G15N60HS
Abstract: G15N60 SGB15N60HS G15N60H MARKING CODE SMD IC s4535 Q67040-S4535
Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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SGB15N60HS
P-TO-263-3-2
O-263AB)
G15N60HS
Q67040-S4ces.
G15N60HS
G15N60
SGB15N60HS
G15N60H
MARKING CODE SMD IC
s4535
Q67040-S4535
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G15N60HS
Abstract: G15N60 SGB15N60HS G15N60H PG-TO-263-3-2 PG-TO263-3-2
Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
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PDF
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SGB15N60HS
PG-TO-263-3-2
O-263AB)
G15N60HS
G15N60HS
G15N60
SGB15N60HS
G15N60H
PG-TO-263-3-2
PG-TO263-3-2
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G15N60HS
Abstract: G15N60H
Text: SGB15N60HS ^ High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability
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Original
|
PDF
|
SGB15N60HS
PG-TO-263-3-2
O-263AB)
G15N60ces.
G15N60HS
G15N60H
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