v0-E Memory FRAM 64 K 8 K x 8 Bit SPI MB85RS64V • DESCRIPTION MB85RS64V is a FRAM (Ferroelectric Random Access Memory) chip in a configuration of 8,192 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile	Original	DS501-00015-2v0-E MB85RS64V MB85RS64V RS64V	PDF
28T0157 Abstract: Chip Ferrite Beads For GHz Range Noise Suppressor CM501 b0735 HI1206T161 HR2220V801 HI1206N101 A-0393 transformer eaton el 198 CM3032V301 Text: 1 ' TECHNICALREFERENCELIBRARY D0N0TREM0VE . rf Ir- i1 L.1 • § « s r— j k\ ISrjï I!k\J1rB1i 1u'9t Mi, * ?<rmk m y & .~ r 'j. 1 fj -f —J _ / ^ “ l* -yM Ferrite Solutions for Printed C ircuit Boards Cables and Connectors Ninth Edition ISO 9001 and QS 9000 Certified	OCR Scan		PDF

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FJ 2220 Search Results

FJ 2220 Result Highlights (5)

FJ 2220 Price and Stock

Wima MKP1J022203F00JF00

Wima MKP1J022203F00JI00

Wima FKS3F022203F00JF00

Wima FKS3F022203F00JI00

Wima FKS3F022203F00JD00

FJ 2220 Datasheets Context Search

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MB85R256FPF

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MB85R256FPF

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2225 X7R 335

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MB85RS64

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RS256A

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MB85RC64A

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RS64V

28T0157