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    Untitled

    Abstract: No abstract text available
    Text: 2SC1762-2 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450ö V(BR)CBO (V)850 I(C) Max. (A)150m Absolute Max. Power Diss. (W)8.0 Maximum Operating Temp (øC)125õ I(CBO) Max. (A)2.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		PDF 2SC1762-2 Freq13M time250nÃ

    Untitled

    Abstract: No abstract text available
    Text: NTE80 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)300 V(BR)CBO (V)700 I(C) Max. (A)1 Absolute Max. Power Diss. (W)8 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF NTE80 Freq13M

    2N2624

    Abstract: No abstract text available
    Text: 2N2624 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)15 I(C) Max. (A)100m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)125þ I(CBO) Max. (A)16uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.15 h(FE) Max. Current gain.


    Original     		PDF 2N2624 Freq13M