G4j rf
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
|
Original
|
PG2214TB
PG2214TB
G4j rf
|
PDF
|
HS350
Abstract: UPG2214TB UPG2214TB-A UPG2214TB-E4-A VP215
Text: NEC's ½W LOW VOLTAGE UPG2214TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 1.8 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG2214TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phones and other
|
Original
|
UPG2214TB
UPG2214TB
HS350
HS350
UPG2214TB-A
UPG2214TB-E4-A
VP215
|
PDF
|
2012 NEC
Abstract: HS350 VP215 G4j rf
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
|
Original
|
PG2214TB
PG2214TB
2012 NEC
HS350
VP215
G4j rf
|
PDF
|
G4J 6 lead
Abstract: upg2214tb G4j rf SW SPDT 6pin UPG2214TB-E4-A NEC HS350 UPG2214TB-A UPG2214TB-E4-A VP215
Text: NEC's ½W LOW VOLTAGE UPG2214TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 1.8 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG2214TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phones and other
|
Original
|
UPG2214TB
UPG2214TB
G4J 6 lead
G4j rf
SW SPDT 6pin
UPG2214TB-E4-A NEC
HS350
UPG2214TB-A
UPG2214TB-E4-A
VP215
|
PDF
|
G4j rf
Abstract: No abstract text available
Text: A Business Partner of Renesas Electronics Corporation. Preliminary PG2214TB GaAs Integrated Circuit for L, S-Band SPDT Switch Data Sheet R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 DESCRIPTION The μPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for
|
Original
|
PG2214TB
R09DS0050EJ0400
PG2214TB
G4j rf
|
PDF
|
PG2214TB
Abstract: No abstract text available
Text: Preliminary Data Sheet PG2214TB GaAs Integrated Circuit for L, S-Band SPDT Switch R09DS0050EJ0400 Rev.4.00 Sep 10, 2012 DESCRIPTION The μPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application.
|
Original
|
PG2214TB
R09DS0050EJ0400
PG2214TB
|
PDF
|
G4j rf
Abstract: SW SPDT 6pin HS350 VP215 UPG2214Tb
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
|
Original
|
PG2214TB
PG2214TB
G4j rf
SW SPDT 6pin
HS350
VP215
UPG2214Tb
|
PDF
|
G4j rf
Abstract: 2012 NEC HS350 VP215 PG10477EJ03V0DS
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The µPG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from
|
Original
|
PG2214TB
PG2214TB
|
PDF
|
HS350
Abstract: VP215 UPG2214TB G4j rf
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
PG2214TB
Vcon120180
IR260
VP215
WS260
HS350
PG10477JJ03V0DS
HS350
VP215
UPG2214TB
G4j rf
|
PDF
|
UPG2214TB-E4-A NEC
Abstract: UPG2214TB-E4-A UPG2214TB-A HS350 UPG2214TB VP215
Text: NEC's ½W LOW VOLTAGE UPG2214TB L, S-BAND SPDT SWITCH FEATURES DESCRIPTION • SWITCH CONTROL VOLTAGE: Vcont H = 1.8 to 5.3 V (3.0 V TYP.) Vcont (L) = −0.2 to +0.2 V (0 V TYP.) NEC's UPG2214TB is a GaAs MMIC L, S-band SPDT (Single Pole Double Throw) switch for mobile phones and other
|
Original
|
UPG2214TB
UPG2214TB
HS350
UPG2214TB-E4-A NEC
UPG2214TB-E4-A
UPG2214TB-A
HS350
VP215
|
PDF
|
PG2214TB
Abstract: No abstract text available
Text: GaAs INTEGRATED CIRCUIT PG2214TB L, S-BAND SPDT SWITCH DESCRIPTION The PG2214TB is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency
|
Original
|
PG2214TB
PG2214TB
PG10477EJ03V0DS
|
PDF
|
FET marking code g5d
Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .
|
Original
|
R09CL0001EJ0100
PX10727EJ02V0PF)
FET marking code g5d
PG2179TB
marking code C3E SOT-89
marking code C1E mmic
marking code C1G mmic
2SC3357/NE85634
PG2163T5N
sot-23 g6g
PC8230TU
marking code C1H mmic
|
PDF
|
EQUIVALENT BYD33D
Abstract: 1n5062 equivalent SUF5402 diode cross reference BYS21-45 BYS21-45 1N4007 general instruments BY255 itt da3/1000 1N6644 FR207 equivalent
Text: DISCRETE SEMICONDUCTORS Cross reference guide Power Diodes 1998 Dec 07 Philips Semiconductors Power Diodes Cross reference guide “Philips Type” refers to closest Philips alternative or direct equivalent if available. Always consider the application and
|
Original
|
PBYR3045WT
BYD73D
CTB34M
BYD73G
SB1035
PBYR1040
1N5059
SB1040
EQUIVALENT BYD33D
1n5062 equivalent
SUF5402
diode cross reference BYS21-45
BYS21-45
1N4007 general instruments
BY255 itt
da3/1000
1N6644
FR207 equivalent
|
PDF
|
|
|
nec mosfet marked v75
Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
|
Original
|
G0706
PX10727EJ02V0PF
nec mosfet marked v75
NEC Ga FET marking code T79
FET marking code g5d
marking code C1G mmic
LGA 1155 PIN diagram
PB1507
marking code C1E mmic
marking code C1H mmic
PC8230TU
MMIC SOT 363 marking CODE 77
|
PDF
|
shindengen mr5060
Abstract: TFK 601 TFK 602 18db6a 18DB8A 18DB2A Philips BZV85C-22 data sheet bzx85c MOTOROLA BYD74G UR1M
Text: Cross Reference Competitor Part Number Competitor FAGOR Part Number Competitor Part Number Competitor FAGOR Part Number 1.5KA10 1.5KA10A 1.5KA11 1.5KA11A 1.5KA12 1.5KA12A 1.5KA13 1.5KA13A 1.5KA15 1.5KA15A 1.5KA16 1.5KA16A 1.5KA18 1.5KA18A 1.5KA20 1.5KA20A
|
Original
|
5KA10
5KA10A
5KA11
5KA11A
5KA12
5KA12A
5KA13
5KA13A
5KA15
5KA15A
shindengen mr5060
TFK 601
TFK 602
18db6a
18DB8A
18DB2A
Philips BZV85C-22 data sheet
bzx85c MOTOROLA
BYD74G
UR1M
|
PDF
|
1n5399 equivalent
Abstract: MP606J gp25d GP15K equivalent ns8kt equivalent GP25M GP25J GL348 G4J equivalent 1N5398 equivalent
Text: S T A N D A R D R E C T IF IE R S lo{A 0.5 0.8 CASE TYPE DO-213AA DO-204AL MP606 MINI-MELF I Vrrm VOLTS) 50 6L34A MPG06A# 100 GL348 MPG06B# 200 SÌ340 MPG06D# 6L34G MPG06G# GL34J MP606J# 300 400 500 600 700 800 MPG06K# 1000 MPG06M# 1100-1600 SURGE (A) 1Ö.0
|
OCR Scan
|
DO-213AA
DO-204AL
MP606
6L34A
GL348
MPG06A#
MPG06B#
MPG06D#
MPG06K#
6L34G
1n5399 equivalent
MP606J
gp25d
GP15K equivalent
ns8kt equivalent
GP25M
GP25J
GL348
G4J equivalent
1N5398 equivalent
|
PDF
|
eto thyristor
Abstract: Ericsson 4222 ERICSSON BML OA 10 diode
Text: ERICSSON ^ May 1997 PBL 3860A/1, PBL 3860A/6 Subscriber Line Interface Circuit Description Key Features Note: All data is also valid for PBL 3860A/6, except maximum ratings for battery voltage. See next page The PBL 3860A/1 Subscriber Line Interface Circuit (SLIC) is a bipolar integrated
|
OCR Scan
|
860A/1,
860A/6
860A/6,
860A/1
PBL3860A/1QN
PBL3860A/6QN
eto thyristor
Ericsson 4222
ERICSSON BML
OA 10 diode
|
PDF
|
n4448
Abstract: 1N4448F
Text: ERICSSON ^ October 1998 PBL 386 40/1 Subscriber Line Interface Circuit Description Key Features The PBL 386 40/1 Subscriber Line Interface Circuit SLIC is a 90 V bipolar integrated circuit for use in Digital Loop Carrier, FITL and other telecommunications equipment.
|
OCR Scan
|
2x900
1522-PBL
S-164
n4448
1N4448F
|
PDF
|
gq-01 receiver
Abstract: 7788D RSN 3501 AM7905 NGC 8200
Text: DEI 0 2 5 7 5 H 7 005475!□ 2 | ~ 88D 24756 D ADV MICRO {TELECOM! ññ 0257527 ADV MICRO TELECOM A m 7 5 3 / A m 7 9 5 7 r^ v / - 1 7 Subscriber Line Interface Circuit ADVANCE INFORMATION DISTINCTIVE CHARACTERISTICS Programmable constant current (Am 7953), or constant
|
OCR Scan
|
Am7957)
AIS-WCP-10M-05/87-0
gq-01 receiver
7788D
RSN 3501
AM7905
NGC 8200
|
PDF
|
eto thyristor
Abstract: ERICSSON rax card substitu bipolar transistors diode sg 5 ts
Text: ERICSSON ^ May 1997 PBL 3766, PBL 3766/6 Subscriber Line Interface Circuit Description Key Features The PBL 3766 Subscriber Line Interface Circuit SLIC is a monolithic integrated circuit, manufactured in 75 V bipolar technology. The PBL 3766 SLIC facilitates the
|
OCR Scan
|
1522-PBL
S-164
eto thyristor
ERICSSON rax card
substitu bipolar transistors
diode sg 5 ts
|
PDF
|
k 3767
Abstract: ZY1000 22000 microfarad capacitor Ericsson GM 22 cnc feed drive PBL3767 Ericsson GM
Text: ERICSSON ^ October 1998 PBL 3767, PBL 3767/6 Subscriber Line Interface Circuit Description Key Features The PBL 3767 Subscriber Line Interface Circuit SLIC is a monolithic integrated circuit, manufactured in 75 V bipolar technology. The PBL 3767 SLIC facilitates the
|
OCR Scan
|
1522-PBL
S-164
k 3767
ZY1000
22000 microfarad capacitor
Ericsson GM 22
cnc feed drive
PBL3767
Ericsson GM
|
PDF
|
suzuki DT4
Abstract: R300F txc 7a CR20 CR21 cdr 03a selt 400 27
Text: M13E Device DS3/DS1 MUX/DEMUX, Extended Features TXC-03303 DATA SHEET FEATURES DESCRIPTION Multiplexes/demultiplexes 28 DS 1 signals to/from a DS3 signal. M13 or C-bit parity mode operation FEBE, C, or P-bit parity error insertion capability DS3 idle signal generators
|
OCR Scan
|
TXC-03303
208-tion
TXC-03303-MB
suzuki DT4
R300F
txc 7a
CR20
CR21
cdr 03a
selt 400 27
|
PDF
|
IN5363B
Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
Text: Cross Reference Every care has b een taken in compiling this cross referen ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any
|
OCR Scan
|
03NH45
05NH46
05NU41
05NU42
0R8GU41
5KE10
5KE10Û
5KE100A
5KE100CA
5KE10CCF
IN5363B
IN5361B
P6KEI5CA
IN5956B
TFK S 417 T
IM200Z
in5349b
IN5384B
in5366b
P6KEI5A
|
PDF
|
