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    Vishay Semiconductors VS-GA100NA60UP

    IGBT MOD 600V 100A 250W SOT227
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    GA100NA60UP Datasheets Context Search

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    GA100NA60UP

    Abstract: No abstract text available
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 GA100NA60UP PDF

    application notes igbt induction heating

    Abstract: VS-GA100NA60UP
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    VS-GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 application notes igbt induction heating VS-GA100NA60UP PDF

    GA100NA60UP

    Abstract: ultrafast igbt information OF ic 7400
    Text: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    GA100NA60UP OT-227 18-Jul-08 GA100NA60UP ultrafast igbt information OF ic 7400 PDF

    TRANSISTOR TC 100

    Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    GA100NA60UP E78996 2002/95/EC OT-227 11-Mar-11 TRANSISTOR TC 100 GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf PDF

    application notes igbt induction heating

    Abstract: VS-GA100NA60UP
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    VS-GA100NA60UP E78996 2002/95/EC OT-227 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 application notes igbt induction heating VS-GA100NA60UP PDF

    VS-GA100NA60UP

    Abstract: No abstract text available
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    VS-GA100NA60UP E78996 OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA100NA60UP PDF

    VS-GA100NA60UP

    Abstract: No abstract text available
    Text: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    VS-GA100NA60UP E78996 2002/95/EC OT-227 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-GA100NA60UP PDF

    GA100NA60UP

    Abstract: No abstract text available
    Text: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses


    Original
    GA100NA60UP E78996 2002/95/EC OT-227 18-Jul-08 GA100NA60UP PDF

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original
    100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter PDF