FLR016XV Search Results

FLR016XV Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FLR016XV		Unknown	FET Data Book		Scan	PDF

FLR016XV Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Flr016xp Abstract: FLR016XV GaAs FET HEMT Chips Text: FLR016XP, FLR016XV GaAs FET and HEMT Chips FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.)(FLR016XP) NOT Drain G1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: hadd = 25%(Typ.)(FLR016XP) REC OM Source hadd = 26%(Typ.)(FLR016XV)	Original	FLR016XP, FLR016XV FLR016XP) FLR016XV) FLR016XV Flr016xp GaAs FET HEMT Chips	PDF
Untitled Abstract: No abstract text available Text: FLR016XP, FLR016XV m ïm :il GaAs F E T and H E M T Chips fU J Ilb U FEATURES • High Output Power: P-\|<jB = 20.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.)(FLR016XP) G 1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: = 25%(Typ.)(FLR016XP) il add = 26%(Typ.)(FLR016XV)	OCR Scan	FLR016XP, FLR016XV FLR016XP) FLR016XV) FLR016XV	PDF
et 1103 Abstract: Flr016xp Text: FLR016XP, F LR 016X V GaAs F ET a n d H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25°C Item Symbol Saturated Drain Current Test Conditions ID SS - 60 90 mA - 30 - mS -1.0 -2.0 -3.5 V -4 - - V 19 20 - dBm 7.0 8.0 - dB - 25 - % 19 20 -	OCR Scan	FLR016XP, 18GHz FLR016XP FLR016XV et 1103 Flr016xp	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan		PDF