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FM25V02 Abstract: FM25VN02 IS 1007 RAMTRON FM25L256B hardwired fm25l256 Text: Errata for FM25V02 & FM25VN02 1850 Ramtron Drive Colorado Springs, CO 80921 719-481-7000 FAX: 719-488-9095 www.ramtron.com Errata Number 001 Date Sept 21, 2009 Updated: Feb. 2010 Product FM25V02/FM25VN02 – 256Kbit 3V SPI FRAM The FM25V02 and FM25VN02 devices have an error in the Status Register. Bit 6 is hard-wired to a logic 1, but	Original	FM25V02 FM25VN02 FM25V02/FM25VN02 256Kbit FM25V02 FM25VN02 FM25L256B IS 1007 RAMTRON hardwired fm25l256	PDF
Untitled Abstract: No abstract text available Text: FM25V02 256-Kbit 32 K x 8 Serial (SPI) F-RAM 256-Kbit (32 K × 8) Serial (SPI) F-RAM Features Functional Overview • 256-Kbit ferroelectric random access memory (F-RAM) logically organized as 32 K × 8 14 ❐ High-endurance 100 trillion (10 ) read/writes	Original	FM25V02 256-Kbit 256-Kbit 151-year FM25V02	PDF
RG5V02 Abstract: fm25v02 Text: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR RG5V02 fm25v02	PDF
FM25V02 Abstract: No abstract text available Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR FM25V02	PDF
FM25V02 Abstract: FM25VN02 FM25V02-G Text: Preliminary FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32K x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process	Original	FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25VN02 FM25V02-G	PDF
RG5V02 Abstract: FM25V02 FM25V02-GTR FM25V02-G fm25v02gtr Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	FM25V02 256Kb FM25VN02) FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-DGTR RG5V02 FM25V02 fm25v02gtr	PDF
FM25V02-G Abstract: FM25V02-GTR FM25V02 RG5V02 FM25VN02 AEC-Q100-002 C3H marking fm25v02gtr Text: Pre-Production FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • High Endurance 100 Trillion 1014 Read/Writes • 10 Year Data Retention • NoDelay Writes • Advanced High-Reliability Ferroelectric Process	Original	FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG FM25V02-G FM25V02-GTR RG5V02 FM25VN02 AEC-Q100-002 C3H marking fm25v02gtr	PDF
RG5V02 Abstract: RG5VN02 Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits  High Endurance 100 Trillion 1014 Read/Writes  10 Year Data Retention  NoDelay Writes  Advanced High-Reliability Ferroelectric Process	Original	FM25V02 256Kb FM25V02 256-kilobit FM25V02-G FM25VN02-G FM25V02-GTR FM25VN02-GTR FM25V02-DG FM25VN02-DG RG5V02 RG5VN02	PDF
FM25V02-DG Abstract: No abstract text available Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI	Original	FM25V02 256Kb FM25V02-DG	PDF
RG5V02 Abstract: FM25V02-G FM25V02 FM25V02-DG RG5VN02 fm25v02gtr FM25V02G C2H marking C3H marking Text: FM25V02 256Kb Serial 3V F-RAM Memory Features 256K bit Ferroelectric Nonvolatile RAM Organized as 32,768 x 8 bits High Endurance 100 Trillion 1014 Read/Writes 10 Year Data Retention NoDelay Writes Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI	Original	FM25V02 256Kb FM25VN02) RG5V02 FM25V02-G FM25V02 FM25V02-DG RG5VN02 fm25v02gtr FM25V02G C2H marking C3H marking	PDF