100N20
Abstract: ste100n20 C59-60
Text: £ j ï SGS-THOMSON S T E 100N 20 ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE100N20 dss 200 V RDS on Id < 0.021 Q. 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER
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STE100N20
STH33N20FI
E81743)
100N20
ste100n20
C59-60
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Untitled
Abstract: No abstract text available
Text: m 7 ^ 5 ^53? 0045632 Sfl3 • S G T H f Z 7 SCS-THOMSON Ä 7# STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE100N20 V dss RüS on Id 200 V < 0.021 Q 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)
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STE100N20
STH33N20FI
E81743)
5606Q
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ISD100A
Abstract: STE100N20 100R6 STH33N20FI DD45
Text: m 7 ^ 5 ^53? 0045632 Sfl3 • S G T H f Z 7 SCS-THOMSON Ä 7# STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE100N20 V dss RüS on Id 200 V < 0.021 Q 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)
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STE100N20
STE100N20
STH33N20FI
E81743)
7TE1E37
100R6
GC5606
ISD100A
DD45
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