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    FSYC160R Search Results

    FSYC160R Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSYC160R Intersil Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSYC160R1 Fairchild Semiconductor Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSYC160R1 Intersil Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSYC160R3 Fairchild Semiconductor Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSYC160R3 Fairchild Semiconductor Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSYC160R3 Intersil Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSYC160R4 Fairchild Semiconductor Radiation Hardened, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSYC160R4 Fairchild Semiconductor Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSYC160R4 Intersil Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Original PDF

    FSYC160R Datasheets Context Search

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    2E12

    Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically


    Original     		PDF FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4 Rad Hard in Fairchild for MOSFET

    2E12

    Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4

    2E12

    Abstract: FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		PDF FSYC160D, FSYC160R 2E12 FSYC160D FSYC160D1 FSYC160D3 FSYC160R FSYC160R1 FSYC160R3 FSYC160R4

    Untitled

    Abstract: No abstract text available
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1998 Features Description . 70A, 100V, rDS 0 N = 0.022£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSYC160D, FSYC160R FSYC160R

    Untitled

    Abstract: No abstract text available
    Text: FSYC160D, FSYC160R Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs juiy 1998 Features Description • 70A, 100V, ros ON = 0-022Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s


    OCR Scan     		PDF FSYC160D, FSYC160R 0-022Q 36MeV/mg/cm2