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    Text: Doc No. TT4-EA-14765 Revision. 1 Product Standards MOS FET FJ3P01130L FJ3P01130L Unit: mm • Package dimension Silicon P-channel MOSFET 2.0  Application 0.2 3  Battery FET  Load switch 2.0 0.25  Features Low drain-source ON resistance:RDS(on)max. = 10.0mΩ (VGS = -3.5 V)


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    TT4-EA-14765 FJ3P01130L PDF