EUDYNA
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
EUDYNA
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Untitled
Abstract: No abstract text available
Text: FLU17ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=32.5dBm typ. High Gain: G1dB=12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available DESCRIPTION The FLU17ZME1 is a GaAs FET designed for base station and CPE application up to a 4.0GHz frequency range. This is a new product
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FLU17ZME1
FLU17ZME1
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FLU17XM
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
FCSI0598M200
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Untitled
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
FCSI0598M200
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IM320
Abstract: fujitsu flu fujitsu gaas fet L-band
Text: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE
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FLU17ZM
FLU17ZM
FCSI0202M200
IM320
fujitsu flu
fujitsu gaas fet L-band
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PDF
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FLU17XM
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
V4888
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PDF
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Untitled
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: hadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
FCSI0598M200
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PDF
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Untitled
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FETs FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: hadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
VDS19
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FLU17ZM
Abstract: ED-4701 SM 1628
Text: FLU17ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=32.5dBm typ. ・High Gain: G1dB=12.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU17ZM is a GaAs FET designed for base station and CPE
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FLU17ZM
FLU17ZM
ED-4701
SM 1628
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20GHz
Abstract: FLU17XM
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
20GHz
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Untitled
Abstract: No abstract text available
Text: • flU1725 GG774C15 fl ■ 1 SN74BCT2827A, SN74BCT2828A 10-BIT BUSfMOS MEMORY DRIVERS WITH 3-STATE OUTPUTS D 2 9 7 7 , APRIL 1 9 8 7 -R Ê V IS E D APRIL 1 9 8 8 5SE D DW OR NT PACKAGE TOP VIEW BICMOS Design Substantially Reduces Standby Current 25-0 Series Resistors at Outputs
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flU1725
GG774C
SN74BCT2827A,
SN74BCT2828A
10-BIT
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RM4136
Abstract: RC4136N RC4136 RC4136D RM4136FK RV4136 RV4136D RV4136J RV4136N FK800
Text: TEXAS INSTR LIN /IN TFC lflE D • flU17a4 0077S44 T RM4136, RV4136, RC4136 QUAD HIGH-PERFORMANCE OPERATIONAL AMPLIFIERS T -1 9 '0$~ HO NOTICE , S E E ORDER OF DATA FOR ER RA TA _ D2148, MARCH 1978-REVISED NOVEMBER 1988 IN FO RM ATIO N RM4136 . . . J OR W PACKAGE
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0CI77544
RM4136,
RV4136,
RC4136
RC4136
RM4136
RC4136N
RC4136D
RM4136FK
RV4136
RV4136D
RV4136J
RV4136N
FK800
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PDF
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Untitled
Abstract: No abstract text available
Text: FLU17XM L - B an d M edium & High Power GaAs FETs ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C PT Storage Temperature
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OCR Scan
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FLU17XM
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FLU17XM
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P-|C|g=32.5dBnn Typ. • High Gain: G-|C|g=13.5dB (Typ.) • High PAE: r iadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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OCR Scan
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FLU17XM
FLU17XM
FCSI0598M200
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HAI 7203
Abstract: ACT8847 74ACT8847 SN74 multiplier
Text: TEXAS INSTR LOGIC SSE D 0^1723 GQÖS7G3 7 SN74ACT8847 64-Bit Floating Point Unit • Meets IEEE Standard for Single- and DoublePrecision Formats • Performs Floating Point and Integer Add, Subtract, Multiply, Divide, Square Root, and Compare • 64-Bit IEEE Divide in 11 Cycles, 64-Bit Square
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SN74ACT8847
64-Bit
SN74ACT8837
30-ns,
40-ns
50-ns
SN74ACT8847
AGT88X7
HAI 7203
ACT8847
74ACT8847
SN74 multiplier
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PDF
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1971-REVISED
Abstract: 521 opto phototransistor array TIL135
Text: TEXAS INSTR OPTO BSE D flcit il7 2 t i 0Q7SSb0 3 TIL134 THRU TIL136 12-ELEMENT ARRAYS AND 12-CHANNEL PAIR D1093.SEPT6MBER 1971—REVISED SEPTEMBER 1989 TIL134 . . . 12-ELEMENT GALLIUM ARSENIDE IRED ARRAY TIL135 . . . 12-ELEMENT PHOTOTRANSISTOR ARRAY TIL136. . . 12-CHANNEL PAIR
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TIL134
TIL136
12-ELEMENT
12-CHANNEL
D1093
1971--REVISED
TIL134
TIL135
1971-REVISED
521 opto
phototransistor array
TIL135
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PDF
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Untitled
Abstract: No abstract text available
Text: TE XA S INSTR 2S E A S I C / M E M O R Y D • 0^1725 □□77TÖ0 T ■ MPR68C64, MPR68CT64 8192-W ORD BY 8-BIT RAD IATIO N-H AR D ENED STATIC RAMs D3363, OCTOBER 1989 • • 28-PIN PACKAGE 8192 x 8 Organization Silicon-on-lnsulator (SIMOX) for Extreme
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MPR68C64,
MPR68CT64
192-W
D3363,
28-PIN
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FLL105
Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ
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FLL300-1
FLL200-1
FLL300-2
FLL200-3
FLL200-2
FLL120
FLL105
FLL300-3
FLU35
FLL55
FLL105
FLL101
fll171
"FLL105"
FLL-300-1
FLK202
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16-Bit Microprocessors
Abstract: 16-1 multiplexer explain d54j YJ 1100 6
Text: TEXAS INSTR LOGIC 1ÔE D • 0^1723 GGa023b T B SN74ACT29C116A, SN74ACT29C116-1 16-BIT MICROPROCESSORS D3219, FEBRUARY 1989 • 1 /tm EPIC (Enhanced Performance Implanted CMOS) CMOS Technology • 3 2 x 1 6-Bit Register File Can Be W ritten and Read During a Single Cycle
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GGa023b
SN74ACT29C116A,
SN74ACT29C116-1
16-BIT
D3219,
16-Word
an16A,
16-Bit Microprocessors
16-1 multiplexer explain
d54j
YJ 1100 6
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FLL55
Abstract: FLL171ME FLL101ME FLL120MK FLC253MH-6 FLU10XM fll300ip-2 flu10 fll171 FLL351ME
Text: POWER GaAs FETs Electrical Characteristics Ta =25°C PidB TYP. (dB) GidB TYP. (dB) Mattel TYP. (dB) 1 (GHz) Vos (V) (mA) •FLU10XM 29.5 13.5 47 2.0 10 •FLU17XM 32.5 12.5 46 2.0 •FLU35XM 35.5 11.5 46 FLL101ME 29.5 13.5 FLL171ME 32.5 FLL351ME Rth TYP.
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FLU10XM
FLU17XM
FLU35XM
FLL101ME
FLL171ME
FLL351ME
FLL55MK
FLL120MK
FLL200IB-1*
FLL200IB-2*
FLL55
FLL101ME
FLC253MH-6
FLU10XM
fll300ip-2
flu10
fll171
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TMS27256
Abstract: No abstract text available
Text: T TE XA S INS TR UC/UP 2SE D 0^1722 QGV'ìSMT I TMS370CX32 8 -BIT MICROCONTROLLERS T -V 7 -/7 -0 * FEBRUARY 1990 • • TMS370 Configured Microcontroller — PACT Module — A/D Module — Data EEPROM Module FN AND FJ PACKAGES (TOP VIEW) LU (/} 00 S f f l l O ' f O N i - Q r lu a . Û . O L Q . £ L C L Q . a . > < Û tr o o o o o o o o P o
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TMS370CX32
TMS370
TMS27256
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PDF
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74AC11873
Abstract: No abstract text available
Text: TEXAS INSTR LOGIC 31E 3> ^ , 1/ 1 2 3 o a a ^ a s D a 54AC11873, 74AC11873 DUAL 4-BIT D-TYPE LATCHES WITH 3-STATE OUTPUTS ,v , 3-State Buffer-Type Outputs Drive Bus Lines Directly Bus-Structured Pinout Flow-Through Architecture to Optimize PCB Layout 7 _T10167— D3398, MARCH 1990
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54AC11873,
74AC11873
T10167â
D3398,
S4AC11873
500-mA
300-mil
74AC11873
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PDF
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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ccd Linear Sensor identification
Abstract: tri linear CCD
Text: TEXAS INSTR OPTO 5SE D • fiTbl?2b 0075bb1 3 ■ TC102A 128 x 1 CCD LINEAR IMAGE SENSOR D3430, MARCH 1990 T -V /-5 5 SIDE-BRAZED PACKAGE (TOP VIEW) 128 x 1 Sensor Element Organization Virtual-Phase N-Channel Silicon MOS Technology KJ V r e f 1Z High Quantum Efficiency
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OCR Scan
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0075bb1
TC102A
D3430,
TC102A
ccd Linear Sensor identification
tri linear CCD
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