DC TO 20GHZ RF AMPLIFIER MMIC
Abstract: fujitsu power amplifier GHz MMIC AMPLIFIER 6-20 GHZ
Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC
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FMM5815X
5-20GHz
31dBm
FMM5815X
the17
FCSI0601M200
DC TO 20GHZ RF AMPLIFIER MMIC
fujitsu power amplifier GHz
MMIC AMPLIFIER 6-20 GHZ
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Untitled
Abstract: No abstract text available
Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC
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FMM5815X
5-20GHz
31dBm
FMM5815X
the17
FCSI0601M200
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FMM5805X
Abstract: No abstract text available
Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC
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FMM5805X
5-20GHz
FMM5805X
the17
FCSI0699M200
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584 MMIC
Abstract: fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic
Text: FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5803X
30dBm
FMM5803X
FCSI0200M200
584 MMIC
fujitsu power amplifier GHz
fujitsu x band amplifiers
power amplifier mmic
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PDF
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fujitsu power amplifier GHz
Abstract: FMM5805
Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC
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FMM5805X
5-20GHz
FMM5805X
the17
FCSI0699M200
fujitsu power amplifier GHz
FMM5805
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PDF
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Untitled
Abstract: No abstract text available
Text: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC
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FMM5815X
5-20GHz
31dBm
FMM5815X
the17
FCSI0601M200
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PDF
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0 281 002 924
Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5806X
26dBm
FMM5806X
FCSI0699M200
0 281 002 924
8 F 804
FUJITSU SEMICONDUCTOR phemt
power amplifier mmic
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PDF
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Untitled
Abstract: No abstract text available
Text: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC
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FMM5805X
5-20GHz
FMM5805X
the17
FCSI0699M200
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PDF
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fujitsu power amplifier GHz
Abstract: No abstract text available
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5806X
26dBm
FMM5806X
FCSI0699M200
fujitsu power amplifier GHz
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PDF
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fujitsu power amplifier GHz
Abstract: FMM5807X FUJITSU SEMICONDUCTOR phemt
Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5807X
21-27GHz
30dBm
FMM5807X
21-27GHz
FCSI0500M200
fujitsu power amplifier GHz
FUJITSU SEMICONDUCTOR phemt
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PDF
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fujitsu power amplifier GHz
Abstract: UM 2200 power amplifier mmic
Text: FMM5807X 21-27GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 21-27 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5807X
21-27GHz
30dBm
FMM5807X
21-27GHz
FCSI0500M200
fujitsu power amplifier GHz
UM 2200
power amplifier mmic
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PDF
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FUJITSU SEMICONDUCTOR phemt
Abstract: mmic case styles power amplifier mmic
Text: FMM5815GJ-1 17.7-19.7GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 20dB (Typ.) High PAE: ηadd = 25% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815GJ is a packaged, high-gain, high linearity,
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FMM5815GJ-1
31dBm
FMM5815GJ
the17
FCSI0402M200
FUJITSU SEMICONDUCTOR phemt
mmic case styles
power amplifier mmic
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PDF
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FUJITSU SEMICONDUCTOR phemt
Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
Text: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5806X
26dBm
FMM5806X
FCSI0699M200
FUJITSU SEMICONDUCTOR phemt
fujitsu power amplifier GHz
power amplifier mmic
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PDF
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fujitsu power amplifier GHz
Abstract: power amplifier mmic
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5802X
FMM5802X
FCSI0599M200
fujitsu power amplifier GHz
power amplifier mmic
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FMM5811GJ-1
Abstract: FMM5811 power amplifier mmic
Text: FMM5811GJ-1 17.7-23.6GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 24.5dBm Typ. High Gain: G1dB = 15dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 17.7-23.6GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology
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FMM5811GJ-1
FMM5811GJ-1
FCSI0101M200
FMM5811
power amplifier mmic
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FMM5804X
Abstract: fujitsu power amplifier GHz
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology
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FMM5804X
FMM5804X
FCSI0599M200
fujitsu power amplifier GHz
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siliconix vmp4
Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
Text: Class-E RF Power Amplifiers Come learn about this highly efficient and widespread class of amplifiers. Here are principles of operation, improved design equations, optimization principles and experimental results. By Nathan O. Sokal, WA1HQC of Design Automation, Inc
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99CH36282C.
KE67VWU,
siliconix vmp4
irf540 27.12 MHz
Siemens MTT 95 A 12 N
class e power amplifier
IRF510 SEC
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
IRF540 mosfet with maximum VDS 30 V
VMP4
Class E amplifier
IRF510 SEC mosfet
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Ericsson 600 rt dish
Abstract: telephone drop-wire Ericsson microwave dish qualcomm 801 c-band microwave transmitter philips pe 2480 Ericsson microwave commissioning SIEMENS MICROWAVE RADIO mesfet lnb Nokia SAT 820 S
Text: t r o p e R A n n u a l 1 9 9 7 RF MICROWAVE SOLUTIONS FOR THE WORLD OF DIGITAL COMMUNICATIONS C O R P O R A T E P R O F I L E Founded in 1985, ANADIGICS, Inc. is wireless, fiber optic and video com- a pioneer and a leading supplier munications components and sys-
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SIEMENS MICROWAVE RADIO
Abstract: mesfet lnb raytheon downconverter Ericsson microwave commissioning ESP car stability LED light chase raytheon dbs Nortel Networks Power Amplifier MMIC 2.6 GHz 10 gb laser diode
Text: RFIC Solutions for Broadband and Wireless Communications 010101010101101\\
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Avago 9886
Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
Text: M O DE L I T HI CS EXEMPLAR LIBRARY LIBRARY USER MANUAL V11 For Agilent Technologies Advanced Design System MODELITHICS EXEMPLAR LIBRARY CONTENTS CONTENTS . 2 INSTALLATION INSTRUCTIONS . 8
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com/peixun/antenna/116
//shop36920890
Avago 9886
XFRV
NE3210
FR4 substrate height and thickness rogers
fll120
SKD-ONS-ST23-001
BFP949
Rohm Diodes
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PDF
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PIC16F72 inverter ups
Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read
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element-14
element14.
element14,
PIC16F72 inverter ups
UPS inverter PIC16F72
PIC16F676 inverter hex code
16F877 with sd-card and lcd project
circuit diagram wireless spy camera
NH82801GB
xmega-a4
online ups service manual back-ups ES 500
ARM LPC2148 INTERFACING WITH RFID circuit diagram
realtek rtd 1186
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PDF
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Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM
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CY8C38
CY8C29
incl795
12T9797
12T9804
12T9803
12T9800
12T9802
12T9801
12T9805
Arduino Mega2560
13001 S 6D TRANSISTOR
arduino uno rev 3
agilent optical encoder 9988
MZ 13001 TRANSISTOR
arduino mega 2650
skiip 613 gb 123 ct
arduino sound sensor module pic
arduino nano
mc34063l
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PDF
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cq 949
Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Text: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz
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FMM5802X
FMM5802X
FCSI0599M200
cq 949
fujitsu power amplifier GHz
fujitsu phemt
FUJITSU RF 053
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PDF
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Untitled
Abstract: No abstract text available
Text: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1
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OCR Scan
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FMM5804X
FCSI0599M200
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PDF
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