CY7C4255
Abstract: CY7C4265 CY7C42X5 only-10
Text: fax id: 5413 1CY 7C42 65 CY7C4255 CY7C4265 PRELIMINARY 8K/16Kx18 Deep Sync FIFOs Features are 18 bits wide and are pin/functionally compatible to the CY7C42X5 Synchronous FIFO family. The CY7C4255/65 can be cascaded to increase FIFO depth. Programmable features
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CY7C4255
CY7C4265
8K/16Kx18
CY7C42X5
CY7C4255/65
CY7C4255)
CY7C4265)
100-MHz
CY7C4255
CY7C4265
only-10
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CY7C4261
Abstract: CY7C4271 CY7C4271-15LMB
Text: CY7C4261 CY7C4271 16K/32Kx9 Deep Sync FIFOs Features Functional Description • High-speed, low-power, first-in first-out FIFO memories • 16K x 9 (CY7C4261) • 32K x 9 (CY7C4271) • 0.5 micron CMOS for optimum speed/power • High-speed 100-MHz operation (10 ns read/write cycle
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CY7C4261
CY7C4271
16K/32Kx9
CY7C4261)
CY7C4271)
100-MHz
CY7C4271-15LMB
32-pwhere
CY7C4261
CY7C4271
CY7C4271-15LMB
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Untitled
Abstract: No abstract text available
Text: TRL6015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)600ã V(BR)CBO (V)600 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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TRL6015
Freq20M
time400n
eq20M
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Untitled
Abstract: No abstract text available
Text: SDM20312 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k
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SDM20312
Freq20M
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Untitled
Abstract: No abstract text available
Text: 1781-1240 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)130 I(C) Max. (A)50 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq20M
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Untitled
Abstract: No abstract text available
Text: BDW94 Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)12 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.20k
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BDW94
Freq20M
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Untitled
Abstract: No abstract text available
Text: NTE2314 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)15 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)
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NTE2314
Freq20M
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Untitled
Abstract: No abstract text available
Text: MJ15021 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)250 V(BR)CBO (V)250 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)500u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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MJ15021
Freq20M
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Untitled
Abstract: No abstract text available
Text: 1776-1040 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)60 I(C) Max. (A)75 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq20M
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Untitled
Abstract: No abstract text available
Text: BDW94C Transistors PNP Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.20k
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BDW94C
Freq20M
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Untitled
Abstract: No abstract text available
Text: 2SC2608 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200è V(BR)CBO (V)200 I(C) Max. (A)17 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)100u¥ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC2608
Freq20M
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Untitled
Abstract: No abstract text available
Text: PU4511 Transistors Common Emitter Transistor Array Number of Devices4 Type NPN/PNP PNP V(BR)CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)4 P(D) Max. (W)15# Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)
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PU4511
Freq20MÃ
eq20MÃ
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Untitled
Abstract: No abstract text available
Text: TRSP2255 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)225ã V(BR)CBO (V)225 I(C) Max. (A)400m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)3.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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TRSP2255
Freq20M
time200n
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Untitled
Abstract: No abstract text available
Text: SDM20302 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)500u÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k
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SDM20302
Freq20M
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Untitled
Abstract: No abstract text available
Text: 2SC4581 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)450 V(BR)CBO (V)600 I(C) Max. (A)100 Absolute Max. Power Diss. (W)65# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)600 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)5.0
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2SC4581
Freq20M
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Untitled
Abstract: No abstract text available
Text: 2SC4418 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)500 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC4418
Freq20M
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Untitled
Abstract: No abstract text available
Text: 2SC3949 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)500 V(BR)CBO (V)850 I(C) Max. (A)15 Absolute Max. Power Diss. (W)80 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2SC3949
Freq20M
time500n
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Untitled
Abstract: No abstract text available
Text: 1776-1060 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)60 I(C) Max. (A)75 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq20M
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Untitled
Abstract: No abstract text available
Text: B3556 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)90 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175# I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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B3556
Freq20M
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metal case REGULATOR IC 7812 pin diagram
Abstract: CY7C4275 CY7C4285 CY7C42X5
Text: fax id: 5416 ^;aaazgg st CY7C4275 CY7C4285 PRELIMINARY ; U I F lm c b ti 32K/64Kx18 1 Meg Deep Sync FIFOs Functional Description Features H ig h-speed , low -pow er, first-in first-o u t F IF O m em o ries 32K x 18 (C Y 7 C 42 75 ) 64K x 18 (C Y 7 C 42 85 )
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CY7C4275
CY7C4285
32K/64Kx18
CY7C4275)
CY7C4285)
100-MHz
metal case REGULATOR IC 7812 pin diagram
CY7C4285
CY7C42X5
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Untitled
Abstract: No abstract text available
Text: fax id: 5415 W CYPRESS CY7C4281 CY7C4291 PRELIMINARY 64K/128Kx9 1 Meg Deep Sync FIFOs Features • P in -c o m p a tib le d en sity u p g ra d e to ID T 722 01 /11/21/31/41/51 H ig h-speed , low -p ow er, first-in firs t-o u t F IF O m em o ries Functional Description
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CY7C4281
CY7C4291
64K/128Kx9
CY7C42X1
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Untitled
Abstract: No abstract text available
Text: fax id: 5413 CY7C4255 CY7C4265 3F CYPRESS 8K/16Kx18 Deep Sync FIFOs Features • H ig h-speed , low -pow er, first-in firs t-o u t F IF O m em o ries • 8K x 18 (C Y 7 C 42 55 ) • 16K x 18 (C Y 7 C 42 65 ) • 0.5 m icron C M O S fo r o p tim u m sp ee d /p o w e r
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CY7C4255
CY7C4265
8K/16Kx18
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a32 smd
Abstract: No abstract text available
Text: fax id: 5412 '•'■'■'■'■'■'■‘JJSt>iW.-. a S S K , : CY7C4261 CY7C4271 'S^ì,„*$ & :*■ _ jg ? . "T 16K/32Kx9 Deep Sync FIFOs Features Functional Description High-speed, low-power, first-in first-out FIFO memories 16K x 9 (CY7C4261)
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CY7C4261
CY7C4271
16K/32Kx9
CY7C4261)
CY7C4271)
100-MHz
a32 smd
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Untitled
Abstract: No abstract text available
Text: fax id: 5415 CYPRESS PRELIMINARY CY7C4281 CY7C4291 64K/128Kx9 Deep Sync FIFOs Features • Pin-compatible density upgrade to IDT72201/11/21/31/41/51 • High-speed, low-power, first-in first-out FIFO memories • 64k X 9 (CY7C4281) • 128k X 9 (CY7C4291)
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CY7C4281
CY7C4291
64K/128Kx9
IDT72201/11/21/31/41/51
CY7C4281)
CY7C4291)
100-MHz
Expansio7C4291
CY7C4281-10JC
CY7C4281-10JI
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