InP transistor HEMT
Abstract: Class E amplifier GaN amplifier inp hemt power amplifier pHEMT transistor visitor Gan hemt transistor varian NONLINEAR MODEL LDMOS
Text: 2130 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 42, NO. 10, OCTOBER 2007 A GaN HEMT Class F Amplifier at 2 GHz With 80% PAE David Schmelzer, Student Member, IEEE, and Stephen I. Long, Senior Member, IEEE Abstract—A Class F amplifier has been designed, fabricated, and
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fpd2000as
Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized
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FPD2000AS
FPD2000AS
33dBm
46dBm
85GHz)
EB2000AS-AA
14GHz)
EB2000AS-AD
EB2000AS-AG
FPD200
CB100
FPD20
RO4003
InP HBT transistor low noise
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Ctr32
Abstract: No abstract text available
Text: RF5604 RF56045 V, 475MHz to 625MHz FEM 5V, 475MHZ TO 625MHZ FEM Package: 20-Pin, 4.5mmx4.5mmx0.975mm Vdd 20 19 18 17 GND 2 15 C_PD GND 3 14 GND GND 4 13 5 12 GND 11 GND TX_IN Applications C_ATT 16 RX_OUT Integrated 50 Input/Output
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RF56045
475MHz
625MHz
RF5604
20-Pin,
975mm
39dBm
RF5604
Ctr32
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Untitled
Abstract: No abstract text available
Text: RF5604 RF56045 V, 475MHz to 625MHz FEM 5V, 475MHZ TO 625MHZ FEM Package: 20-Pin, 4.5mmx4.5mmx0.975mm Vdd 20 19 18 17 GND 2 15 C_PD GND 3 14 GND GND 4 13 5 12 GND 11 GND TX_IN Applications C_ATT 16 RX_OUT Integrated 50 Input/Output
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RF5604
RF56045
475MHz
625MHz
20-Pin,
975mm
39dBm
RF5604
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
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Integrated Synthesizers with Mixers
Abstract: Digital Step Attenuators 3G/4G Power Amplifiers CATV Amplifiers CATV Hybrid Amplifier Modules Gain Blocks Linear Amplifiers Low Noise Amplifiers Variable Gain Amplifiers WiFi Power Amplifiers
Text: RFMD PRODUCT SELECTION GUIDE 2013-2014 Amplifiers Attenuators Modulators Switches Upconverters/Downconverters Voltage-Controlled Oscillators Synthesizers CATV Amplifiers and Tuners High Reliability Components Components for Cellular Applications Open Foundry Services
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11F-B,
Integrated Synthesizers with Mixers
Digital Step Attenuators
3G/4G Power Amplifiers
CATV Amplifiers
CATV Hybrid Amplifier Modules
Gain Blocks
Linear Amplifiers
Low Noise Amplifiers
Variable Gain Amplifiers
WiFi Power Amplifiers
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Untitled
Abstract: No abstract text available
Text: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER NOT FOR NEW DESIGNS Package Style: SOT, 8-Lead Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic
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RF2363
900MHz
1900MHz
OT-23-8
RF2363
950MHz
GSM/1850MHz
DS080707
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Untitled
Abstract: No abstract text available
Text: RF2363 DUAL-BAND 3V LOW NOISE AMPLIFIER Package Style: SOT, 8-Lead Features Low Noise and High Intercept Point 18dB Gain at 900MHz 21dB Gain at 1900MHz Low Supply Current Single 2.5V to 5.0V Power Supply Very Small SOT-23-8 Plastic Package
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RF2363
900MHz
1900MHz
OT-23-8
RF2363
950MHz
GSM/1850MHz
DS040114
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Untitled
Abstract: No abstract text available
Text: RF2163 RF21633 V, 2.5GHz Linear Power Amplifier 3V, 2.5GHz LINEAR POWER AMPLIFIER 19dB Small Signal Gain High Power Added Efficiency Patent Pending Power Sense Technology 1800MHz to 2500MHz Frequency Range 2.5GHz ISM Band Applications PCS Communication Systems
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RF2163
RF21633
30dBm
1800MHz
2500MHz
Log10
DS110615
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A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
Abstract: GaN amplifier Microwave Development Company dummy load volterra N6030 GaN amplifier 100W 4G base station power amplifier combiner THEORY Square D DPA 12 MAR-2 MMIC
Text: This article has been accepted for inclusion in a future issue of this journal. Content is final as presented, with the exception of pagination. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1 A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
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433MHZ amplifier 1w
Abstract: Schematic/RF2126
Text: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT
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RF2126
RF2126High
400MHz
2700MHz
RF2126
2002/95/EC
DS070123
433MHZ amplifier 1w
Schematic/RF2126
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433MHZ amplifier 1w
Abstract: Transistor A14 RF2126PCK RF2126 RF5187 RF Based Wireless Electronic Notice Board pc
Text: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER Features Single 3V to 6.0V Supply 1.3W Output Power 12dB Gain 45% Efficiency Power Down Mode 400MHz to 2700MHz Operation RF IN 1 8 RF OUT RF IN 2 7 RF OUT PC 3 VCC 4 5 RF OUT
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RF2126
RF2126High
400MHz
2700MHz
RF2126
2002/95/EC
DS070511
433MHZ amplifier 1w
Transistor A14
RF2126PCK
RF5187
RF Based Wireless Electronic Notice Board pc
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Untitled
Abstract: No abstract text available
Text: RF2126 RF2126High Power Linear Amplifier HIGH POWER LINEAR AMPLIFIER NOT FOR NEW DESIGNS RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. Features
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RF2126
RF2126High
400MHz
2700MHz
DS130517
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Untitled
Abstract: No abstract text available
Text: RF2162 This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. 3V 900MHz LINEAR AMPLIFIER Package Style: QFN, 16-Pin, 4x4 Single 3V Supply 29dBm Linear Output Power 29dB Linear Gain GND VCC1 VCC1 VCC BIAS
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RF2162
900MHz
16-Pin,
800MHz
960MHz
RF2162
DS121024
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Untitled
Abstract: No abstract text available
Text: RF2162 This is a Legacy Product. For new designs, please contact RFMD to learn about our newer products. 3V 900MHz LINEAR AMPLIFIER NOT FOR NEW DESIGNS Package Style: QFN, 16-Pin, 4x4 Single 3V Supply 29dBm Linear Output Power 29dB Linear Gain VCC1
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RF2162
900MHz
16-Pin,
29dBm
800MHz
960MHz
DS111219
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Untitled
Abstract: No abstract text available
Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features RF IN 1 6 VC2 Input Match IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer
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RF5122
IEEE802
11b/g/n
RF5122
2002/95/EC
DS110617
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Untitled
Abstract: No abstract text available
Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features RF IN 1 6 VC2 Input Match IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications
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RF5122
IEEE802
11b/g/n
RF5122
2002/95/EC
DS070820
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Untitled
Abstract: No abstract text available
Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2 mm x 2 mm x 0.6 mm 8 7 Features RF IN 1 6 VC2 Input Match IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications
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RF5122
IEEE802
11b/g/n
RF5122
2002/95/EC
DS070221
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5GHz wifi power amplifier
Abstract: No abstract text available
Text: RF5322 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.4mm 8 7 Features RF IN 1 6 VC2 Input Match IEEE802.11b/g/n WiFi Applications 2.5GHz ISM Band Applications Commercial and Consumer
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RF5322
IEEE802
11b/g/n
RF5322
2002/95/EC
DS110618
5GHz wifi power amplifier
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SFT-9100
Abstract: InP transistor HEMT sft 43 Sft9100 SFT-9200B 9200B InP HEMT transistor at 50ghz inp hemt low noise amplifier InP HBT transistor mesfet low noise
Text: SFT-9200B SFT-9200B 50GHz Transimpedance Amplifier 50GHZ TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9200B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE
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SFT-9200B
50GHz
SFT-9200B
43Gb/s
40GbE,
100GbE
SFT-9100
InP transistor HEMT
sft 43
Sft9100
9200B
InP HEMT transistor at 50ghz
inp hemt low noise amplifier
InP HBT transistor
mesfet low noise
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RF5122
Abstract: metal detector circuit with pcb IPC-SM-782 QFN12 RF5122PCBA-41X P12 RF PIN SOT
Text: RF5122 3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features RF IN 1 6 VC2 Input Match IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications
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RF5122
IEEE802
11b/g/n
2400MHz
2500MHz
18dBm
120mA
RF5122
2002/95/EC
DS070517
metal detector circuit with pcb
IPC-SM-782
QFN12
RF5122PCBA-41X
P12 RF PIN SOT
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RF5122
Abstract: metal detector circuit with pcb IPC-SM-782 QFN12 QFN8 RF
Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features RF IN 1 6 VC2 Input Match IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer
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RF5122
IEEE802
11b/g/n
2400MHz
2500MHz
18dBm
120mA
2002/95/EC
DS100621
RF5122
metal detector circuit with pcb
IPC-SM-782
QFN12
QFN8 RF
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RF5122
Abstract: IPC-SM-782 QFN12 RF5122PCBA-41X RF Based Wireless Electronic Notice Board pc
Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features RF IN 1 6 VC2 Input Match IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications Commercial and Consumer
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RF5122
IEEE802
11b/g/n
2400MHz
2500MHz
18dBm
120mA
RF5122
2002/95/EC
DS090209
IPC-SM-782
QFN12
RF5122PCBA-41X
RF Based Wireless Electronic Notice Board pc
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Untitled
Abstract: No abstract text available
Text: RF5122 3V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER VCC VC1 RoHS Compliant & Pb-Free Product Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.6mm 8 7 Features RF IN 1 6 VC2 Input Match IEEE802.11b/g/n WLAN Applications 2.5GHz ISM Band Applications
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RF5122
IEEE802
11b/g/n
2400MHz
2500MHz
18dBm
120mA
RF5122
2002/95/EC
DS080513
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