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    Text: 2SC1588 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)300m Absolute Max. Power Diss. (W)1.7 Minimum Operating Temp (øC) Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)


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    Text: 2SC1196 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)60 I(C) Max. (A)750m Absolute Max. Power Diss. (W)10 Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition)


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    Text: 1561-1604 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)15 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175# I(CBO) Max. (A)2.0÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: SDM4005 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.


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    Text: 1561-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: NTE108 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)600m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		NTE108 Freq800M PDF

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    Text: 2N6101 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)10


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    Text: 1571-1425 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1571-1220 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 2N1234 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)110 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m


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    Text: 40469 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)50m Absolute Max. Power Diss. (W)180m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)


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    Text: 40476 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)50m Absolute Max. Power Diss. (W)180m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)


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    Text: BF547 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)30 I(C) Max. (A) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)10


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    Text: 2N6253 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)55 I(C) Max. (A)15 Absolute Max. Power Diss. (W)115# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5m° @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15


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    Text: 1561-1615 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175# I(CBO) Max. (A)2.0÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1561-1410 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: SCA3239 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20nØ @V(CBO) (V) (Test Condition)


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    Text: 1571-1025 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1571-1620 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: 1561-1004 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175# I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    Text: SDM4002 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.


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    Text: 2N6024 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)36# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100m° @V(CBO) (V) (Test Condition)40 V(CE)sat Max. (V)2.0 @I(C) (A) (Test Condition)3.6


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    Text: 2N6102 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)45 I(C) Max. (A)16 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m° @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)16


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    Text: HA7542 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)110 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		HA7542 Freq800k PDF