ITT2110AH
Abstract: ITT2111AH ITT2112AH ITT211X ITTT2112AH
Text: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual
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ITT2110AH
ITT2111AH
ITT2112AH
ITT211X
ITT2112AH
ITT2110AH,
ITT2111AH)
ITTT2112AH
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Untitled
Abstract: No abstract text available
Text: 3.5V 3.3W RF Power Amplifier IC for GSM ITT2110AH / ITT2111AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual
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ITT2110AH
ITT2111AH
ITT2112AH
ITT211X
ITT2112AH
ITT2110AH,
ITT2111A240
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200w computer power supply Circuit diagram
Abstract: JRC 2355 FMM4023KE QFP44
Text: FMM4023KE 1.0625Gbps Port Bypass Circuit KE DESCRIPTION The FMM4023 is a quad port bypass circuit designed with 0.5µm GaAs MESFET technology for 1.0625Gbps Fibre Channel applications. Small Computer Systems Interface SCSI is the common interface medium for
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FMM4023KE
0625Gbps
FMM4023
QFP44
FCSI0997M200
200w computer power supply Circuit diagram
JRC 2355
FMM4023KE
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15 GHz high power amplifier
Abstract: No abstract text available
Text: 8W GaAs Power Amplifier 6.0 – 7.6 GHz ITT8402FM ADVANCED INFORMATION FEATURES • • • • • • • High Output Power: 10 Watts (6.5-7.5 GHz) High Linear Power (P1dB): 36.5 dBm typical High Power Added Efficiency: 25% typical at P1dB High Linear Gain: 20 dB typical
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ITT8402FM
8402FM
ITT8402FM
15 GHz high power amplifier
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Untitled
Abstract: No abstract text available
Text: 8W GaAs Power Amplifier 6.0 – 7.6 GHz ITT8402 ADVANCED INFORMATION FEATURES • • • • • • • High Output Power: 10 Watts (6.5-7.5 GHz) High Linear Power (P1dB): 36.5 dBm typical High Power Added Efficiency: 25% typical at P1dB High Linear Gain: 20 dB typical
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ITT8402
ITT8402
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Untitled
Abstract: No abstract text available
Text: 5W GaAs Power Amplifier 6.0 – 9.0 GHz ITT8401FM ADVANCED INFORMATION FEATURES • • • • • • • Broadband Performance High Linear Power (P1dB): 35 dBm typical High Power Added Efficiency: 30% typical at P1dB High Linear Gain: 20 dB typical 50 Ω Input/Output Impedance
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ITT8401FM
8401FM
ITT8401FM
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ITT6401FM
Abstract: No abstract text available
Text: 2W GaAs Power Amplifier 4.5 - 7.1 GHz ITT6401FM FEATURES • • • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical 50 Ω Input/Output Impedance
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ITT6401FM
6401FM
ITT6401FM
360mA
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2w,GaAs FET
Abstract: ITT6401D
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
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ITT6401D
ITT6401D
360mA
2w,GaAs FET
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ITT8504D
Abstract: No abstract text available
Text: 8W Power Amplifier Die 8.0 – 10.5 GHz ITT8504D ADVANCED INFORMATION Features • • • Broadband Performance 35% Typical Power Added Efficiency Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8504D is a three stage MMIC power
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ITT8504D
ITT8504D
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Untitled
Abstract: No abstract text available
Text: 12W Single-ended Power Amplifier Die 9.0 – 10.5 GHz ITT338512D ADVANCED INFORMATION Features Three Stage Single-ended High Power Amplifier • • • • Broadband Performance 30% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process
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ITT338512D
ITT338512D
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Untitled
Abstract: No abstract text available
Text: 8W Power Amplifier Die 6.5 – 9.0 GHz ITT8405D ADVANCED INFORMATION Features • • • • Broadband Performance 30% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8405D is a three stage MMIC power
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ITT8405D
ITT8405D
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ITT8506D
Abstract: No abstract text available
Text: 8W Power Amplifier Die 9.5 – 10.5 GHz ITT8506D ADVANCED INFORMATION Features • • • 38% Typical Power Added Efficiency 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description Maximum Ratings (T The ITT8506D is a three stage MMIC power
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ITT8506D
ITT8506D
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32TBD
Abstract: ITT338505D
Text: 8W Power Amplifier Die 9.5 – 10.5 GHz ADVANCED INFORMATION ITT338505D Features • • • • 32% Typical Power Added Efficiency High Linear Gain: 25 dB typical 50 Ω Input/Output Impedance Self-Aligned MSAG MESFET Process Description MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
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ITT338505D
ITT338505D
32TBD
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Untitled
Abstract: No abstract text available
Text: 3.5V 3.3W RF Power Amplifier 1C for GSM ITT2110AH / ITT2111 AH / ITT2112AH PRELIMINARY DATA SHEET General Description The ITT211X family of GaAs MESFET power amplifiers is designed for Class IV GSM cellular phones. With 3.3W output power, these parts are suitable for dual
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ITT2110AH
ITT2111AH
ITT2112AH
ITT211X
ITT2112AH
ITT2110AH,
ITT2111
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A HIGH OUTPUT POWER: +35 dBm TYP HIGH LINEAR GAIN: 10 dB TYP HIGH POWER ADDED EFFICIENCY: 50% TYP @
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NE6500379A
NE6500379A
NE6500379A-T1
24-Hour
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nec 0882
Abstract: GRM40X7R104K025BL nec ic 8582 nec d 882 p 100A470CP150X tajb475*010r NE6500379A NE6500379A-T1 GRM40-X7R104K025BL TF-100637
Text: 3W, L/S-BAND MEDIUM POWER GaAs MESFET NE6500379A OUTLINE DIMENSIONS FEATURES Units in mm • LOW C OST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @
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NE6500379A
NE6500379A
24-Hour
nec 0882
GRM40X7R104K025BL
nec ic 8582
nec d 882 p
100A470CP150X
tajb475*010r
NE6500379A-T1
GRM40-X7R104K025BL
TF-100637
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 3W, L/S-BAND MEDIUM POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES NE6500379A Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: +35 dBm TYP • HIGH LINEAR GAIN: 10 dB TYP • HIGH POWER ADDED EFFICIENCY: 50% TYP @
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NE6500379A
NE6500379A
NE6500379A-T1
24-Hour
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gaas fet T79
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET S-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES OUTLINE DIMENSIONS NEZ3436-30E Units in mm • HIGH OUTPUT POWER: 30 W PACKAGE OUTLINE T-79 • LOW DISTORTION: -45 dBc IMs (@33 dBm SCL) (Verified by a W afer Qual Test) • HIGH LINEAR GAIN: 10 OdB
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NEZ3436-30E
NEZ3436-30E
24-Hour
gaas fet T79
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TRANSISTOR BC 814
Abstract: TRANSISTOR "BC 258" transistor BF 257 ci 4580 MARKING CFK CFk10 BC 251 transistor TRANSISTOR BC 256 Telefunken u 257
Text: . TELEFUNKEN ELECTRONIC file D ^•3 m W I M M electronic Creative Technologies ■ a^BOG^b 00053^2 5 /~ZS~ CFK10 N-Channel-GaAs-MESFET-Tetrode Depletion Mode Applications: Gain controlled amplifiers and mixers up to 2 GHz In common source configuration; In wireless telephone, broadcast sets, cabel TV and equipments with
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CFK10
569-GS
TRANSISTOR BC 814
TRANSISTOR "BC 258"
transistor BF 257
ci 4580
MARKING CFK
CFk10
BC 251 transistor
TRANSISTOR BC 256
Telefunken u 257
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NEC Ga FET marking A
Abstract: NE25139T1U74 NE25139U NE25139T1U71
Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz
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NE25139
Vi32S
90CIM
NE251
NE25139T1
NE25139U74
24-Hour
NEC Ga FET marking A
NE25139T1U74
NE25139U
NE25139T1U71
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 50W L-BAND PUSH-PULL POWER GaAs MESFET F E A T U R E S _ • HIGH OUTPUT POWER: 50 W TYP • HIGH DRAIN EFFICIENCY: 52 % TYP @ V d s = 10 V, Id = 2 A, f = 1.96 GHz • HIGH LINEAR GAIN: 10.5 dB TYP • PUSH-PULL CONFIGURATION
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NES1821P-50
NES1821P-50
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sumitomo crm epoxy 1061
Abstract: crm-1061 sumitomo crm epoxy sumitomo crm 1061 sumitomo crm specification L444 NLG2131 AS21 sumitomo epoxy crm CRM1061
Text: NEL MARCH 2 7 , 1995 NLG2131 ULTRA-WIDEBAND AMPLIFIER The NLG2131 is a GaAs MESFET IC that performs signal amplification over the wide frequency range extending from lOOKHz to 8GHz. This IC is applicable to 10 Gb/s optical fiber communication sy stem s. The NLG2131 is fabricated using the 0.15 ¿¿m gate length A-SAINT Advanced Self-A ligned
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NLG2131
NLG2131
10MHz
100KHz
d-S21
100KHz
100KHz-7
sumitomo crm epoxy 1061
crm-1061
sumitomo crm epoxy
sumitomo crm 1061
sumitomo crm specification
L444
AS21
sumitomo epoxy crm
CRM1061
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Untitled
Abstract: No abstract text available
Text: 8W GaAs Power Amplifier 6.0 - 7.6 GHz ITT8402FM ADVANCED INFORMATION FEATURES High Output Power: 10 Watts (6.5-7.5 GHz) High Linear Power (P1dB): 36.5 dBm typical High Power Added Efficiency: 25% typical at P1dB High Linear Gain: 20 dB typical 50 Q Input/Output Impedance
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ITT8402FM
8402FM
ITT8402FM
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GaAsTEK
Abstract: No abstract text available
Text: 8V 2W GaAs Power Amplifier Die 4.5 - 7.1 GHz ITT6401D FEATURES • • • • • • • • Broadband Performance High Linear Power (P1dB): 33 dBm typical High Power Added Efficiency: 40% typical at P1dB High Linear Gain: 18 dB typical Efficient performance with 3 to 10 Volt power supply
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ITT6401D
ITT6401D
loQ-360mA
GaAsTEK
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