FT5753M DARLINGTON TRANSISTOR ARRAY Search Results

FT5753M DARLINGTON TRANSISTOR ARRAY Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

FT5753M DARLINGTON TRANSISTOR ARRAY Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FT5753M Abstract: FT5756M FT5753 ft5753m DARLINGTON TRANSISTOR ARRAY ft575 T-43-25 Fujitsu Silicon Darlington Transistor Array Text: FUJITSU MI CR OELECTRON ICS 31E » E3 0Qlbbb2 T Q F M I T '-'iZ 'O .s r January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE^ FT5753M, FT5756M Silicon Darlington Transistor Array ABSOLUTE MAXIMUM RATINGS Ta » 25° C Symbol Rating Storage Temperature T «9 Junction Temperature	OCR Scan	PDF	FT5753M, FT5756M T-43-25 c/500 FT5753M FT5756M FT5753 ft5753m DARLINGTON TRANSISTOR ARRAY ft575 T-43-25 Fujitsu Silicon Darlington Transistor Array
FT5769M Abstract: NPN 337 FT5764M FT5755M FT5753M FT5756M ft5760m PNP DARLINGTON ARRAYS FT5754 FT5754M Text: Section 3 Darlington Transistor Arrays — A t a Glance Maximum Ratings V c e o V lc(A> Pag« D v lC C aa«(n«) Polarity 3 -9 FT5753M FT5756M R M -£ 5 NPN NPN 100 100 ±1.5 ±1-5 3-11 FT5754M FT5757M R M -6 5 NPN NPN 100 100 ±3 ±3 3-13 FT5755M FT5750M	OCR Scan	PDF	FT5753M FT5756M FT5754M FT5757M FT5755M FT5750M FT5759M FT5760M FT5761M FT5763M FT5769M NPN 337 FT5764M PNP DARLINGTON ARRAYS FT5754
FT5753M Abstract: ft5753m DARLINGTON TRANSISTOR ARRAY FT5756M FT5753 Fujitsu Silicon Darlington Transistor Array Text: January 1990 Edition 1.1 FT5753M, FT5756M FUJITSU - P R O D U C T P R O F IL E Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS _ R a tin g Ta = 2 5 °C S ym bol S to ra g e T e m p e ra tu re C o n d itio n T *9 J u n c tio n T e m p e ra tu re	OCR Scan	PDF	FT5753M, FT5756M FT5753M ft5753m DARLINGTON TRANSISTOR ARRAY FT5756M FT5753 Fujitsu Silicon Darlington Transistor Array
FT5753M Abstract: FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M Text: Darlington Transistor Arrays Power Transistor Products INTRODUCTION D A R L IN G T O N T R A N S IS T O R A R R A Y S E R IE S Description This series is Silicon D arlington Transistor Arrays. Each array consists o f 4-D arlin gton Transistors. T h e array is packaged in a small plastic 12-pin single in-line package w ith or	OCR Scan	PDF	12-pin FT5753M FT5754M FT5764M FT5778M ft5769m FT5754M Pin FT5758M FT5755M d5 transistor npn FT5763M