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    G20N60B3 Search Results

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    G20N60B3 Price and Stock

    Rochester Electronics LLC HGTG20N60B3

    N-CHANNEL IGBT
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    DigiKey HGTG20N60B3 Tube 84
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    onsemi HGTG20N60B3

    IGBT 600V 40A 165W TO247
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    DigiKey HGTG20N60B3 Tube
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    Avnet Americas HGTG20N60B3 Tube 0 Weeks, 2 Days 233
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    Rochester Electronics HGTG20N60B3 11,700 1
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    Avnet Silica HGTG20N60B3 53 Weeks 30
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    Flip Electronics HGTG20N60B3 2,700
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    Flip Electronics HGTG20N60B3

    IGBT 600V 40A TO247-3
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    DigiKey HGTG20N60B3 Tube 200
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    onsemi HGTG20N60B3D

    IGBT 600V 40A TO247-3
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    DigiKey HGTG20N60B3D Tube 450
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    Rochester Electronics HGTG20N60B3D 1
    • 1 $3.73
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    Rochester Electronics LLC HGTG20N60B3-FS

    IGBT, 40A, 600V, N-CHANNEL, TO-2
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    DigiKey HGTG20N60B3-FS Bulk 84
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    G20N60B3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    G20N60B3D Fairchild Semiconductor 40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Original PDF

    G20N60B3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G20N60B3D

    Abstract: G20N60B hg*20n60 Hgtg20n60
    Text: G20N60B3D S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D G20N60B3D G20N60B hg*20n60 Hgtg20n60

    HG20N60B3

    Abstract: hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B
    Text: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs November 1997 Features Description • 40A, 600V at TC = 25oC The HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a


    Original     		PDF HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. TA49050. 1-800-4-HARRIS HG20N60B3 hG20N60 G20N60B3 hg20n60b3 equivalent HG20N60B

    G20N60B3

    Abstract: G20N60 HGTG20N60B3 G20N60B HGTP20N60B3 LD26 RHRP3060 hg*20n60
    Text: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT February 1996 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = +25oC Square Switching SOA Capability Typical Fall Time - 140ns at +150oC


    Original     		PDF HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 G20N60 G20N60B LD26 RHRP3060 hg*20n60

    G20N60B3D

    Abstract: BVces HGTG20N60B3D LD26 RHRP3060 igbt 600V 45UH
    Text: S E M I C O N D U C T O R G20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1996 Features Package • 40A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150oC E C • Short Circuit Rated


    Original     		PDF HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. RHRP3060 1-800-4-HARRIS G20N60B3D BVces LD26 igbt 600V 45UH

    G20N60B3

    Abstract: MOSFET 40A 600V HGTG20N60B3 HGTP20N60B3 LD26 RHRP3060 TA49050
    Text: HGTP20N60B3, G20N60B3 S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBTs January 1997 Features • • • • • Package JEDEC TO-220AB COLLECTOR EMITTER 40A, 600V at TC = 25oC 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . . . . . . . 140ns at 150oC


    Original     		PDF HGTP20N60B3, HGTG20N60B3 O-220AB 140ns 150oC O-247 HGTP20N60B3 HGTG20N60B3 1-800-4-HARRIS G20N60B3 MOSFET 40A 600V LD26 RHRP3060 TA49050

    IGBTs

    Abstract: G20N60B3D g20n60 G20N60B HGTG20N60B3D LD26 RHRP3060
    Text: G20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC IGBTs G20N60B3D g20n60 G20N60B LD26 RHRP3060

    HG20N60B3

    Abstract: G20N60B3 hG20N60 HGT1S20N60B3S9A hg20n60b3 equivalent g20n60 HGTG20N60B3 MOSFET 40A 600V HGT1S20N60B3S HGTP20N60B3
    Text: HGT1S20N60B3S, HGTP20N60B3, G20N60B3 Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    Original     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. HG20N60B3 G20N60B3 hG20N60 HGT1S20N60B3S9A hg20n60b3 equivalent g20n60 MOSFET 40A 600V HGT1S20N60B3S

    g20n60b3d

    Abstract: HGTG20N60B3D MOSFET 40A 600V LD26 RHRP3060
    Text: S E M I C O N D U C T O R G20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 40A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . . . . . . . . . . 140ns at 150oC


    Original     		PDF HGTG20N60B3D O-247 140ns 150oC HGTG20N60B3D 150oC. g20n60b3d MOSFET 40A 600V LD26 RHRP3060

    G20N60B3D

    Abstract: No abstract text available
    Text: G20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC G20N60B3D

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    HGTG20N60B3

    Abstract: HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 G20N60B g20n60 hg*20n60 hg20n
    Text: HGT1S20N60B3S, HGTP20N60B3, G20N60B3 Data Sheet January 2000 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    Original     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 G20N60B g20n60 hg*20n60 hg20n

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent g20n60b3 HG20N hg*20n60 TA49050 g20n60 MOSFET 40A 600V HGTG20N60B3
    Text: HGT1S20N60B3S, HGTP20N60B3, G20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs Features The HGT1S20N60B3S, the HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    Original     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 150oC. HG20N60B3 hG20N60 hg20n60b3 equivalent g20n60b3 HG20N hg*20n60 TA49050 g20n60 MOSFET 40A 600V

    g20n60b3d

    Abstract: G20N60 HGTG20N60B3D LD26 RHRP3060 TA49016
    Text: G20N60B3D Data Sheet January 2000 File Number 3739.6 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Features The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. 140ns 150oC g20n60b3d G20N60 LD26 RHRP3060 TA49016

    G20N60B3D

    Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3
    Text: G20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The G20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D LD26 RHRP3060 G20N60B3

    HG20N60B3

    Abstract: hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d HGTG20N60B3 G20N60B
    Text: interrii HGT1S20N60B3S, HGTP20N60B3, G20N60B3 J a n u a ry . m Data Sheet 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the G20N60B3 are Generation III MOS gated high voltage switching devices combining the best features of MOSFETs


    OCR Scan     		PDF HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 HGTP20N60B3 HGTG20N60B3 HG20N60B3 hG20N60 hg20n60b3 equivalent HG20N60B G20N60B3 hg*20n60 g20n60 vqe 24 d G20N60B

    G20N60B3D

    Abstract: TA49016 G20N60B3 transistor C110 C110 HGTG20N60B3D LD26 RHRP3060 hgtg20n
    Text: G20N60B3D interrii J a n u a ry . m D ata S h eet 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The G20N60B3D is a MOS gated high voltage switching device com bining the best features of MOSFETs and bipolar transistors. The device has the high input


    OCR Scan     		PDF HGTG20N60B3D HGTG20N60B3D RHRP3060. TA49016. G20N60B3D TA49016 G20N60B3 transistor C110 C110 LD26 RHRP3060 hgtg20n

    transistor TE 901 equivalent

    Abstract: bd 743 transistor
    Text: HGTP20N60B3 f f t H A R R IS U V S E M I C O N D U C T O R 40A, 600V, UFS Series N-Channel IGBT Features 40A, 600V at T c = +25°C Square Switching SOA Capability Typical Fall Tim e - 140ns at +150°C Short Circuit Rated Low Conduction Loss Description The HGTP20N60B3 is a MOS gated high voltage switching


    OCR Scan     		PDF HGTP20N60B3 140ns HGTP20N60B3 transistor TE 901 equivalent bd 743 transistor

    PJ 969 diode

    Abstract: TA49050 pj 809 pj 986 diode
    Text: S E M I C O N D U C HGTP20N60B3 it: March1995 40A, 600V, UFS Series N-Channel IGBT Features Package • 40A, 600V at Tc = +25°C JEDEC TO-220AB • Square Switching SOA Capability • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss


    OCR Scan     		PDF HGTP20N60B3 O-220AB 140ns HGTP20N60B3 PJ 969 diode TA49050 pj 809 pj 986 diode