FP50R12KT4_B11
Abstract: FP50R12KT4
Text: Technische Information / technical information FP50R12KT4_B11 IGBT-Module IGBT-modules EconoPIM 2 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™2 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter
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FP50R12KT4
FP50R12KT4_B11
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FP100R12KT4
Abstract: 2f k
Text: Technische Information / technical information FP100R12KT4_B11 IGBT-Module IGBT-modules EconoPIM 3 Modul PressFIT mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™3 module PressFIT with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter
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FP100R12KT4
2f k
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FP50R12KT4
Abstract: No abstract text available
Text: Technische Information / technical information FP50R12KT4 IGBT-Module IGBT-modules EconoPIM 2 Modul mit Trench/Feldstopp IGBT4 und EmCon4 Diode EconoPIM™2 module with trench/fieldstop IGBT4 and EmCon4 diode IGBT-Wechselrichter / IGBT-inverter Vorläufige Daten / preliminary data
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FP50R12KT4
FP50R12KT4
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Triangle Microwave Digital Attenuator
Abstract: Triangle Microwave GA GT atten KDI attenuator MCE OR KDI pin diode attenuator GT-50 GT attenuator voltage controlled KDI triangle 2-gt attenuator
Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25–18 G H z GENERAL INFORM TION A KDI/Triangle Pin Diode attenuators continuously change the amplitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Model type selected. The basic current controlled models do not have thermal compensation included, the voltage
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Triangle Microwave Digital Attenuator
Abstract: KDI attenuator Cannon connectors GT atten Triangle Microwave GA Triangle Microwave attenuator GT attenuator voltage controlled ITT Cannon GT-50 Attenuators
Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25–18 G H z GENERAL INFORM TION A KDI/Triangle Pin Diode attenuators continuously change the amplitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the Model type selected. The basic current controlled models do not have thermal compensation included, the voltage
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water cooled Chiller
Abstract: SMA905 LDD60-5 2 Wavelength Laser Diode ga 39 diode LEMO PT100 temperature sensor water SMA905 connector LIMO80-F400-DL976-T2C1M0P0F36 PT100 application note
Text: LIMO FP Series pump HIGH-POWER DIODE LASER • • • • • Optical data High brightness laser for pump applications Hermetically sealed laser head in potential-free housing SMA905 Plug & Play connector for optical fibres Compact dimensions Dual temperature sensor (NTC/PT100)
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SMA905
NTC/PT100)
SMA905
water cooled Chiller
LDD60-5
2 Wavelength Laser Diode
ga 39 diode
LEMO
PT100 temperature sensor water
SMA905 connector
LIMO80-F400-DL976-T2C1M0P0F36
PT100 application note
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water cooled Chiller
Abstract: SMA905 SMA905 connector LEMO 2 Wavelength Laser Diode 940-975 laser diode 635 nm laser diode lifetime Laser Head PT100 temperature sensor water
Text: LIMO AV5 Series pump HIGH-POWER DIODE LASER • • • • • Optical data High brightness laser for pump applications Hermetically sealed laser head in potential-free housing SMA905 / LD80 Plug & Play connector for optical fibres Compact dimensions Dual temperature sensor (NTC/PT100)
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SMA905
NTC/PT100)
SMA905
water cooled Chiller
SMA905 connector
LEMO
2 Wavelength Laser Diode
940-975
laser diode 635 nm
laser diode lifetime
Laser Head
PT100 temperature sensor water
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XTHI53BF860
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRA-RED EMITTING SUN LED DIODE Email : [email protected] Web Site : www.sunled.com XTHI53BF860 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C)
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XTHI53BF860
1/100Duty
XDSA2685
THI/860
XTHI53BF860
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XTHI53W860
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRA-RED EMITTING SUN LED DIODE Email : [email protected] Web Site : www.sunled.com XTHI53W860 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C)
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XTHI53W860
1/100Duty
XDSA2684
THI/860
XTHI53W860
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XTHI53W850
Abstract: 850 nm LED 53w8
Text: T-1 3/4 5mm INFRA-RED EMITTING SUN LED DIODE Email : [email protected] Web Site : www.sunled.com XTHI53W850 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C)
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XTHI53W850
1/100Duty
XDSA2686
THI/850
XTHI53W850
850 nm LED
53w8
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XTHI53BF850
Abstract: No abstract text available
Text: T-1 3/4 5mm INFRA-RED EMITTING SUN LED DIODE Email : [email protected] Web Site : www.sunled.com XTHI53BF850 Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. Absolute maximum ratings (TA=25°C)
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XTHI53BF850
1/100Duty
XDSA2687
THI/850
XTHI53BF850
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IRF7901D1
Abstract: No abstract text available
Text: PD - 93844 IRF7901D1 PROVISIONAL DATASHEET Dual FETKYTM • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc converters up to 5A peak output • Low Conduction Losses • Low Switching Losses • Low VF Schottky Rectifier
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IRF7901D1
IRF7901D1
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6sq7gt
Abstract: 6Sq7 bk500 6SQ7GT tube triode IT 9-1 h 48 diode audio envelope detector diode 6sq7 tube ga 39 diode 6sq7-GT
Text: 6SQ7.6SQ7GT ANY MOUNTING POSITION SMALL 8-PIN WAFER OCTAL SMALL WAFER 8 - P I N OCTAL METAL S L E E V E THE 6SQ7 AND 6SQ7GT COMBINE TWO DIODE U NITS AND A HIGH-MU TRIODE IN A SINGLE EN VELO PE. EACH S E C T IO N USES A COMMON CATHODE. IT IS INTENDED FOR S E R V IC E AS A COMBINED DETECTOR, AVC SOURCE, AND HIGH G A IN AUDIO
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12SQ7
Abstract: 12SQ7GT 12s07 12sq7 tube h 48 diode Scans-0017290
Text: I2SQ7,12SQ7GT TUNG'SOL DOUBLE-DIODE TRIODE 12SQ7 12SQ7GT ^ MAX -_ _I6 _ MAX. T-9 MT8 2f 2 tÉ MAXr 2"g" MAX. MAX. 3-5. 16 COATED UN I POTENTIAL CATHODE HEATER 12.6 VOLTS METAL SHELL 150 MA. — '1 6 - MAX AC OR DC GLASS BULB ANY MOUNTING POSITION iS jT T H i
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12SQ7GT
12SQ7
16-MAX
12SQ7
12SQ7GT
12S07A
12SQ76T8
12s07
12sq7 tube
h 48 diode
Scans-0017290
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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Triangle Microwave rr
Abstract: Triangle Microwave Digital Attenuator Triangle Microwave GA KDI attenuator MCE OR KDI pin diode attenuator KDI triangle 2-gt attenuator
Text: ATTENUATORS, PIN DIODE SERIES GT, 1GT, 2GT, GA 0.25-18 GHz GENERAL INFORMATION KDI/Triangle Pin Diode attenuators continuously change the am plitude of a microwave signal by applying a varying DC current, voltage, or digital signal, depending upon the M odel type selected. The basic current con
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SKM 300 GA 102 D
Abstract: si 13003 br hc 13003 ml 13003 skm300ga122d semikron diode 200a DDD3717 DDG371B GA102 SKM 300 CIRCUIT
Text: 013bb71 □□□3710 Iflfl * S E K G S1E D S EM IK R D N SEPIIKRON INC Absolute Maximum Ratings Symbol Values 102 D Conditions1> 1000 1200 1000 1200 300/200 600/400 ±20 1750 -5 5 . . .+150 2 500 Class F 55/150/56 VcES Rge = 20 k iî VCGR Ic Tease = 2 5 / 8 5 ° C
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13bb71
813bh71
DDD3717
39-3i
GA102
SKM 300 GA 102 D
si 13003 br
hc 13003
ml 13003
skm300ga122d
semikron diode 200a
DDG371B
SKM 300 CIRCUIT
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12AT6
Abstract: 6at6 6AT6-12AT6 12at6 diagram 6at6 tube T1447 tube 12AT6 12at6 tube ga 39 diode general electric
Text: 6AT6 12AT6 ET-T1447 Page 1 6AT6-12AT6 2-57 DUPLEX-DIODE TRIODE TUBES DESCRIPTION AND RATING The 6AT6 is a miniature, duplex-diode, high-mu triode designed for use as a combined detector, amplifier, and automatic-volume-control tube. Except for heater ratings, the 12AT6 is identical to the 6AT6.
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6AT6-12AT6
12AT6
ET-T1447
6at6
6AT6-12AT6
12at6 diagram
6at6 tube
T1447
tube 12AT6
12at6 tube
ga 39 diode
general electric
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N5935B
Abstract: 1N5926B 1N5927B 1N5928B 1N5929B 1N5930B 1N5956B zener 2J N5943
Text: TRANSYS 1N5926B THRU 1N5956B ELECTRONICS GLASS PASSIVATED JUNCTION SILICON ZENER DIODE LIMITED VOLTAGE - 11 TO 200 Volts Power - 1.5 W atts FEATURES DO-41 Low prof e package ¥- Built-in strain re ef I Glass passivated junction 1j0 Low inductance Typical lR less than 1 £gA above 11V
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1N5926B
1N5956B
DO-41
MIL-STD-750,
N5935B
1N5927B
1N5928B
1N5929B
1N5930B
1N5956B
zener 2J
N5943
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6fm8
Abstract: I960 h 48 diode rs tube
Text: TENTATIVE DATA 6FM8 TUNO-SOL DUPLEX-DIODE TRIODE M INIATURE TYPE V — 8 -A MAX. COATED UN I PO TEN TIA L CATHODE f" 1 , 15' 116 HEATER MAX. T-6^ 16 6 . 3 VO LTS MAX. 0 .4 5 AMP. AC OR DC ANY MOUNTING PO S ITIO N GLASS BULB BOTTOM VIEW S M A L L BUTT ON 9 PIN BASE
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3v100
Abstract: SKM 300 GA 102 D Ga 81 ga 39 diode
Text: se MIKRO n Absolute Maximum Ratings Sym bol Values . 102 D . 122 D Conditions 11 1000 1200 1000 1200 3 0 0 /2 0 0 6 0 0 /4 0 0 ±20 1750 - 5 5 . . .+150 2 500 V cES O CM II Tease — 2 5 /8 5 C Tease = 2 5 /8 5 °C ICM LU OC lc <3 VcGR V g es Ptot Tj, Tstg
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D 92 M - 03 DIODE
Abstract: Diode DH 582
Text: Vishay Telefunken Contents of a Diode in Sintered Glass Package SOD64 Leads, tinned 85.9% 58.2% copper 2 2 . 1 %iron 18.5% m olybdenum 0.5% tin 0 .2 % lead 0 . 1 % silver 0 . 1 % carbon 0 . 1 % oxygen Traces of Mn, P, S Package glass (13.8%) 42.0% PbO 38.0% SiO 2
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IGBT SKM 400 GA 122D SEMIKRON
Abstract: Si 122D semikron IGBT 150A 600v GA122 102D 122D V00E
Text: 013bb71 □□□3bcm S 1E D - . SEMIKRON INC Absolute Maximum Ratings Symbol Conditions ' Values . 1 0 2 D . 1 2 2 D Units 1000 1200 V 1000 1200 V V ces 20 kn V cgr Rge lc Tease = 2 5 /8 0 °C 2 0 0 /1 5 0 Ic m Tease = 2 5 /8 0 °C 4 0 0 /3 0 0
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13bb71
0DD37G1
T-39-31
SKM200
IGBT SKM 400 GA 122D SEMIKRON
Si 122D
semikron IGBT 150A 600v
GA122
102D
122D
V00E
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2SK574
Abstract: 4GHz-12
Text: "7^ -^U tii^tjg iiig ijU iM M d È S à ià im ìÌS S b È iÈ iiìÈ È iìS S ^ SONY COR P/C Oi lPO NE NT PRO DS •T.a ^ a j U M M M K S T? DE I f l 3 ñ 5 3 ñ 3 O D D O a S E S ro iñ s n a s 2SK574 GaAs N-channel MES FET O D e scrip tio n : The 2SK574 is a general purpose N-channel GaAs FET
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2SK574
2SK574
12GHz
4GHz-12
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