GE TRANSISTOR HANDBOOK Search Results

GE TRANSISTOR HANDBOOK Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

GE TRANSISTOR HANDBOOK Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
113 marking code PNP transistor Abstract: TRANSISTOR 3F t marking code 10 sot23 pnp low saturation transistor sot23 PNP POWER TRANSISTOR SOT23 PBSS5220T PBSS5230T Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5220T 20 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 20 V, 2 A PNP low VCEsat (BISS) transistor PBSS5220T FEATURES QUICK REFERENCE DATA	Original	M3D088 PBSS5220T SCA75 R75/01/pp7 113 marking code PNP transistor TRANSISTOR 3F t marking code 10 sot23 pnp low saturation transistor sot23 PNP POWER TRANSISTOR SOT23 PBSS5220T PBSS5230T	PDF
PBSS5250T Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5250T 50 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Oct 09 Philips Semiconductors Product specification 50 V, 2 A PNP low VCEsat (BISS) transistor PBSS5250T QUICK REFERENCE DATA FEATURES	Original	M3D088 PBSS5250T SCA75 R75/01/pp7 PBSS5250T	PDF
marking code 10 sot23 Abstract: PNP POWER TRANSISTOR SOT23 PBSS5230T Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D088 PBSS5230T 30 V, 2 A PNP low VCEsat BISS transistor Product specification 2003 Dec 18 Philips Semiconductors Product specification 30 V, 2 A PNP low VCEsat (BISS) transistor PBSS5230T FEATURES QUICK REFERENCE DATA	Original	M3D088 PBSS5230T SCA75 R75/01/pp7 marking code 10 sot23 PNP POWER TRANSISTOR SOT23 PBSS5230T	PDF
sot231a Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product specification Supersedes data of 2001 Mar 27 2001 Jul 20 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA	Original	M3D102 PBSS5140U 613514/02/pp12 sot231a	PDF
BF820W Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W FEATURES PINNING • Low current max. 50 mA	Original	M3D102 BF820W OT323 613514/04/pp6 BF820W	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT ge M3D102 BF820W NPN high-voltage transistor Product data sheet Supersedes data of 1997 Sep 03 2003 Sep 09 NXP Semiconductors Product data sheet NPN high-voltage transistor BF820W PINNING FEATURES • Low current max. 50 mA PIN	Original	M3D102 BF820W OT323 613514/04/pp6	PDF
BU808DFI Abstract: BU808DFI equivalent STX112 HORIZONTAL DRIVER TRANSISTOR STX112 equivalent Thomson TV circuit diagram BU808DF TV horizontal Deflection Systems TRANSISTOR bu808dfi AN1184 Text: AN1184 APPLICATION NOTE BU808DFI IN THE HORIZONTAL DEFLECTION STAGE by Giacomo Porcelli 1. INTRODUCTION The purpose of this application note is to give the TV designer the simple tools, when the Darlington solution is used in the horizontal deflection stage.	Original	AN1184 BU808DFI BU808DFI: BU808DFI equivalent STX112 HORIZONTAL DRIVER TRANSISTOR STX112 equivalent Thomson TV circuit diagram BU808DF TV horizontal Deflection Systems TRANSISTOR bu808dfi AN1184	PDF
BU808DFI equivalent Abstract: BU808DF STX112 BU808DFI using of damper in Horizontal Output Transistor HORIZONTAL DRIVER TRANSISTOR pal 001a STX112 equivalent AN1184 BU808d Text: AN1184 APPLICATION NOTE BU808DFI IN THE HORIZONTAL DEFLECTION STAGE by Giacomo Porcelli 1. INTRODUCTION The purpose of this application note is to give the TV designer the simple tools, when the Darlington solution is used in the horizontal deflection stage.	Original	AN1184 BU808DFI BU808DFI: BU808DFics. BU808DFI equivalent BU808DF STX112 using of damper in Horizontal Output Transistor HORIZONTAL DRIVER TRANSISTOR pal 001a STX112 equivalent AN1184 BU808d	PDF
ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Abstract: No abstract text available Text: ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology Jiro Yota GaAs Technology, Skyworks Solutions, Inc. 2427 W. Hillcrest Drive, Newbury Park, CA 91320, USA [email protected] Hafnium dioxide HfO2 and aluminum oxide (Al2O3) films have	Original	01AC09 ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology	PDF
transistor 2N4 Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748 Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION	OCR Scan		PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
ge-10 transistor Abstract: No abstract text available Text: Philips Sem iconductors Product specification P-channel enhancement mode vertical D-MOS transistor BSP225 FOR DETAILED INFORMATION SEE THE LATEST ISSUE OF HANDBOOK SC07 OR DATA SHEET QUICK REFERENCE DATA FEATURES • L o w RDsloii\| SYM BO L • D irect in te rfa c e to C -M O S , T T L,	OCR Scan	BSP225 OT223 ge-10 transistor	PDF
diode E155 Abstract: mig20j Text: T O SH IB A TENTATIVE MIG20J906E/EA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J906E, MIG20J906EA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.	OCR Scan	MIG20J906E/EA MIG20J906E, MIG20J906EA MIG20J906E 2-108E5A 2-108E6A o--------Bo40- 80Ilo 961001EAA1 diode E155 mig20j	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MG100J7KS50 MG1 00 J 7 K S 5 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS 2.54 X 6 MOTOR CONTROL APPLICATIONS • • • • • The Electrodes are isolated from Case. High Input Impedance 7 IGBTs Built into 1 Package.	OCR Scan	MG100J7KS50 2-110A1B	PDF

MIG30J906H Abstract: MIG30J906HA P channel 600v 30a IGBT 5V to 300V dc dc converter Text: T O SH IB A MIG30J906H/HA TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG30J906Hf MIG30J9Q6HA HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter and Brake Power Circuits and Thermistor in One Package.	OCR Scan	MIG30J906H/HA MIG30J906H, MIG30J906HA 0A/600V 0A/800V MIG30J906H 2-108E3A 2-108E4A 961001EAA2 MIG30J906H MIG30J906HA P channel 600v 30a IGBT 5V to 300V dc dc converter	PDF
MG100Q2YS50 Abstract: No abstract text available Text: TO SHIBA MG100Q2YS50 MG100Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.)	OCR Scan	MG100Q2YS50 2-95A4A 10//s MG100Q2YS50	PDF
toshiba MG200Q2YS50 Abstract: MG200Q2YS50 Text: TO SHIBA MG200Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG200Q2 YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode	OCR Scan	MG200Q2YS50 200Q2 10//s toshiba MG200Q2YS50 MG200Q2YS50	PDF
Untitled Abstract: No abstract text available Text: GE C P L E S S E Y [SE M IC O N D U C T O R S I ADVANCE INFORMATION SP5024 1.3 GHz 3-WIRE BUS CONTROLLED SYNTHESISER Supersedes edition in the Consumer 1C Handbook, September 1991 The SP5024 is a programming variant of the SP5510 allowing the design of one tuner with either l2C bus or 3wire bus format depending on which device is inserted. The	OCR Scan	SP5024 SP5024 SP5510 SP5024, 50kHz,	PDF
Untitled Abstract: No abstract text available Text: TO SHIBA GT8J102 SM TO SH IBA INSULATED GATE BIPO LA R TRANSISTOR SILICON N CHANNEL IGBT G T 8 J 1 0 2 (SM) O HIGH P O W E R SW ITCHIN G APPLICATIONS. O M O TO R CONTROL APPLICATIONS. • H igh In p u t Im pedance • H igh Speed : tf= 0 .3 5 //s (Max.) • Low S atu ratio n Voltage	OCR Scan	GT8J102	PDF
MIG20J805E Abstract: mig20j805 Text: T O SH IB A TENTATIVE MIG20J805E TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J805E HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage	OCR Scan	MIG20J805E 2-81B1A 961001EAA1 MIG20J805E mig20j805	PDF
mig20j Abstract: No abstract text available Text: T O SH IB A TENTATIVE MIG20J855E TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG20J855E HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • Integrates Inverter, Converter Power Circuits in One Package. Output Inverter Stage	OCR Scan	MIG20J855E 2-81B1A 961001EAA1 mig20j	PDF
transistor JSW Abstract: jSw Diode Text: TOSHIBA MG200Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 2 0 0 Q 1 US 5 1 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)	OCR Scan	MG200Q1US51 transistor JSW jSw Diode	PDF
DIODE OA-200 Abstract: MG400Q1US51 Text: T O S H IB A MG400Q1US51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 4 0 0 Q 1 US51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3^s Max. @Induetive Load Low Saturation Voltage : VCE (Sat) =3.6V (Max.)	OCR Scan	MG400Q1US51 2-109F1A 10//s DIODE OA-200 MG400Q1US51	PDF
TRANSISTOR BJ 003 Abstract: MG150J1JS50 60A4 Text: TOSHIBA MG150J1JS50 MG1 50J1JS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2 - 0 5 .4* 0.3 • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One	OCR Scan	MG150J1JS50 150J1JS50 VCEVQE--10V TRANSISTOR BJ 003 MG150J1JS50 60A4	PDF

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GE TRANSISTOR HANDBOOK Search Results

GE TRANSISTOR HANDBOOK Result Highlights (5)

GE TRANSISTOR HANDBOOK Datasheets Context Search

113 marking code PNP transistor

PBSS5250T

marking code 10 sot23

sot231a

BF820W

Untitled

BU808DFI

BU808DFI equivalent

ALD HfO2 and Al2O3 as MIM Capacitor Dielectric for GaAs HBT Technology

transistor 2N4

RCA H 541

ge-10 transistor

diode E155

Untitled

MIG30J906H

MG100Q2YS50

toshiba MG200Q2YS50

Untitled

Untitled

MIG20J805E

mig20j

transistor JSW

DIODE OA-200

TRANSISTOR BJ 003