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    FLASH 48PIN DQS Search Results

    FLASH 48PIN DQS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F010-20/B Rochester Electronics LLC Flash Visit Rochester Electronics LLC Buy
    MD28F020-90 Rochester Electronics LLC Flash, 256KX8, 90ns, CDIP32, CERDIP-32 Visit Rochester Electronics LLC Buy
    AM188EM-25KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-40KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy
    AM188EM-33KC\\W Rochester Electronics AM188EM - Microcontroller, 16-Bit, FLASH Visit Rochester Electronics Buy

    FLASH 48PIN DQS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


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    L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP PDF

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


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    L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi PDF

    NS 2N3

    Abstract: No abstract text available
    Text: Preliminary W29S201 128K x 16 CMOS FLASH MEMORY WITH SYNCHRONOUS BURST READ GENERAL DESCRIPTION The W29S201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The W29S201 supports both assynchronous & high performance synchronous burst read modes. The device


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    W29S201 12-volt NS 2N3 PDF

    W49S201

    Abstract: No abstract text available
    Text: Preliminary W49S201 128K x 16 CMOS FLASH MEMORY WITH SYNCHRONOUS BURST READ GENERAL DESCRIPTION The W49S201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The W49S201 supports both asynchronous & high performance synchronous burst read modes. The


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    W49S201 W49S201 12-volt PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary W29F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is


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    W29F201 W29F201 12-volt PDF

    W49F201

    Abstract: No abstract text available
    Text: Preliminary W49F201 128K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49F201 is a 2-megabit, 5-volt only CMOS flash memory organized as 128K × 16 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is


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    W49F201 W49F201 12-volt PDF

    flash 48pin dqs

    Abstract: No abstract text available
    Text: M ICRON I QUANTUM Devices, HC. ADVANCE 1 MEG x 16 A D V A N C E D B O O T BL O C K FLASH M E M O R Y MT28F160A3 FLASH MEMORY Sm art 3 FEATURES * * * * * * * * * * PIN A S S I G N M E N T Top View Thirty-nine erase blocks: Two 4K-word boot blocks (protected)


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    MT28F160A3 32K-word 110ns, 150ns 48-Pin flash 48pin dqs PDF

    Untitled

    Abstract: No abstract text available
    Text: I FUJITSU SEMICONDUCTOR , ^ ^ . ^ . ^ ^ « ^ , - ^ - ' ^ - ^ « . ^ - ^ DATA SHEET rm nCftK o n u o i P S 0 5 - 2 0 8 2 1 - ,._ FLASH MEMORY CMOS 8 M 1 M x 8 B I T MBM29F080-12-X DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements


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    MBM29F080-12-X 48-pin 44-pin PDF

    MBM29LV200B

    Abstract: No abstract text available
    Text: FLASH MEMORY B l I l i 2M 256K x 8/128K x 16 BIT M B M 2 9 L V 2 0 0 T - 12- x / M B M 2 9 L V 2 0 0 B - 12- x


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    8/128K 48-pin 44-pin MBM29LV200B PDF

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS • FEATURES • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standards Pinout and software compatible with single-power supply Flash


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    48-pin 40-pin 44-pin F9703 PDF

    M29F800A3BT12

    Abstract: M29F800A3BR10 M29F800A3BR80
    Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 8M CMOS Flash Memory The M29F800A3 is a 3.3 V high speed 8,388,608-bit CMOS Boot Block Flash Memory suitable for use in systems such as mobile, personal computing, and communication products.


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    M29F800A3/D M29F800A3 608-bit 48-pin M29F800A3C RMFAX09email M29F800A3BT12 M29F800A3BR10 M29F800A3BR80 PDF

    Untitled

    Abstract: No abstract text available
    Text: m iiB m m m am m . lliilllllllllllllllllllllllllllllllllllll M B M 2 9 F 0 1 6 -12-x • FEATURES • • • • • • • • • • • • • • • • Single 5.0 V read, program, and erase Minimizes system level power requirements Compatible with JEDEC-standard commands


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    -12-x 48-pin F9703 PDF

    sa29 pinout

    Abstract: 29LV160T TOP SIDE MARKING m03 29LV160
    Text: FLASH MEMORY CM OS 8 / 1 X* 1 2 -m M X 1 6 B M 29 B I T ‘9 0 -X /-1 2 -X • FEATURES • Single 3.0 V read, program and erase Minimizes system level power requirements • Compatible with JED EC-standard commands Uses same software commands as E2PROMs


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    48-pin 46-pin 48-ball D-63303 F97010 sa29 pinout 29LV160T TOP SIDE MARKING m03 29LV160 PDF

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY B l I l i i 8 M 1 M x 8/512 K x 16 BIT MBM29 F800 T-90-X-12-X/MBM29 F 800 B-90-X-12-x • FEATURES


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    MBM29 T-90-X-12-X/MBM29 B-90-X-12-x 44-pin 48-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY CMOS 8 M 1 M x 8 BIT MBM29F080-12-X • FEATURES • • • • • • • • • • • • • • Single 5.0 V read, write, and erase Minimizes system level power requirements Compatible with JEDEC-standards Pinout and software compatible with single-power supply Flash


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    MBM29F080-12-X 48-pin 40-pin 44-pin F40008S-1C-1 44-LE F44023S-2C-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: M B M29 LV8 OOT-12-x/M B M29 LV800B -12 x FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as E2PROMs • Compatible with JEDEC-standard world-wide pinouts


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    OOT-12-x/M LV800B 48-pin 44-pin 46-pin F9704 PDF

    46-PIN 29lv

    Abstract: fujtsu
    Text: FLASH MEMORY ¡BIMBIllMIBjiBIB IB IlijB lliiB illjB IB IIS lMllliillB H I 8M 1M x 8/512K x 16 BIT MBM29LV800TA-9o-)ü-i 2.x/MBM29LV800BA-»o-xm2.x • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


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    8/512K MBM29LV800TA-9o x/MBM29LV800BA- 48-pin 44-pin 46-pin 48-ball 46-PIN 29lv fujtsu PDF

    Untitled

    Abstract: No abstract text available
    Text: Order this document by M29S160/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information 16M CMOS Flash Memory Organization: 1,048,576 words x 16 bits 2,097,152 words x 8 bits Power Supply Voltage: V c c = 2.7 V - 3.6 V 2.5 V - 3.6 V READ Access Time:


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    M29S160/D M29S160xB-80 M29S160xB-10 M29S160xB-12 Word/16 Word/32 Word/64 -TOUCHTONE1-602-244-6609 M29S160/I PDF

    Untitled

    Abstract: No abstract text available
    Text: FLASH MEMORY B l I l i 2 M 256 K x 8/128 K x 16 BIT M B M 2 9 F 2 0 0 T A - 90- X - 12- x / M B M 2 9 F 2 0 0 B A - 90- x - 12- x


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    44-pin 48-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: IS28F400BV/BLV 262,144 x 16/524,288 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY ADVANCE INFORMATION NOVEMBER 1996 • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation • High-Performance Plead Maximum Access Times — 5V: 60/80/120 ns


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    IS28F400BV/BLV x8/x16 IS28F400BVB-80TI IS28F400BVT-80TI 48-pin 44-pin PDF

    M29F800A3BT12

    Abstract: m29f800a3br 29F800A
    Text: Order this document by M29F800A3/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M29F800A3 M29F800A2 8M CMOS Flash Memory Organization: 524,288 words x 16 bits 1,048,576 words x 8 bits Power Supply Voltage: V q c = 3.3 V ± 0.3 V Access Time: M29F800A3—80 = 80 ns Max


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    M29F800A3/D M29F800A3-- M29F80QA M29F800A3-12 M29F800A3 M29F800A2 48-Pin M29F800A3U M29F800A3B M29F800A3BT12 m29f800a3br 29F800A PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs p r e l im in a r y n o t a fin a i s ^ J ^ M5M29FB/T160A VP,RV-80,-10,-81 nc h a n g e . 16,777,216-BIT 2,097,152-WORD BY 8-BIT / 1 ,048,576-WORD BY16-BIT S o m e p a r a m e t r i c lim itó a r e CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY


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    M5M29FB/T160A RV-80 216-BIT 152-WORD 576-WORD BY16-BIT) 29FB/T160AVP 216-bit Mar/98 PDF

    MBM29F800

    Abstract: No abstract text available
    Text: MBM29F800T-90-X/-12-X/MBM29F800B-90-X/-12-X FEATURES • Single 5.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands


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    M29F800T-90-X/-12-X/MBM29F800B-90-X/-12-X 44-pin 48-pin F9703 MBM29F800 PDF

    Untitled

    Abstract: No abstract text available
    Text: M B M29 LV400T-12-x/M B M29 LV400B-12-x FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard com m ands Uses same software commands as E2PROMs • Compatible with JEDEC-standard w orld-w ide pinouts


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    LV400T-12-x/M LV400B-12-x 48-pin 44-pin 46-pin F9704 PDF