BAW76
Abstract: No abstract text available
Text: BAW76 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current
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Original
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BAW76
D-74025
12-Dec-94
BAW76
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PDF
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BAY80
Abstract: No abstract text available
Text: BAY80 Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current
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Original
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BAY80
12-Dec-94
D-74025
BAY80
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PDF
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1N4151
Abstract: No abstract text available
Text: 1N4151 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current
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Original
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1N4151
D-74025
12-Dec-94
1N4151
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PDF
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1N4154
Abstract: telefunken 1n4154
Text: 1N4154 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current
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Original
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1N4154
D-74025
12-Dec-94
1N4154
telefunken 1n4154
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PDF
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BAW75
Abstract: No abstract text available
Text: BAW75 Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current
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Original
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BAW75
D-74025
12-Dec-94
BAW75
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PDF
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Untitled
Abstract: No abstract text available
Text: Photomos / 1A/1B Solid State Relays Model Number Parameters Input Characteristics LED Forward Current - Turn on LED Forward Current - Turn off Recommended Forward Current LED Forward Voltage Sym. LBA110 1A/1B LBA126 1A/1B Max Typ 5.0 2.0 5.0 2.0 mADC Min Typ
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100mA,
LBA110
LBA126
LBA110STR
LBA126
LBA126S
LBA126STR
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PDF
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LBA110
Abstract: LBA126
Text: Photomos / 1A/1B Solid State Relays Model Number Parameters Input Characteristics LED Forward Current - Turn on LED Forward Current - Turn off Recommended Forward Current LED Forward Voltage Sym. LBA110 1A/1B LBA126 1A/1B Max Typ 5.0 2.0 5.0 2.0 mADC Min Typ
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Original
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LBA110
LBA126
100mA,
LBA110
LBA126
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PDF
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G2-1A07
Abstract: 1a05 relay G2-1A06 1A07 1a05 G2-1A05 G2-1A02 G2-1A03 1A13
Text: G2 Series/ 1 FORM A Solid State Relays Model Number Parameters Input Characteristics G2-1A02 G2-1A03 G2-1A05 G2-1A06 G2-1A07 G2-1A13 Sym. LED Forward Current - Turn on IFon LED Forward Current - Turn off IFoff Recommended Forward Current IF LED Forward Voltage
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G2-1A02
G2-1A03
G2-1A05
G2-1A06
G2-1A07
G2-1A13
100mA,
1a05 relay
1A07
1a05
1A13
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PDF
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G2-1A13
Abstract: 1a03 ac G2-1A13-TT G21A02ST G2-1A02st G2-1A05 g2-1a33 1a06
Text: G2 Series/ 1 FORM A Solid State Relays Model Number Parameters Input Characteristics G2-1A02 G2-1A03 G2-1A05 G2-1A06 G2-1A07 G2-1A13 Sym. LED Forward Current - Turn on IFon LED Forward Current - Turn off IFoff Recommended Forward Current IF LED Forward Voltage
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Original
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G2-1A02
G2-1A03
G2-1A05
G2-1A06
G2-1A07
G2-1A13
100mA,
G2-1A02-SR
G2-1A02-ST
G2-1A02-TT
G2-1A13
1a03 ac
G2-1A13-TT
G21A02ST
G2-1A02st
g2-1a33
1a06
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PDF
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G2-AB01
Abstract: G2-AB02
Text: G2 Series/ 1A/1B Solid State Relays Model Number Parameters Input Characteristics LED Forward Current - Turn on LED Forward Current - Turn off Recommended Forward Current LED Forward Voltage Sym. G2-AB01 1A/1B G2-AB02 1A/1B Test Conditions Units IFon IL = 100mA, t = 10ms
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G2-AB01
G2-AB02
100mA,
G2-AB01
G2-AB02
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PDF
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1B MOSFET
Abstract: G2-AB01 G2-AB02
Text: G2 Series/ 1A/1B Solid State Relays Model Number Parameters Input Characteristics LED Forward Current - Turn on LED Forward Current - Turn off Recommended Forward Current LED Forward Voltage Sym. G2-AB01 1A/1B G2-AB02 1A/1B Max Typ 5.0 2.0 5.0 2.0 mADC Min
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Original
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G2-AB01
G2-AB02
100mA,
1B MOSFET
G2-AB01
G2-AB02
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PDF
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BA604
Abstract: No abstract text available
Text: BA604 TELEFUNKEN Semiconductors Silicon Planar Diode Applications General purpose 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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Original
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BA604
50mmx5in
D-74025
BA604
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PDF
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LS485S
Abstract: No abstract text available
Text: LS485S Vishay Telefunken Silicon Epitaxial Planar Diodes Applications General purposes 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage Reverse voltage Forward current Forward peak current Peak forward surge current Junction temperature
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Original
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LS485S
100mA
50mmx50mmx1
D-74025
09-Apr-99
LS485S
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PDF
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BAY80
Abstract: No abstract text available
Text: BAY80 Vishay Telefunken Silicon Epitaxial Planar Diode Applications General purpose 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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Original
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BAY80
01-Apr-99
D-74025
BAY80
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PDF
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Telefunken
Abstract: 9154 1N4154 telefunken 1n4154
Text: 1N4154 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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Original
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1N4154
01-Apr-99
D-74025
Telefunken
9154
1N4154
telefunken 1n4154
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PDF
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BA604
Abstract: No abstract text available
Text: BA604 Vishay Telefunken Silicon Planar Diode Applications General purpose 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Power dissipation
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Original
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BA604
01-Apr-99
50mmx50mmx1
D-74025
BA604
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PDF
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BAW76
Abstract: No abstract text available
Text: BAW76 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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Original
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BAW76
01-Apr-99
D-74025
BAW76
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PDF
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BAW75
Abstract: No abstract text available
Text: BAW75 Vishay Telefunken Silicon Epitaxial Planar Diode Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current
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Original
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BAW75
01-Apr-99
D-74025
BAW75
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PDF
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BAV17
Abstract: BAV18 BAV19 BAV20 BAV21
Text: BAV17.BAV21 TELEFUNKEN Semiconductors Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Reverse voltage g Forward current Peak forward surge current Forward peak current
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BAV17.
BAV21
BAV17
BAV18
BAV19
BAV20
BAV17
BAV18
BAV19
BAV20
BAV21
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PDF
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BA604
Abstract: No abstract text available
Text: BA604 Silicon Planar Diode Applications General purpose 94 9371 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage, non repetitive Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Power dissipation Junction temperature
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Original
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BA604
24-Jun-96
50mmx50mmx1the
D-74025
BA604
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PDF
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BAV17
Abstract: BAV18 BAV19 BAV20 BAV21
Text: BAV17.BAV21 Vishay Telefunken Silicon Epitaxial Planar Diodes Applications General purposes 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Peak reverse voltage g Test Conditions Reverse voltage g Forward current Peak forward surge current Forward peak current
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Original
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BAV17.
BAV21
BAV17
BAV18
BAV19
BAV20
BAV17
BAV18
BAV19
BAV20
BAV21
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PDF
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Untitled
Abstract: No abstract text available
Text: 6A05G THRU FORWARD INTERNATIONAL ELECTRONICS LUX SEMICONDUCTOR TECHNICAL DATA 6A10G TECHNICAL SPECIFICATIONS O F GLASS PASSIVATED RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT-6.0Amperes FEATURES ' ' ‘ * Low cost Low leakage Low forward voltage drop
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OCR Scan
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6A05G
6A10G
MIL-STD-202E,
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PDF
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1N5321
Abstract: 1N5B22
Text: 1N5820 THRU SEM ICONDUCTOR TECHNICAL DATA FORWARD INTERNATIONAL ELECTRONICS LTD. 1N5822 TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE - 20 to 40 Volts CURRENT - 3.0 Amperes FEATURES switching noise Low forward voltage drop High current capability
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OCR Scan
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1N5820
1N5822
DO-27
5820TH
1N5321
1N5B22
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PDF
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TR152
Abstract: No abstract text available
Text: FR151 THRU FORWARD INTERNATIONAL ELECTRONICS L ID . SEMICONDUCTOR TECHNICAL DATA FR157 TECHNICAL SPECIFICATIONS OF FAST RECOVERY RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 1.5 Amperes FEATURES * Fast switching * Low leakage T Low forward voltage drop
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OCR Scan
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FR151
FR157
DO-15
MIL-STD-202E,
FR151
TR152
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PDF
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