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    MG30H1BL1

    Abstract: s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1
    Text: BIPOLAR DARLINGTON I 400-600V # : NON IS OI .A TF R T Y P E T O - 3 P I . * : UNDKR D E V E L O P M E N T BIPOLAR DARLINGTON II (10 00 -1400V) * : UNDER D EVELOPM ENT MOS FET MODULE MATRIX S : NON ISOLATED TY PE * : UNDER DEVELOPM ENT IGBT MODULE MATRIX


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    PDF 00-600V) -1400V) GT8N101 GT8Q101* GT25H101P MG25H1BS1 GT25JI01 GT50G102* MG50H1BS1 GT50J101 MG30H1BL1 s3885 MG100H2ZS1 MG100g2ys1 MG100N2YS1 MP6502 MG150J2YS1 MP6101 MG25Q6ES1 MG15J6ES1

    MG100H2CK1

    Abstract: mg100h2ck MG100H2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE G100H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE=200 Min. (IC=100A) . Low Saturation Voltage: VcE(sat)= 2 .5V(Max.)


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    PDF MG100H2CK1 G100H2CK1 MG100H2CK1 mg100h2ck MG100H2