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    AEC-Q100-002

    Abstract: FM25160
    Text: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160C MS-012 FM25C160C, FM25C160CG A00002G1 RIC1051 FM25C160C AEC-Q100-002 FM25160

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    Abstract: No abstract text available
    Text: Preliminary FM25C160C 16Kb Serial 5V F-RAM Memory Features 16K bit Ferroelectric Nonvolatile RAM • Organized as 2,048 x 8 bits  High Endurance 1 Trillion 1012 Read/Writes  36 year Data Retention at +75C  NoDelay Writes  Advanced High-Reliability Ferroelectric Process


    Original     		PDF FM25C160C MS-012 FM25C160C, FM25C160CG A00002G1 RIC1051 FM25C160C