Untitled
Abstract: No abstract text available
Text: IRG7CH37K10EF INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.9V @ IC= 15A E n-channel Applications • Medium Power Drives UPS HEV Inverter Welding G C E Gate Collector Emitter Features
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IRG7CH37K10EF
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IRG8CH29K10F
Abstract: No abstract text available
Text: IRG8CH29K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 25A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 25A E n-channel Applications • Industrial Motor Drives UPS HEV Inverter Welding G C E Gate Collector Emitter Features
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IRG8CH29K10F
IRG8CH29K10F
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IRG8CH20K10F
Abstract: No abstract text available
Text: IRG8CH20K10F INSULATED GATE BIPOLAR TRANSISTOR C VCES = 1200V IC Nominal = 15A TJ(max) = 175°C G VCE(on) typ = 1.7V @ IC= 15A E n-channel Applications • Industrial Motor Drives UPS HEV Inverter Welding G C E Gate Collector Emitter
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IRG8CH20K10F
IRG8CH20K10F
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square d Type KA
Abstract: front metal rectifier square type
Text: Bulletin I0131J 09/00 IR150DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 150 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 12F Series Major Ratings and Characteristics Parameters
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I0131J
IR150DG.
square d Type KA
front metal rectifier square type
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T110HF
Abstract: No abstract text available
Text: Bulletin I0137J 05/99 IR480DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 480 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: T110HF Series Major Ratings and Characteristics
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I0137J
IR480DG.
T110HF
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Untitled
Abstract: No abstract text available
Text: Bulletin I0134J 05/99 IR230DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 9AF Series Major Ratings and Characteristics Parameters
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I0134J
IR230DG.
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Untitled
Abstract: No abstract text available
Text: Bulletin I0132J 05/99 IR180DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 26MB Series Major Ratings and Characteristics Parameters
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I0132J
IR180DG.
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KA DIODE
Abstract: 40HF
Text: Bulletin I0133J 05/99 IR210DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 210 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 40HF Series Major Ratings and Characteristics Parameters
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I0133J
IR210DG.
KA DIODE
40HF
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T70HF
Abstract: No abstract text available
Text: Bulletin I0136J 05/99 IR350DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 350 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: T70HF Series Major Ratings and Characteristics
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I0136J
IR350DG.
T70HF
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70HF
Abstract: No abstract text available
Text: Bulletin I0135J 05/99 IR280DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 280 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 70HF Series Major Ratings and Characteristics Parameters
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I0135J
IR280DG.
70HF
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amp circuit diagrams 300w
Abstract: 5196-04-RE 7805 rectifier BY 236 UL508A 2505 photocoupler "by 236" EN50082-2 S82J 100-W
Text: Switching Power Supply S82J Compact and Economical Switching Power Supplies with Capacities Up to 600 W DIN Track Mounting Bracket Type Now Available Power range from 10 W up to 600 W. Output Voltages: 5 V, 12 V, 15 V, or 24 V. Wide AC input range 10-/25-/50-/100-W, 24-V output models: 100 to 240 VAC on one body
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10-/25-/50-/100-W,
5-/12-/15-V
300-/600-W
M047-E1-6
75-344-7108/Fax:
0301-2M
amp circuit diagrams 300w
5196-04-RE
7805 rectifier
BY 236
UL508A
2505 photocoupler
"by 236"
EN50082-2
S82J
100-W
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600w switch mode power supply circuit diagram
Abstract: L9112 10015a S82J-05024A S82J-05024DD 7805 rectifier 02524 pcb design for amplifier w/ 12 v dc supply transistor 60024 5277-04A-RE
Text: Switch mode Power Supply S82J Compact and Economical Switch mode Power Supplies with Capacities Up to 600 W DIN Track Mounting Bracket Type Now Available • Power range from 10 W up to 600 W. • Output Voltages: 5 V, 12 V, 15 V, or 24 V. • Mounting bracket provided for mounting to control panels.
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300-/600-W
EN50081-2
EN50082-2.
EN50081-1
VDE0106/P100
S82Y-JFAN
M047-E1-07
600w switch mode power supply circuit diagram
L9112
10015a
S82J-05024A
S82J-05024DD
7805 rectifier
02524
pcb design for amplifier w/ 12 v dc supply
transistor 60024
5277-04A-RE
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1N3595US
Abstract: No abstract text available
Text: DIODES SCA1N3595 RECTIFIER Ultra Low Leakage Radiation Hardness Assured Y R A DESCRIPTION This “high reliability ultra low leakage” rectifier diode is suitable for numerous applications in space and military area. Constructed in glass packages using an internal category-I metallurgical bond as tested per MIL-PRF-19500, this rectifier offers the working peak reverse voltage of 125V with 150mA maximum current rating. These devices are also
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SCA1N3595
MIL-PRF-19500,
150mA
1N3595
1N3595US
1N3595US
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40HF
Abstract: international rectifier class d
Text: Bulletin I0133J 05/99 IR210DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 210 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 40HF Series Major Ratings and Characteristics Parameters
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I0133J
IR210DG.
12-Mar-07
40HF
international rectifier class d
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T110HF
Abstract: metal rectifier diode
Text: Bulletin I0137J 05/99 IR480DG.HCB SERIES HIGH POWER RECTIFIER DIODES Junction Size: Square 480 mils Wafer Size: 4" VRRM Class: 600 and 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: T110HF Series Major Ratings and Characteristics
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I0137J
IR480DG.
T110HF
12-Mar-07
metal rectifier diode
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WAFER International Rectifier
Abstract: IR hexfet probe specifications 93825
Text: Preliminary Data Sheet I0146J 02/02 IR155DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 15ETS Series Major Ratings and Characteristics
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I0146J
IR155DM16CCB
15ETS
12-Mar-07
WAFER International Rectifier
IR hexfet probe specifications
93825
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IR1155
Abstract: No abstract text available
Text: Bulletin I0213J 12/01 IR155BG12DCB PHASE CONTROL THYRISTORS Junction Size: Square 155 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MESA Reference IR Packaged Part: 16TTS Series Major Ratings and Characteristics Parameters Units Test Conditions
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I0213J
IR155BG12DCB
16TTS
12-Mar-07
IR1155
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20ETF
Abstract: No abstract text available
Text: Bulletin I0124J 07/97 IR180LM.CS02CB SERIES FAST RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 200 to 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics Parameters
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I0124J
IR180LM.
CS02CB
20ETF
12-Mar-07
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20ETF
Abstract: No abstract text available
Text: Bulletin I0125J 07/97 IR180LM.CS05CB SERIES FAST RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 1000 and 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics Parameters
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I0125J
IR180LM.
CS05CB
20ETF
12-Mar-07
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20ETS
Abstract: IR180DM
Text: Bulletin I0120J rev. A 02/97 IR180DM.CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 800 and 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics
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I0120J
IR180DM.
20ETS
12-Mar-07
IR180DM
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IR230LM06CS02CB
Abstract: 40EPF
Text: Bulletin I0126J 08/97 IR230LM06CS02CB FAST RECOVERY DIODE Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPF Series Major Ratings and Characteristics Parameters Units 1080 mV
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I0126J
IR230LM06CS02CB
40EPF
12-Mar-07
IR230LM06CS02CB
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40EPS
Abstract: IR230DM12CCB WAFER International Rectifier
Text: Bulletin I0121J rev. A 02/97 IR230DM12CCB STANDARD RECOVERY DIODES Junction Size: Square 230 mils Wafer Size: 4" VRRM Class: 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 40EPS Series Major Ratings and Characteristics Parameters
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I0121J
IR230DM12CCB
40EPS
12-Mar-07
IR230DM12CCB
WAFER International Rectifier
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20ETS
Abstract: IR180DM16CCB
Text: Bulletin I0116J 09/00 IR180DM16CCB SERIES STANDARD RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 1600 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETS Series Major Ratings and Characteristics Parameters
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I0116J
IR180DM16CCB
20ETS
12-Mar-07
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omron S82J-6024
Abstract: S82J-6024 S82J-1024 S82J-5024 S82J-15024D2 S82J-0524 S82J-5524 S82J-2024 S82J-6524 S82Y-JC-T
Text: Switching Power Supply S82J Open-Frame, Covered-Frame, or Enclosed-Frame Type with Capacity Up to 600 W Models range from 10 W to 600 W Wide range of output voltages: 5 V, 12 V, 15 V, or 24 V UL, CSA, VDE, and CE Approvals 10 to 150 W models can easily be
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S82J-0105
S82J-2105
S82J-0112
S82J-2112
S82J-0115
S82J-2115
S82J-0124
S82J-2124
S82J-0205
S82J-2205
omron S82J-6024
S82J-6024
S82J-1024
S82J-5024
S82J-15024D2
S82J-0524
S82J-5524
S82J-2024
S82J-6524
S82Y-JC-T
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