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    G15N60HS

    Abstract: G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535
    Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGB15N60HS P-TO-263-3-2 O-263AB) G15N60HS Q67040-S4ces. G15N60HS G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535

    G15N60HS

    Abstract: G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2
    Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60HS G15N60HS G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2

    G15N60HS

    Abstract: G15N60H
    Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability


    Original     		PDF SGB15N60HS PG-TO-263-3-2 O-263AB) G15N60ces. G15N60HS G15N60H