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Rochester Electronics LLC FSS133-TL-E MOSFET P-CH
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FSS133-TL-E	Bulk			392	1 - 10 - 100 - 1000 $0.77 10000 $0.77	Buy Now
Rochester Electronics LLC FSS132-TL-E PCH 4V DRIVE SERIES
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DigiKey	FSS132-TL-E	Bulk			392	1 - 10 - 100 - 1000 $0.77 10000 $0.77	Buy Now
Rochester Electronics LLC FSS134A-TL-E PCH 4V DRIVE SERIES
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DigiKey	FSS134A-TL-E	Bulk			355	1 - 10 - 100 - 1000 $0.85 10000 $0.85	Buy Now
Samtec Inc QFSS-130-04.25-L-D-A .635MM DOUBLE ROW SHIELDED TERMI Free Sample
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DigiKey	QFSS-130-04.25-L-D-A	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	QFSS-130-04.25-L-D-A	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Master Electronics	QFSS-130-04.25-L-D-A					1 - 10 - 100 $32.71 1000 $22.55 10000 $22.55	Buy Now
Sager	QFSS-130-04.25-L-D-A					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samtec Inc SFSS-13-28-H-05.00-S SINGLE ROW DISCRETE WIRE ASSEMBL Free Sample
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SFSS-13-28-H-05.00-S	Bulk			1	1 $10.28 10 $10.28 100 $10.28 1000 $10.28 10000 $10.28	Buy Now
Avnet Americas	SFSS-13-28-H-05.00-S	Bulk			1	1 $10.28 10 $9.5 100 $7.24 1000 $7.24 10000 $7.24	Buy Now
Mouser Electronics	SFSS-13-28-H-05.00-S					1 $10.28 10 $9.5 100 $7.24 1000 $5.83 10000 $5.83	Get Quote
Master Electronics	SFSS-13-28-H-05.00-S					1 - 10 $12.76 100 $7.87 1000 $6.15 10000 $6.15	Buy Now
Sager	SFSS-13-28-H-05.00-S				1	1 $10.28 10 $9.5 100 $7.24 1000 $6.77 10000 $6.77	Buy Now

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FSS13 Datasheets (43)

Part	Manufacturer	Description	Datasheet Type	PDF
FSS13	Fagor	1 Amp. Surface Mounted Schottky Barrier Rectifier	Original	PDF
FSS130D	Intersil	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130D1	Fairchild Semiconductor	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130D1	Intersil	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130D3	Fairchild Semiconductor	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET	Original	PDF
FSS130D3	Intersil	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130R	Intersil	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130R1	Fairchild Semiconductor	11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET	Original	PDF
FSS130R1	Intersil	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130R3	Fairchild Semiconductor	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130R3	Intersil	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130R4	Fairchild Semiconductor	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130R4	Intersil	11A, 100V, 0.210 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs	Original	PDF
FSS130R4	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF

FSS131	Sanyo Semiconductor	Load switch	Original	PDF
FSS132	Sanyo Semiconductor	Power MOSFETs(P channel)	Original	PDF
FSS132-E	Sanyo Semiconductor	Transistor Mosfet P-CH 30V 7A 8SOP	Original	PDF
FSS133	Sanyo Semiconductor	Load switch	Original	PDF
FSS133-E	Sanyo Semiconductor	Transistor Mosfet P-CH 20V 8A 8SOP	Original	PDF
FSS134	Sanyo Semiconductor	Power MOSFETs(P channel)	Original	PDF

FSS13 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs	Original	PDF	JANSR2N7399 FSS130R4
MOSFET MARK H1 Abstract: 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 99 /Subject (11A, 100V, 0.210 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines	Original	PDF	JANSR2N7399 FSS130R4 R2N73 MOSFET MARK H1 2E12 FSS130R4 JANSR2N7399 T0-257AA Rad Hard in Fairchild for MOSFET
schottky diode 100A Abstract: DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214 Text: QUICK GUIDE Schottky Rectifier SCHOTTKY RECTIFIERS (SURFACE MOUNTED DEVICES) IF IFSM 20V 30V 40V 50V 60V FSS1 1A 40A FSS12 FSS13 FSS14 FSS15* FSS16* 0.50V 0.75V* DO214-AC FSS2 2A 50A FSS22 FSS23 FSS24 FSS25* FSS26* 0.50V 0.70V* DO214-AA FSS3 3A 100A FSS32	Original	PDF	FSS12 FSS13 FSS14 FSS15* FSS16* DO214-AC FSS22 FSS23 FSS24 FSS25* schottky diode 100A DO214 rectifier 50a Schottky Diode 50V 3A 50a rectifier circuit 50A schottky rectifier DO214-AB transistor 100a Schottky rectifier 3A 60v diode DO214
2E12 Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 Text: FSS13A0D, FSS13A0R TM Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	Original	PDF	FSS13A0D, FSS13A0R 2E12 FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1
2E12 Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 Rad Hard in Fairchild for MOSFET Text: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	Original	PDF	FSS13A0D, FSS13A0R 2E12 FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 Rad Hard in Fairchild for MOSFET
2E12 Abstract: FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET Text: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically	Original	PDF	FSS130D, FSS130R 2E12 FSS130D FSS130D1 FSS130D3 FSS130R FSS130R1 FSS130R3 Rad Hard in Fairchild for MOSFET
marking S132 Abstract: FSS132 S132 TA2720 Text: Ordering number:ENN6398 P-Channel Silicon MOSFET FSS132 Load Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS132] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27	Original	PDF	ENN6398 FSS132 FSS132] marking S132 FSS132 S132 TA2720
FSS138 Abstract: No abstract text available Text: Ordering number:ENN6400 P-Channel Silicon MOSFET FSS138 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS138] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27	Original	PDF	ENN6400 FSS138 FSS138] FSS138
2E12 Abstract: FSS130R4 JANSR2N7399 T0-257AA Text: JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event	Original	PDF	JANSR2N7399 FSS130R4 2E12 FSS130R4 JANSR2N7399 T0-257AA
FSS133 Abstract: S133 Text: Ordering number : ENN6919 FSS133 P-Channel Silicon MOSFET FSS133 _ Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS133] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications	Original	PDF	ENN6919 FSS133 FSS133] FSS133 S133
FSS138 Abstract: IT00414 Text: Ordering number:ENN6400 P-Channel Silicon MOSFET FSS138 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2116 [FSS138] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications 1.27	Original	PDF	ENN6400 FSS138 FSS138] FSS138 IT00414
Rad Hard in Fairchild for MOSFET Abstract: No abstract text available Text: FSS130D, FSS130R 11A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 11A, 100V, rDS ON = 0.210Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically	Original	PDF	FSS130D, FSS130R Rad Hard in Fairchild for MOSFET
IT02300 Abstract: TA-2723 FSS139 S139 ENN7019 Text: Ordering number : ENN7019 FSS139 P-Channel Silicon MOSFET FSS139 Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS139] 5 4 0.2 1.8max 1 6.0 4.4 0.3 8 0.595 Specifications	Original	PDF	ENN7019 FSS139 FSS139] IT02300 TA-2723 FSS139 S139 ENN7019
2E12 Abstract: FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 Rad hard for Harris Text: FSS13A0D, FSS13A0R Data Sheet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	Original	PDF	FSS13A0D, FSS13A0R 1-800-4-HARRIS 2E12 FSS13A0D FSS13A0D1 FSS13A0D3 FSS13A0R FSS13A0R1 FSS13A0R3 Rad hard for Harris

marking S139 Abstract: IT02300 FSS139 S139 Text: Ordering number : ENN7019 FSS139 SANYO Semiconductors DATA SHEET FSS139 P-Channel Silicon MOSFET Load Switching Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2116 [FSS139] 5 4 0.2 1.8max	Original	PDF	ENN7019 FSS139 FSS139] marking S139 IT02300 FSS139 S139
transistors ai 585 Abstract: No abstract text available Text: FSS130D, FSS130R S em iconductor 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description . 11 A, 100V, rDS 0 N = 0.210£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSS130D, FSS130R O-257AA MIL-S-19500 transistors ai 585
Untitled Abstract: No abstract text available Text: j Ordering number : ENN7019 P-Channel Silicon MOSFET FSS139 IS A ß ro i Load Switching Applications Package Dimensions Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. u n it: mm 2116 [FSS139] MM □ □ 1 □ 1 : Source 2 : Source	OCR Scan	PDF	ENN7019 FSS139 FSS139]
Untitled Abstract: No abstract text available Text: h a r S E M I C O N D U C T O R FSS130D, FSS130R " Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 11 A, 100V, rDS ON = 0.210£i TO-257AA • Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) • Single Event	OCR Scan	PDF	FSS130D, FSS130R O-257AA 1-800-4-HARRIS
4431 mosfet Abstract: No abstract text available Text: S JANSR2N7399 Formerly FSS130R4 11A, 100V, 0.210 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 11A,100V,rDS ON = 0.21012 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	PDF	FSS130R4 JANSR2N7399 MIL-STD-750, MIL-S-19500, 100ms; 500ms; 4431 mosfet
fss130 Abstract: No abstract text available Text: ¡BMí*« ? FSS130D, FSS130R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June1997 Features Package • 11 A, 100V, rDS ON = 0.210Í2 TO-257AA Total Dose Meets Pre-Rad Specifications to 100K RAD (Si) Single Event Safe Operating Area Curve for Single Event Effects	OCR Scan	PDF	e1997 FSS130D, FSS130R O-257AA 36MeV/mg/cm2 1-800-4-HARRIS fss130
Untitled Abstract: No abstract text available Text: FSS130D, FSS130R 11 A, 100V, 0.210 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 11 A, 100V, rDS 0N = 0.21 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	PDF	FSS130D, FSS130R 36MeV/mg/cm2 MIL-STD-750, MIL-S-19500, 100ms; 500ms;
Untitled Abstract: No abstract text available Text: Ordering number : ENN6919 P-Channel Silicon MOSFET FSS133 ISAÈÊYO Load Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. . 2.5V drive. unit : mm 2116 Specifications Absolute Maximum Ratings at Ta=25°C	OCR Scan	PDF	ENN6919 FSS133 1200mm2X0
Untitled Abstract: No abstract text available Text: j Ordering number : ENN6786 j P-Channel Silicon MOSFET FSS131 Load Switching Applications Features Package Dimensions unit : mm 2116 • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. [FSS131] 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain	OCR Scan	PDF	ENN6786 FSS131 FSS131] 1200m
Untitled Abstract: No abstract text available Text: FSS13A0D, FSS13A0R Ju ly 1999 D ata S h eet 2A, 100V, 0.170 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space	OCR Scan	PDF	FSS13A0D, FSS13A0R 1-800-4-HARRIS

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FSS13 Price and Stock

Rochester Electronics LLC FSS133-TL-E

Rochester Electronics LLC FSS132-TL-E

Rochester Electronics LLC FSS134A-TL-E

Samtec Inc QFSS-130-04.25-L-D-A

Samtec Inc SFSS-13-28-H-05.00-S

FSS13 Datasheets (43)

FSS13 Datasheets Context Search

Untitled

MOSFET MARK H1

schottky diode 100A

2E12

2E12

2E12

marking S132

FSS138

2E12

FSS133

FSS138

Rad Hard in Fairchild for MOSFET

IT02300

2E12

marking S139

transistors ai 585

Untitled

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4431 mosfet

fss130

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