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    FQD2N60CTM Price and Stock

    onsemi FQD2N60CTM

    MOSFET N-CH 600V 1.9A DPAK
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    DigiKey FQD2N60CTM Digi-Reel 2,344 1
    • 1 $1.27
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    FQD2N60CTM Cut Tape 2,344 1
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    FQD2N60CTM Reel 1,370 2,500
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    Avnet Americas FQD2N60CTM Reel 14 Weeks 2,500
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    Mouser Electronics FQD2N60CTM 1,462
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    Newark FQD2N60CTM Cut Tape 5
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    Future Electronics FQD2N60CTM Reel 10,000 14 Weeks 2,500
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    FQD2N60CTM Reel 9 Weeks 5,000
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    Onlinecomponents.com FQD2N60CTM
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    Bristol Electronics FQD2N60CTM 2,500
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    Quest Components FQD2N60CTM 1,988
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    Richardson RFPD FQD2N60CTM 2,500
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    Avnet Asia FQD2N60CTM 14 Weeks 2,500
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    Avnet Silica FQD2N60CTM 15 Weeks 2,500
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    EBV Elektronik FQD2N60CTM 2,500 16 Weeks 2,500
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    New Advantage Corporation FQD2N60CTM 2,500 1
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    onsemi FQD2N60CTM-WS

    MOSFET N-CH 600V 1.9A DPAK
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    DigiKey FQD2N60CTM-WS Reel 2,500
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    Newark FQD2N60CTM-WS Reel 2,500
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    Rochester Electronics FQD2N60CTM-WS 50 1
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    TME FQD2N60CTM-WS 1
    • 1 $1.018
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    Flip Electronics FQD2N60CTM-WS 5,000
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    Fairchild Semiconductor Corporation FQD2N60CTM

    POWER FIELD-EFFECT TRANSISTOR, 1.9A I(D), 600V, 4.7OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252
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    Quest Components FQD2N60CTM 6
    • 1 $2.3476
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    Rochester Electronics FQD2N60CTM 22 1
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    Win Source Electronics FQD2N60CTM 232,324
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    FQD2N60CTM Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQD2N60CTM Fairchild Semiconductor 600V N-Channel Advance QFET C-Series; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel Original PDF
    FQD2N60CTM_WS Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 1.9A Original PDF
    FQD2N60CTM-WS ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.9A Original PDF

    FQD2N60CTM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM PDF

    Untitled

    Abstract: No abstract text available
    Text: FQD2N60C / FQU2N60C N-Channel QFET MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS on = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


    Original     		FQD2N60C FQU2N60C PDF