Untitled
Abstract: No abstract text available
Text: FQD17N08 / FQU17N08 May 2000 QFET TM FQD17N08 / FQU17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQD17N08
FQU17N08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FQD17N08L / FQU17N08L N-Channel QFET MOSFET 80 V, 12.9 A, 100 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
|
Original
|
FQD17N08L
FQU17N08L
FQU17N08L
|
PDF
|
FQD17N08
Abstract: FQU17N08
Text: QFET TM FQD17N08 / FQU17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQD17N08
FQU17N08
FQU17N08
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET TM FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
|
Original
|
FQD17N08L
FQU17N08L
FQU17N08L
FQU17N08LTU
O-251
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FQD17N08L / FQU17N08L August 2000 QFET TM FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQD17N08L
FQU17N08L
|
PDF
|
dpak mosfet motor control DC 12v
Abstract: No abstract text available
Text: QFET TM FQD17N08 / FQU17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQD17N08
FQU17N08
FQD17N08TF
FQD17N08TM
O-252
dpak mosfet motor control DC 12v
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FQD17N08L / FQU17N08L June 2000 QFET TM FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
|
Original
|
FQD17N08L
FQU17N08L
|
PDF
|
*17n08
Abstract: TO-251 fairchild
Text: QFET TM FQD17N08 / FQU17N08 80V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
|
Original
|
FQD17N08
FQU17N08
FQU17N08
FQU17N08TU
O-251
*17n08
TO-251 fairchild
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET FQD17N08L / FQU17N08L TM 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
|
Original
|
FQD17N08L
FQU17N08L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FQD17N08L / FQU17N08L N-Channel QFET MOSFET 80 V, 12.9 A, 100 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor ’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce
|
Original
|
FQD17N08L
FQU17N08L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: QFET TM FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
|
Original
|
FQD17N08L
FQU17N08L
FQD17N08LTF
FQD17N08LTM
O-252
|
PDF
|
FQD17N08L
Abstract: FQU17N08L
Text: QFET TM FQD17N08L / FQU17N08L 80V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize
|
Original
|
FQD17N08L
FQU17N08L
FQU17N08L
|
PDF
|
FDC6331
Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Text: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3
|
Original
|
2N7002
2N7002MTF
BS170
BSS123
BSS138
BSS84
FDB045AN08A0
FDB2532
FDB3632
FDB3652
FDC6331
fdp047an
FDB045AN
FQPF10N20
FQA70N15
FQPF*13N06L
fdd5614p
fqp50n06
TO252-DPAK
FDC6305
|
PDF
|
thermistor KSD201
Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™
|
Original
|
|
PDF
|
|
|
IRFU210A
Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL
Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031
|
Original
|
O-251
O-251
FDU3706
FDU6512A
ISL9N308AD3
ISL9N312AD3
ISL9N306AD3
FDU6644
FDU6680A
FDU7037P06
IRFU210A
IRFU230A
FDU3706
FDU6030BL
FDU6512A
FDU6612A
FDU6644
FDU6680A
FDU6692
FDU7030BL
|
PDF
|
SSP6N60A
Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
|
Original
|
SC70-6
OT-23)
FDR8321L
FDR8521L
FDFS2P106A
FDFS2P103
FDFS2P102
SSP6N60A
IRF650
IRF540 mosfet with maximum VDS 12v
SSP2N60B
SSS7N60B
ssr2955
IRFS630A
SSP4N60A
sss3n90a
IRF634A
|
PDF
|
FQPf10N60C
Abstract: FQPF*10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF*5n50c IRF650 FQA90N08
Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V
|
Original
|
FDZ201N
FDZ209N
FDZ2553N
FDZ2553NZ
FDZ2551N
FDZ7064N
SFF9140
FQAF47P06
SSF10N60B
SSF7N60B
FQPf10N60C
FQPF*10n20c
FQPF10N20C
FQP17P06
fqpf6n80
FQP630 equivalent
FQU17P06
FQPF*5n50c
IRF650
FQA90N08
|
PDF
|
