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    GAN MATCHING 100 WATT Search Results

    GAN MATCHING 100 WATT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MGN1S1208MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1D120603MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-6/-3V GAN Visit Murata Manufacturing Co Ltd
    MGN1S1212MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 12-12V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0508MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-8V GAN Visit Murata Manufacturing Co Ltd
    MGN1S0512MC-R7 Murata Manufacturing Co Ltd DC-DC 1W SM 5-12V GAN Visit Murata Manufacturing Co Ltd

    GAN MATCHING 100 WATT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    EAR99

    Abstract: GaN 100 watt GaN TRANSISTOR GaN matching 100 watt RF3934 Gan hemt transistor RFMD GaN amplifier RF393X RF3931 RF3932
    Text: RFMD . 120 Watt GaN Wideband Power Amplifier The RF3934, the newest of RFMD’s series of unmatched power transistors, is a 48 volt, 120-watt high power discrete amplifier designed for commercial wireless infrastructure, military, industrial/ scientific/medical, and general purpose broadband amplifier


    Original     		PDF RF3934, 120-watt RF3934 EAR99 GaN 100 watt GaN TRANSISTOR GaN matching 100 watt Gan hemt transistor RFMD GaN amplifier RF393X RF3931 RF3932

    GaN 100 watt

    Abstract: No abstract text available
    Text: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-20 TGF2023-20 DC-18 0007-inch GaN 100 watt

    GaN 100 watt

    Abstract: TGF2023-20 GaN matching 100 watt
    Text: TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 50 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 2 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-20 TGF2023-20 DC-18 0007-inch GaN 100 watt GaN matching 100 watt

    TQP200001

    Abstract: No abstract text available
    Text: RFCM3050 40-1003MHZ GAAS/GAN POWER DOUBLER MODULE Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm RFCM3050 Features • Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under all


    Original     		PDF RFCM3050 40-1003MHZ 375mm 1003MHz 440mA 24VDC 40MHz 1003MHz RFCM3050 TQP200001

    Untitled

    Abstract: No abstract text available
    Text: RFCM3080 40-1003MHZ GAAS/GAN PUSH PULL MODULE Package: 9 pin, 11.0 mm x 8.5 mm x 1.375mm RFCM3080 Features • Excellent Linearity  Superior Return Loss Performance  Extremely Low Distortion  Optimal Reliability  Low Noise  Unconditionally Stable Under all


    Original     		PDF RFCM3080 40-1003MHZ 375mm 1003MHz 270mA 24VDC 40MHz 1003MHz RFCM3080

    tgf2023-2-05

    Abstract: No abstract text available
    Text: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 62% Maximum PAE


    Original     		PDF TGF2023-2-05 TQGaN25 TGF2023-2-05 DC-18

    MC8087-2/GaN 100 watt

    Abstract: No abstract text available
    Text: TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 43.9 dBm Nominal PSAT at 3 GHz 56% Maximum PAE


    Original     		PDF TGF2023-2-05 TQGaN25 TGF2023-2-05 DC-18 MC8087-2/GaN 100 watt

    GaN 100 watt

    Abstract: No abstract text available
    Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 250 mA, Vg = -3 V Typical


    Original     		PDF TGF2023-02 TGF2023-02 DC-18 0007-inch GaN 100 watt

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 60% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz


    Original     		PDF TGF2023-2-10 TQGaN25 TGF2023-2-10 DC-18

    tgf2023-2-10

    Abstract: No abstract text available
    Text: TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Frequency Range: DC - 18 GHz 46.7 dBm Nominal PSAT at 3 GHz 55% Maximum PAE 17.5 dB Nominal Power Gain at 3 GHz


    Original     		PDF TGF2023-2-10 TQGaN25 TGF2023-2-10 DC-18

    GaN 100 watt

    Abstract: No abstract text available
    Text: TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 47 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 1 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-10 TGF2023-10 DC-18 0007-inch GaN 100 watt

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 41 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 250 mA, Vg = -3 V Typical


    Original     		PDF TGF2023-02 TGF2023-02 DC-18 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 64% Maximum PAE


    Original     		PDF TGF2023-2-02 TQGaN25 TGF2023-2-02 DC-18

    GaN matching 100 watt

    Abstract: TGF2023-10
    Text: TGF2023-10 50 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 47 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 1 A, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-10 TGF2023-10 DC-18 0007-inch GaN matching 100 watt

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 41 dBm Nominal PSAT at 3 GHz 58% Maximum PAE


    Original     		PDF TGF2023-2-02 TQGaN25 TGF2023-2-02 DC-18

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 44 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-05 TGF2023-05 DC-18 0007-inch

    tgf2023-2-20

    Abstract: No abstract text available
    Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 58% Maximum PAE


    Original     		PDF TGF2023-2-20 TQGaN25 TGF2023-2-20 DC-18

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Frequency Range: DC - 18 GHz > 44 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 500 mA, Vg = -3 V Typical Technology: 0.25 um Power GaN on SiC


    Original     		PDF TGF2023-05 TGF2023-05 DC-18 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 38 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical


    Original     		PDF TGF2023-01 TGF2023-01 DC-18 0007-inch

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 49.6 dBm Nominal PSAT at 3 GHz 53% Maximum PAE


    Original     		PDF TGF2023-2-20 TQGaN25 TGF2023-2-20 DC-18

    GaN matching 100 watt

    Abstract: No abstract text available
    Text: TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT Key Features • • • • • • • Measured Performance Frequency Range: DC - 18 GHz > 38 dBm Nominal Psat 55% Maximum PAE 15 dB Nominal Power Gain Bias: Vd = 28 - 40 V, Idq = 125 mA, Vg = -3 V Typical


    Original     		PDF TGF2023-01 TGF2023-01 DC-18 0007-inch GaN matching 100 watt

    Untitled

    Abstract: No abstract text available
    Text: HMC1086 v04.0714 AMPLIFIERS - LINEAR & POWER - CHIP 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 14 dB • General Communications High Output IP3: +48 dBm


    Original     		PDF HMC1086 HMC1086

    Untitled

    Abstract: No abstract text available
    Text: HMC1086 v03.0414 AMPLIFIERS - LINEAR & POWER - CHIP 25 WATT GaN MMIC POWER AMPLIFIER, 2 - 6 GHz Typical Applications Features The HMC1086 is ideal for: High Psat: +44.5 dBm • Test Instrumentation Power Gain at Psat: 14 dB • General Communications High Output IP3: +48 dBm


    Original     		PDF HMC1086 HMC1086

    Untitled

    Abstract: No abstract text available
    Text: TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Applications • Defense & Aerospace • Broadband Wireless Product Features • • • • • • • Functional Block Diagram Frequency Range: DC - 18 GHz 38 dBm Nominal PSAT at 3 GHz 69% Maximum PAE 18 dB Nominal Power Gain at 3 GHz


    Original     		PDF TGF2023-2-01 TQGaN25 TGF2023-2-01 DC-18