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    FORD IGBT Search Results

    FORD IGBT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    FORD IGBT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GEC Marconi Materials Technology

    Abstract: ford ppap INCOMING RAW MATERIAL specification in-process quality control ford motor company Ford in-process quality INCOMING RAW MATERIAL INSPECTION procedure ford m Nokia 9000 INCOMING RAW MATERIAL INSPECTION procedure work instruction raw material stores delco semiconductors
    Text: BRIEF HISTORY of HARRIS SEMICONDUCTOR The modern-day Harris Corporation has its roots in Radiation, Inc., an electronics company formed in Melbourne, Florida, in 1950. Radiation was founded shortly after the first rocket was launched from Cape Canaveral. The company's original staff of 12 employees pioneered the


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    ford fiesta

    Abstract: CAR ALTERNATOR REGULATOR 24 volt IR223X electric motor using float control future enhancement of DC MOTOR SPEED CONTROL CAR ALTERNATOR REGULATOR 3 phase motor soft starter with two SCR
    Text: The Power Conversion Process as a Prosperity Machine Part II — Power Semiconductor Road Maps by Alex Lidow, CEO International Rectifier Last year, I prepared a paper about the role of power conversion in the broadest possible context: power conversion as an instrument for change [1]. To recap very briefly: the


    Original     		PDF 4X1012 352X109 7X109 1X109 8X109 4X109 9X109 5X109 ford fiesta CAR ALTERNATOR REGULATOR 24 volt IR223X electric motor using float control future enhancement of DC MOTOR SPEED CONTROL CAR ALTERNATOR REGULATOR 3 phase motor soft starter with two SCR

    SCHEMATIC WITH IGBTS

    Abstract: AN8603 thyristor rca MOS-Gated Thyristor Abstract schematic power transistor
    Text: Harris Semiconductor No. AN8603.2 Harris Power MOSFETs December 1993 Improved IGBTs with Fast Switching Speed And High-Current Capability Authors: A.M. Goodman, J.R. Russell, L.A. Goodman, C.J. Nuese and J.M. Neilson Abstract Conventional vertical power MOSFETs are limited at high


    Original     		PDF AN8603 ED-26, SCHEMATIC WITH IGBTS thyristor rca MOS-Gated Thyristor Abstract schematic power transistor

    ED26 diode

    Abstract: 8602 RECTIFIER AN8602 mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to that of an n-channel power MOSFET but employs an n-epitaxial layer grown on a p+ substrate. In operation, the


    Original     		PDF AN8602 ED26 diode 8602 RECTIFIER mos Turn-off Thyristor 8602 RECTIFIER 4 PIN P channel 600v 20a IGBT Pelly P channel 600v 30a IGBT applications of mos controlled thyristor INTERSIL 1981

    ED26 diode

    Abstract: mos Turn-off Thyristor MOS Controlled Thyristor AN8602 ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
    Text: Harris Semiconductor No. AN8602.1 Harris Power MOSFETs May 1992 The IGBTs - A New High Conductance MOS-Gated Device Author: J.P. Russell, A.M. Goodman, L.A. Goodman and J.M. Neilson Abstract ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN8602 ED26 diode mos Turn-off Thyristor MOS Controlled Thyristor ED-26 diode mosfet controlled thyristor MOS-Gated Thyristor ford igbt P channel 600v 20a IGBT MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS

    AN8603

    Abstract: MOS-Gated Thyristor
    Text: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN8603.2 Abstract Conventional vertical power MOSFETs are limited at high voltages >500V by the appreciable resistance of their epitaxial drain region. In a new MOS-gate controlled device


    Original     		PDF AN8603 MOS-Gated Thyristor

    MOS Controlled Thyristor

    Abstract: GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract /Title AN75 4 Subect The GBTs A ew i h onucance OSated evice Autho ) Keyords Fairhild orpoation, emionuctor, Cretor () DOCI FO dfark Page- May 1992 AN-7504 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


    Original     		PDF AN-7504 MOS Controlled Thyristor GTO thyristor 5A, 400V ED-26 diode Pelly AN75 AN-7504 MOS-Gated Transistors MOS-Gated Thyristor ED26 diode

    AN-7505

    Abstract: fairchild low power transistor 1977
    Text: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract Title N86 bt mpro d BTs h t itch eed d ghrt paty utho eyrds terrpoon, minctor, er ) OCI O frk Conventional vertical power MOSFETs are limited at high


    Original     		PDF AN-7505 AN-7505 fairchild low power transistor 1977

    applications of mos controlled thyristor

    Abstract: MOS Controlled Thyristor Semiconductor Power AN-7504 mosfet controlled thyristor mos Turn-off Thyristor P channel 600v 20a IGBT ED26 diode Pelly 10A fast Gate Turn-off Thyristor transistor Ia 15 rca
    Text: The IGBTs - A New High Conductance MOS-Gated Device Application Note Abstract Title N86 bt he BTs w gh ncce OSted vice utho eyrds terrpoon, minctor, er OCI O frk geode May 1992 ALUMINUM A new MOS gate-controlled power switch with a very low onresistance is described. The fabrication process is similar to


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    AN-7505

    Abstract: AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices
    Text: Improved IGBTs with Fast Switching Speed And High-Current Capability Application Note December 1993 AN-7505 Abstract /Title AN75 5 Subect Impro ed GBTs ith ast witch ng peed nd ighurent apaility) Autho ) Keyords Interil orpoation, emionuctor, Cretor () DOCI


    Original     		PDF AN-7505 AN-7505 AN75 circuit diagram of thyristor controlled rectifier SCHEMATIC WITH IGBTS MOS-Gated Thyristor semiconductor power devices

    GD Rectifiers

    Abstract: Kopp MS 85 rectificadores bn16 Kopp "MS 85" BROWN BOVERI 125 kw Kopp MS 84 G8N8 edis Shenzhen Abt Electronic
    Text: ADVANCED TECHNICAL INFORMATION Gate Controlled Current Limiter IXCP 01N90E IXCY 01N90E VDSS = 900 V ID limit = 250 mA RDS(on) = 80 W N-Channel, Enhancement Mode D G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 900 V VDGR TJ = 25°C to 150°C; RGS = 1 MW


    Original     		PDF 01N90E O-252 O-220) O-220 O-251/252 GD Rectifiers Kopp MS 85 rectificadores bn16 Kopp "MS 85" BROWN BOVERI 125 kw Kopp MS 84 G8N8 edis Shenzhen Abt Electronic

    siemens ecu

    Abstract: automobile ecu components ECU "ford" siemens automotive ECU Ford diesel siemens automotive sensors siemens ecu 100 ecu repair ford ecu airbag crash sensor dsp
    Text: Above-average growth under the hood Electronics drives automotive innovation N owhere does the remark “nothing moves without electronics” apply so succinctly as to the automobile: its ongoing development is closely associated with the electrical and electronic components and subassemblies which it contains. Up to


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    car airbag ford

    Abstract: siemens ecu ford ecu siemens ecu 100 siemens automotive ECU siemens automotive sensors automobile ecu components ecu ford airbag ecu siemens
    Text: Above-average growth under the hood Electronics drives automotive innovation N owhere does the remark “nothing moves without electronics” apply so succinctly as to the automobile: its ongoing development is closely associated with the electrical and electronic components and subassemblies which it contains. Up to


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    plc based automatic car parking system

    Abstract: denso map sensor Denso radar common rail denso 1 928 403 095 bosch denso ford visteon Bosch radar BOSCH 1 928 403 192 ic mitsubishi 4271 denso mass air flow
    Text: 2000 Annual Report 1 Business Overview Dynex is a research based technology company focused on the supply of products and services in the field of power semiconductors and microwave sensors. Dynex continues to do business in other areas related to the semiconductor and integrated circuit markets.


    Original     		PDF LF5442-1 plc based automatic car parking system denso map sensor Denso radar common rail denso 1 928 403 095 bosch denso ford visteon Bosch radar BOSCH 1 928 403 192 ic mitsubishi 4271 denso mass air flow

    CDF-AEC-Q100

    Abstract: PQA90
    Text: Philips Semiconductors PowerMOS transistors including TOPFETs and IGBTs_ Introduction QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by:


    OCR Scan     		PDF IS09000 CDF-AEC-Q100 -Q101 QS9000 PQA90 CDF-AEC-Q100

    12 VOLT 150 AMP smps

    Abstract: IGBT 50 amp 1000 volt LC BRIDGE CIRCUIT diode v3e igbt 500V 15A OM9034SF OM9035SF 12 VOLT 100 AMP smps IGBT gate driver schematic 10 AMP 1000V RECTIFIER DIODE
    Text: OM9034SF OM9Q35SF HALF BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 30 And 25 Amp IGBT Module With Soft Recovery Rectifier, Half Bridge Configuration With Gate Drivers FEATURES • • • • • Hermetic Isolated Metal Package


    OCR Scan     		PDF OM9034SF OM9Q35SF 6c5G73 12 VOLT 150 AMP smps IGBT 50 amp 1000 volt LC BRIDGE CIRCUIT diode v3e igbt 500V 15A OM9035SF 12 VOLT 100 AMP smps IGBT gate driver schematic 10 AMP 1000V RECTIFIER DIODE

    induction heating schematic

    Abstract: 200 Amp current 1000 volt diode schematic induction heating IGBT 50 amp 1000 volt 250 Amp current 1500 volt diode OM6555SP1 OM6555SP2 OM6556SP1 OM6556SP2 J18-7
    Text: OM6555SP1 OM6556SP1 OM6555SP2 OM6556SP2 1000 Volt, 5 To 25 Amp, N-Channel IGBTs With Free Wheeling Diodes In Multi-Chip Packages FEATURES APPLICATIONS • T w o O r Four IG BTs And Free W heeling Diodes • Half And Full Bridge • 2 5 0 0 V Package Isolation


    OCR Scan     		PDF OM6555SP1 OM6556SP1 OM6555SP2 OM6556SP2 DC340 flTD73 0DD1147 205Crawford 534-5776FAX induction heating schematic 200 Amp current 1000 volt diode schematic induction heating IGBT 50 amp 1000 volt 250 Amp current 1500 volt diode OM6556SP2 J18-7

    schematic induction heating

    Abstract: induction heating schematic OM6553SP1 OM6553SP2 OM6554SP1 OM6554SP2 250 Amp current 1500 volt diode
    Text: OM6553SP1 OM6554SP1 OM6553SP2 OM6554SP2 500 Volt, 5 To 25 Amp, N-Channel IGBTs With Free Wheeling Diodes In Multi-Chip Packages w w FEATURES APPLICATIONS • T w o O r Four IG BTs A n d Free W h eeling D iodes • H alf And Full Bridge • 2 5 0 0V P a ckage Isolation


    OCR Scan     		PDF OM6553SP1 OM6554SP1 OM6553SP2 OM6554SP2 300-TYP. DC340 Q0Q11M3 schematic induction heating induction heating schematic OM6554SP2 250 Amp current 1500 volt diode

    Untitled

    Abstract: No abstract text available
    Text: Illl Œ5B1 I n t e r n a t i o n a l R e c tifie r International Rectifier .around-the-world manufacturing to serve worldwide needs. El Segundo, California © • Power MOSFETs, Control Integrated Circuits, government/military hi-rel devices, microelectronic relays


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    S0T426

    Abstract: INCOMING QUALITY PLANNING FORMAT
    Text: Philips Semiconductors PowerMOS transistors , ^ , . . . mn>- „ . Introduction including TOPFETs and IGBTs_ QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by:


    OCR Scan     		PDF IS09000 CDF-AEC-Q100 -Q101 QS9000 S0T426 INCOMING QUALITY PLANNING FORMAT

    TOPFETs FETs

    Abstract: No abstract text available
    Text: Philips Semiconductors PowerMOS Transistors including TOPFETs and IGBTs Introduction QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by:


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    Gate Drive H-Bridge

    Abstract: No abstract text available
    Text: Preliminary Data Sheet OMD150N06FL OMD6OL6OFL OMD120N10FL OMD50F60FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive


    OCR Scan     		PDF OMD150N06FL OMD120N10FL OMD50F60FL 60L60FL 50F60FL b7inD73 Gate Drive H-Bridge

    50 amp H-bridge Mosfet

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V fast recovery diode 600v 120a OMD120N10FL OMD150N06FL OMD50F60FL OMD60L60FL Linear SOI switch 50F60
    Text: Preliminary Data Sheet OMD150N06FL OMD120N10FL H-BRIDGE, MULTI-CHIP MODULES IN AN INDUSTRIAL ISOLATED PACKAGE OMD6OL6OFL OMD50F60FL 60 To 600 Volt, 50 To 150 Amp Modules With Internal Gate Drive, H-Bridge Configuration FEATURES • • • • • • Internal Gate Drive


    OCR Scan     		PDF OMD150N06FL OMD120N10FL OMD50F60FL flciD73 0Q1D11 50 amp H-bridge Mosfet Fast Recovery Bridge Rectifier, 60A, 600V fast recovery diode 600v 120a OMD50F60FL OMD60L60FL Linear SOI switch 50F60

    dc motor speed control hall pwm analog schematic

    Abstract: 250 amp IGBT FOR pwm DRIVE IGBT 1500v 50A bldc dynamic braking BLDC delta wye control IGBT 40A IGBT 25A HAll EFFECT SENSOR CODING IGBT DRIVER SCHEMATIC 3 PHASE Ir sensor 3 pin details
    Text: OM9369SF Preliminary Data Sheet FULL-FEATURED, SMART-POWER’ MODULE FOR HIGH-VOLTAGE DIRECT DRIVE OF 3-PHASE BRUSHLESS DC MOTORS 50 Amp, Push-Pull, Smart-Power Hybrid Commutates, Controls, And Directly Drives High-Voltage, High-Power 30 BLDC Motors FEATURES


    OCR Scan     		PDF OM9369SF Pin21: Pin39: dc motor speed control hall pwm analog schematic 250 amp IGBT FOR pwm DRIVE IGBT 1500v 50A bldc dynamic braking BLDC delta wye control IGBT 40A IGBT 25A HAll EFFECT SENSOR CODING IGBT DRIVER SCHEMATIC 3 PHASE Ir sensor 3 pin details