Untitled
Abstract: No abstract text available
Text: PH F I E L D & LA B E L E C T R O D E S Pre-Mixed pH Calibration Solutions PHA-4-GAL PHA-7-GAL PHA-10-GAL PHA Series $ 5 MADE IN USA Basic Unit ߜ Pre-Mixed pH Solutions ߜ Two Bottle Sizes Available ߜ Standardized Against NIST Certified Sample Formulated to provide precise pH
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PHA-10-GAL
CT485B,
CT585B,
CT485-WMC,
32-day
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Untitled
Abstract: No abstract text available
Text: Reference Tables FLOW EQUIVALENTS 1 Cu. Ft./Hr. 0.0166 0.4719 28.316 471.947 28317 0.1247 7.481 1 Cu. Ft./Min. 60 28.316 1699 28317 1,699,011 7.481 448.831 Cu. Ft./Min LPM LPH CC/Min. CC/Hr. Gal/Min. Gal/Hr. 1 LPM 60 0.035 2.1189 1000 60,002 0.264 15.851 Cu. Ft./Min
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GAL -700 -4
Abstract: GAL 700 37792 27-8210 gal 900
Text: Reference Tables FLOW EQUIVALENTS 1 Cu. Ft./Hr. 0.0166 0.4719 28.316 471.947 28317 0.1247 7.481 1 Cu. Ft./Min. 60 28.316 1699 28317 1,699,011 7.481 448.831 Cu. Ft./Min LPM LPH CC/Min. CC/Hr. Gal/Min. Gal/Hr. 1 LPM 60 0.035 2.1189 1000 60,002 0.264 15.851 Cu. Ft./Min
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gal programming algorithm
Abstract: PALCE29M16 PALCE29M16H PALCE29M16H-25 PD3024
Text: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29M16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ Register/Latch Preload permits full logic replacement; Electrically Erasable EE
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PALCE29M16H-25
24-Pin
gal programming algorithm
PALCE29M16
PALCE29M16H
PALCE29M16H-25
PD3024
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pt 2358
Abstract: gal programming algorithm PALCE29MA16 PALCE29MA16H-25 PD3024 IOE14
Text: USE GAL DEVICES FOR NEW DESIGNS FINAL COM’L: H-25 Lattice Semiconductor PALCE29MA16H-25 24-Pin EE CMOS Programmable Array Logic DISTINCTIVE CHARACTERISTICS • High-performance semicustom logic ■ ■ ■ ■ ■ Register/Latch Preload permits full logic
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PALCE29MA16H-25
24-Pin
pt 2358
gal programming algorithm
PALCE29MA16
PALCE29MA16H-25
PD3024
IOE14
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LATTICE plsi 3000 SERIES cpld
Abstract: LATTICE plsi architecture 3000 SERIES speed 16v8 programming Guide LATTICE 3000 SERIES speed performance 16V8 2032E 2128E GAL22V10 x628 GAL20ra10
Text: Product Selector Guide A Universe of ISP Solutions A Universe of ISP Solutions Introduction E2CMOS GAL® Lattice invented programmable logic devices in the mid-80’s, leading the industry revolution from bipolar PALs to CMOS PLDs. In 1992, Lattice introduced the
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mid-80
2000E
LATTICE plsi 3000 SERIES cpld
LATTICE plsi architecture 3000 SERIES speed
16v8 programming Guide
LATTICE 3000 SERIES speed performance
16V8
2032E
2128E
GAL22V10
x628
GAL20ra10
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Semikron skiip 209
Abstract: 742 IC nf 742
Text: SKiiP 742 GAL 120 - 209 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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datasheet gal 120 05 td
Abstract: semikron IGBT 400A 600v
Text: SKM 600 GAL 126 DT . Absolute Maximum Ratings Tcase = 25 °C, unless otherwise specified Symbol Conditions IGBT VCES IC Tcase = 25 80 °C Tcase = 25 (80) °C, tp =1 ms ICM VGES Tj, (Tstg) TOPERATION ≤ Tstg Visol AC, 1 min. Inverse Diode IF = –IC Tcase = 25 (80) °C
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DIODE S4 65
Abstract: gal 900 DIODE S4 38
Text: SKiiP 1442 GAL 120 - 413 CTV Absolute Maximum Ratings Symbol Visol 4 Top ,Tstg 1) Conditions AC, 1min Operating / stor. temperature Values 3000 -25.+85 IGBT and FWD Diode VCES VCC 5) Operating DC link voltage IC IGBT Tj 3) IGBT + Diode IF Diode IFM Diode, tp < 1 ms
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GAL-33
Abstract: GAL-5 wt 7905 GAL-51 7905 sot89 DF782 GAL-21 16651 7812 SOT GAL-6
Text: Surface Mount W! NE Monolithic Amplifiers 50Ω, Broadband DC to 8 GHz GAL-SERIES Features • • • • • • InGaP HBT microwave amplifiers miniature SOT-89 package frequency range, DC to 8 GHz, usable to 10 GHz up to 18.2 dBm typ. output power excellent package for heat dissipation, exposed metal bottom
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OT-89
DF782
GAL-21
GAL-33
GAL-33
GAL-5
wt 7905
GAL-51
7905 sot89
DF782
GAL-21
16651
7812 SOT
GAL-6
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5252 F 1117
Abstract: GAL-33 GAL-2 14055 GAL-5 7905 sot89
Text: NE W! Surface Mount Monolithic Amplifiers 50Ω, Broadband DC to 8 GHz GAL-SERIES Features • • • • • • InGaP HBT microwave amplifiers miniature SOT-89 package frequency range, DC to 8 GHz, usable to 10 GHz up to 18.2 dBm typ. output power excellent package for heat dissipation, exposed metal bottom
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OT-89
DF782
GAL-21
GAL-33
GAL-51F
GAL-55
GAL-52
GAL-51
5252 F 1117
GAL-2
14055
GAL-5
7905 sot89
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teradyne z1890
Abstract: Sis 968 29MA16 BGA and QFP Package gal amd 22v10 MACH4A pLSI 1016 mach 1 family amd 22v10 pal AMD BGA
Text: L A T T I C E S E M I C O N D U C T Programmable Logic Devices Copyright 2000 Lattice Semiconductor Corporation. Lattice Semiconductor Corporation 5555 Northeast Moore Court Hillsboro, Oregon 97124 U.S.A. Lattice Semiconductor, L stylized Lattice Semiconductor Corp., and Lattice (design), E2CMOS, GAL, Generic Array Logic, ISP,
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scr control circuit for welding
Abstract: scr welding LDX3185 LDX31870 247E03 LDX318
Text: LDX31870 TM POW-R-BLOK Water Cooled Dual SCR Isolated Module 700 Amperes / 1800 Volts Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 OUTLINE DRAWING Description: Powerex Dual SCR Modules are designed for use in applications requiring phase control and isolated
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LDX31870
LDX31870
scr control circuit for welding
scr welding
LDX3185
247E03
LDX318
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Untitled
Abstract: No abstract text available
Text: Reference Tables F LO W E Q U IV A L E N T S 1 Cu. FtVHr. 0.0166 0.4719 28.316 471.947 28317 0.1247 7.481 1 C u. Ft./Min. Cu. Ft./Min LPM LPH CC/Min. CC/Hr. Gal/Min. Gal/Hr. 60 28.316 1699 28317 1,699,011 7.481 448.831 Cu. Ft./Min LPM LPH CC/Min. CC/Hr. Gal/Min.
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01Chart
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QAL22V10-30L
Abstract: PAL22V10 GAL22V10 National gal programming algorithm LY1040 GAL22V10 GAL Gate Array Logic
Text: GAL22V10 NATL SEMICOND LS0112b b3E D MEMORY DGb7b45 «NSCB National mm Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per formance CMOS process with electrically erasable floating
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bS0112b
D0b7b45
GAL22V10,
24-pin
GAL22V10
tl/l/10406-19
tl/l/10406-20
TL/L/10406-21
QAL22V10-30L
PAL22V10
GAL22V10 National
gal programming algorithm
LY1040
GAL Gate Array Logic
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GAL Gate Array Logic
Abstract: gal22v10 application note gal22v10 application gal22v10
Text: GAL22V10 EH National m M Semiconductor GAL22V10, -15, -20, -25, -30 Generic Array Logic General Description Features The NSC E2CMOS GAL devices combine a high per formance CMOS process with electrically erasable floating gate technology. This programmable memory technology
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GAL22V10
GAL22V10,
24-pin
GAL22V10
architectur10
TL/L/10406-21
GAL Gate Array Logic
gal22v10 application note
gal22v10 application
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Untitled
Abstract: No abstract text available
Text: RIFA INC 7D 7752272 RIFA INC DE | 7 7 5 E E ? 2 DODO53D D | 70C 002 30 b ’~7^’"5T/~ £ 5 ^ PGC7000 B2.11 Integrated Circuits ’ k r t- GaAs Low Noise FET Description: The PGC 7000 is a general purpose GaAs gal lium arsenide MESFET (MEtal Semiconductor
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DODO53D
PGC7000
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t3d 57
Abstract: T3D 88 t3d diode T3D 89 Diode T3D 57 GC5510 gc5514g paramp T3D 45 diode GC5511A
Text: LO RA L niCROülAVE-FSI SIE D • 5 5 0 0 1 3 0 G O O G M ? ! T3D ■ GaAs PARAMETRIC AM PLIFIER VARACTORS DESCRIPTION FEATURES The GC5510 series paramp varactors are diffused junction gal lium arsenide devices featuring the lowest series resistance and
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GC5510
MIL-S-19500.
t3d 57
T3D 88
t3d diode
T3D 89
Diode T3D 57
gc5514g
paramp
T3D 45 diode
GC5511A
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GAL22CV10
Abstract: ark 3299 GAL22CV10-10
Text: October 1993 GAL22CV10-10 24-Pin Generic Array Logic Family Features Unique test circuitry and reprogrammable cells allow com plete AC, DC, cell, and functionality testing during manufac ture. Therefore, NSC guarantees 100% field programmabili ty and functionality of NSC GAL devices. In addition, a
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GAL22CV10-10
GAL22CV10-10
24-Pin
GAL22CV10
bS0112b
ark 3299
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Untitled
Abstract: No abstract text available
Text: se MIKROn vVjsol 4 AC, 1min Operating / stor. tem perature o /) o —I Conditions1’ S’ Symbol —I SKiiP 742 GAL 120 - 209 CTV Absolute Maximum Ratings SKiiPPACK Values Units 3000 V -25.+85 °c 1200 V V A IGBT and FW D Diode VcES Operating DC link voltage
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ep330
Abstract: vhdl code for 4 bit counter vhdl code for sr flipflop EP610 ORDERING EPLD 900
Text: Classic Programmable Logic Device Family Data Sheet August 1993, ver. 1 □ Features □ □ □ □ □ □ □ □ □ Complete EPLD fam ily with logic densities up to 1,800 available gates 900 usable gates . See Table 1. M ultiple 20-pin PAL and GAL replacem ent and integration
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20-pin
ALTED001
ep330
vhdl code for 4 bit counter
vhdl code for sr flipflop
EP610 ORDERING
EPLD 900
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BSM150GB100D
Abstract: bsm 256
Text: SIEMENS BSM150GB100D BSM 150 GAL 100 D IGBT Module P re lim in a ry D a ta VCE = 1000 V / c = 2 x 2 0 0 A at Tc = 25 C l c = 2 x 1 5 0 A at fc = 80 C • Power module • Half-bridge/Chopper • Including fast free-wheel diodes • Package with insulated metal base plate
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BSM150GB100D
C67076-A2102-A2
C67076-A2005-A2
BSM150
SII00207
bsm 256
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IGBT Module BSM150GB120D
Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
Text: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule
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BSM150GB120D
2x150
C67076-A2108-A2
C67076-A2013-A2
sii00202
IGBT Module BSM150GB120D
siemens igbt BSM 150 gb 100 d
siemens igbt BSM 150 Gb 160 d
BSM 15 GB
GAL 700
BSM150GB120D
siemens igbt BSM 100 gb
siemens igbt BSM 50 gb 100 d
aa-es siemens
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bsm 256
Abstract: siemens igbt BSM 150 gb 100 d C67076-A2102-A2 BSM 15 GB bsm siemens VM105270
Text: L.GE D • Ö235b05 DDMSÖÖfl 413 « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF IGBT Module Preliminary Data BSM 150 GB 100 D BSM 150 GAL 100 D VCE - 1000 V I c = 2 x 2 0 0 A at T c = 25 C / c = 2 X 150 A at Tc = 8 0 C • • • • • Power m odule H alf-bridge/Chopper
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2x200
BSM150
VM105270
C67076-A2102-A2
C67076-A2005-A2
bsm 256
siemens igbt BSM 150 gb 100 d
BSM 15 GB
bsm siemens
VM105270
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