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    GBS TRANSISTOR Search Results

    GBS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GBS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Leaded Fixed Wirewound Resistors

    Abstract: BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic
    Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book leaded fixed wirewound resistors vishay vse-db0008-0806 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0008-0806 Leaded Fixed Wirewound Resistors BV-1 501 yx 801 relay coil 270r yx 801 led Dale RS-1A fusible resistor draloric ska Dale Resistor metal oxide cw-2b FUSE M2 250e yx 801 ic

    LTTS e3

    Abstract: gbs transistors
    Text: Commerce Control List Supplement No. 1 to Part 774 CATEGORY 3 - ELECTRONICS A. “END ITEMS,” “EQUIPMENT,” “ACCESSORIES,” “ATTACHMENTS,” “PARTS,” “COMPONENTS,” AND “SYSTEMS” Note 1: The control status of equipment and “components” described in 3A001 or 3A002,


    Original     		PDF 3A001 3A002, LTTS e3 gbs transistors

    EHT COIL

    Abstract: C105 R105 R117 TDA8350 TDA9150B internal eht pin diagram horizontal output circuit with EHT TDA8350 equivalent
    Text: INTEGRATED CIRCUITS DATA SHEET TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller TDA9150B


    Original     		PDF TDA9150B EHT COIL C105 R105 R117 TDA8350 TDA9150B internal eht pin diagram horizontal output circuit with EHT TDA8350 equivalent

    EHT COIL

    Abstract: C105 R105 R117 TDA8350 TDA9151B
    Text: INTEGRATED CIRCUITS DATA SHEET TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller


    Original     		PDF TDA9151B EHT COIL C105 R105 R117 TDA8350 TDA9151B

    EHT COIL

    Abstract: monitor EHT BUS CONTROLLED VERTICAL DEFLECTION SYSTEM function of tv deflection section C105 R105 R117 TDA8350 TDA9150B TDA8350 equivalent
    Text: INTEGRATED CIRCUITS DATA SHEET TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller TDA9150B


    Original     		PDF TDA9150B SCD33 533061/1500/01/pp36 EHT COIL monitor EHT BUS CONTROLLED VERTICAL DEFLECTION SYSTEM function of tv deflection section C105 R105 R117 TDA8350 TDA9150B TDA8350 equivalent

    TDA9151B

    Abstract: EHT COIL TV horizontal Deflection Systems TDA8350 BUS CONTROLLED VERTICAL DEFLECTION SYSTEM C105 R105 R117
    Text: INTEGRATED CIRCUITS DATA SHEET TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 Philips Semiconductors July 1994 Philips Semiconductors Preliminary specification Programmable deflection controller


    Original     		PDF TDA9151B SCD33 533061/1500/02/pp36 TDA9151B EHT COIL TV horizontal Deflection Systems TDA8350 BUS CONTROLLED VERTICAL DEFLECTION SYSTEM C105 R105 R117

    Untitled

    Abstract: No abstract text available
    Text: 3EE D Bi A23b3S0 DGl?GbS 1 H S I P PNP Silicon RF Transistor BFT 92 SIEMENS/ SPCLi SEMICONDS _ • For broadband amplifiers up to 2 G Hz at collector currents up to 20 mA. • Complementary type: BFR 92P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions!


    OCR Scan     		PDF A23b3S0 OT-23 aS3b32Q Q0170bà BFT92

    Untitled

    Abstract: No abstract text available
    Text: h ~7 > v / 2SD1768S $ /Transistors 2SD 1768S NPN y V 3 > V y ' s v W ^ s tlfr ^ llffl/M e c liu m Power Amp. Epitaxial Planar NPN Silicon Transistor • W K -tf;£@ /D im ension s U n it: mm • 1) VCeo »' ^ (8 0 V ) o 2) U AD C)0 3 ) hFE<7) o 4 ) V c e ( sat


    OCR Scan     		PDF 2SD1768S 1768S

    Untitled

    Abstract: No abstract text available
    Text: h7 > V 2SC4939 $ / I ransistors 2SC 4939 H * y U = l> h -7 Epitaxial Planar NPN Silicon Transistor *y f-> ? ffl/H ig h Speed Switching • fl-J f^ ä ^ /D im e n s io n s (Unit : mm) 1) tf^ 0 .3 n s , (!c = 6 A ) 2) V c e (sat)— 0.3 V (lc /lB = 6 A /0 .3 A )


    OCR Scan     		PDF 2SC4939 50/iS

    Untitled

    Abstract: No abstract text available
    Text: bbS3=i31 002544=1 =105 * A P X BSD22 b7E D N AMER PHI LIP S/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD22 OT-143

    Untitled

    Abstract: No abstract text available
    Text: BSD12 J \ _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z90791

    transistor BD 430

    Abstract: Depletion
    Text: _ II _ bbS3T31 O O I S ^ H 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - 3 S '- 2. S' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type. The transistor is sealed in a SOT-143 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF bbS3T31 BSD20 BSD22 OT-143 transistor BD 430 Depletion

    BSD10

    Abstract: depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V
    Text: • . N AMER PHILIPS/DISCRETE - ft — — — — bbSB'iai Q01724&#39;5 S • E5E D BSD10 BSD12 MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF G1724-S BSD10 BSD12 BSD10 T-35-25 7Z90790 -r90X depletion MOSFET n channel depletion MOSFET BSD12 gbs transistors depletion mode power mosfet 7z87626 k 3525 MOSFET convertor 5 V to -5 V

    BSD12

    Abstract: depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor
    Text: BSD12 _ MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the n-channel depletion mode type. The transistor is sealed in a TO-72 envelope and features a low ON-resistance and low capacitances.


    OCR Scan     		PDF BSD12 7Z907 a03ST0t. BSD12 depletion MOSFET Mosfet n-channel switching transistor N-Channel depletion mos gbs transistor free transistor

    MM4518

    Abstract: MM452 csb 455 c CSB 455 psri mm4529 mm450 MM555
    Text: Intersil High-Rellability Products_ M M 4 5 0 /4 5 1 /4 5 2 /4 5 5 High Reliability High Voltage Analog Switch GENERAL DESCRIPTION FEATURES The MM450, and MM550 series each contain p channel MOS enhancement mode transistors. These devices are useful in airborne and ground support systems requiring


    OCR Scan     		PDF MM450/451/452/455 MM450, MM550 MM450 MM451 MM452 MM455 MM450/451 /452/45S MM4518 MM452 csb 455 c CSB 455 psri mm4529 mm450 MM555

    2SC3839K

    Abstract: 2SC4084
    Text: h ~7 > v 7. $ / T ransistors 2 C S 3 8 3 9 2SC3839K/2SC4084 K x t f ^ v ^ i / y ^ - ^ N P N v u = ] > h - 7 > v * £ Epitaxial Planar NPN Silicon Transistors 2SC4084 raJS'/SiH aE/R F Amplifier Dimensions U n it: mm 1) f r fT = 2 G H z (Typ.) 2SC 3839K 2SC 4084


    OCR Scan     		PDF 2SC3839K/2SC4084 2SC3839K 2SC4084 2SC3839K SC-59 0G11DDT IS12I 2SC4084

    BSD20

    Abstract: 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion
    Text: _ I l . bb53T31 0012=134 3 BSD20 ObE D BSD22 N AMER PHILIPS/DISCRETE MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTORS T - S S '- IS ' Symmetrical insulated-gate silicon MOS field-effect transistors of the N-channel depletion mode type.


    OCR Scan     		PDF bb53T31 BSD20 BSD22 OT-143 bb53131 7Z90790 9010J BSD22 gbs transistors V1525 depletion MOSFET n mosfet depletion

    ha 431 transistor

    Abstract: TV horizontal Deflection Systems TDA9150 IEC134 of ic 555 philips 432 T control 00372bS pj 88 diode
    Text: Objective specification Philips Semiconductors Programmable deflection controller PHILIPS INTERNATIONAL FEATURES SbE » T - I 711002b 00372L3 TTD Current source output for high EMC immunity General • <p2 loop with low jitter • Synchronous logic • Dual slicer horizontal flyback input


    OCR Scan     		PDF 16-bit TDA9150 711005b T-77-07-11 ha 431 transistor TV horizontal Deflection Systems TDA9150 IEC134 of ic 555 philips 432 T control 00372bS pj 88 diode

    transistor BD 339

    Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
    Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.


    OCR Scan     		PDF 00E374S BSD212 BSD215 BSD213 BSD215 BSD214 bb53031 transistor BD 339 transistor BD 341 BB530 -20/transistor BD 341

    depletion MOSFET

    Abstract: BSD22 n mosfet depletion transistor MARKING CODE RJ
    Text: bb53^31 □QSSMM'Î ^05 HIAPX • N AUER PHILIPS/DISCRETE BSD22 b?E D J MOSFET N-CHANNEL DEPLETION SWITCHING TRANSISTOR S ym m etrical insulated-gate silicon MOS fre ld -e ffe ct tran sisto r o f the n-channel d e p le tio n m ode type. The tran sisto r is sealed in a SO T-143 envelope and features a lo w ON-resistance and lo w capacitances.


    OCR Scan     		PDF BSD22 OT-143 7Z90790 depletion MOSFET BSD22 n mosfet depletion transistor MARKING CODE RJ

    STV60N06

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON Ä 7 # R!tlD S[ri ilLICTi iD©l STV60N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss RDS(on Id STV60N06 60 V < 0.02 Û 60 A • TYPICAL R d s (o ii) = 0.017 £2 . AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STV60N06 GD73110 STV60N06

    xl 3358

    Abstract: function of tv deflection section KA025 tda9151 ic 2n35 data ttl D372 UKA039 gbs transistor RFT Semiconductors
    Text: Philips S em iconductors O bjective specification Programmable deflection controller TDA9151 T - 7 7 - o r - u PH IL IP S INTERNATIONAL FEATURES 711Qfl2b 00 37 2 0 5 S b l 5bE D General • Current source output for high EMC immunity • 6.75,13.5 and 27 MHz clock


    OCR Scan     		PDF TDA9151 T-77-or-w 16-bit 711002b T-77-Ã TDA9151 711005b 003730b xl 3358 function of tv deflection section KA025 ic 2n35 data ttl D372 UKA039 gbs transistor RFT Semiconductors

    UKA720

    Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
    Text: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller


    OCR Scan     		PDF TDA9150B 711002b 16-bit 7110fl2b UKA720 TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555

    TDK Power Supply MRW

    Abstract: K-Line L line tda9151 TDA9151B
    Text: INTEGRATED CIRCUITS TDA9151B Programmable deflection controller Preliminary specification Supersedes data of June 1993 File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS I • 711DA2L, 0 0 7 0 1 0 7 T43 ■ PHILIPS Preliminary specification


    OCR Scan     		PDF TDA9151B 16-bit 7110flEb G7fi21ci TDK Power Supply MRW K-Line L line tda9151 TDA9151B