GENERAL ELECTRIC GES6219 Search Results

GENERAL ELECTRIC GES6219 Result Highlights (5)

Part	Manufacturer	Description
HN1D05FE	Toshiba Electronic Devices & Storage Corporation	Switching Diode, 400 V, 0.1 A, ES6
GRM022C71A472KE19L	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM033C81A224KE01W	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM155D70G475ME15D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose
GRM155R61J334KE01D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose

GENERAL ELECTRIC GES6219 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NPN Transistor TO92 5V 200mA Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A Text: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K	OCR Scan	GES5305 2K-20K 200mA, 200MA GES5306 /K-70K GES5306A 7K-70K. NPN Transistor TO92 5V 200mA 2N3877A GES5307 GES6220 D38L1-3 GES5308 GES5308A	PDF
2N3877 Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘	OCR Scan	2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390 2N3391 2N3877 2n3877a GES6220	PDF
2N5306 equivalent Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN	OCR Scan	2N4256 2N4424 2N4425 130-b40 2IM5172 2N5174 2N5232 2N5232A 2N5249A 100Hz) 2N5306 equivalent ATI 200M D39C4 GES6220	PDF
GES6220 Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Type @ 1 0 m A V Min. 1 60 GES5822 NP hl GES5823 a a GES5824 GES5825 I GES5826 40 GES5827 GES5828 GES6000 GES6001 GES6002 200 200 120 200 300 40 40 25 25 25 50 00 00 OB 500 800 300 300	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES5447 GES6220 GES6001	PDF
mhb 7001 Abstract: PJ 1269 D39C4 GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device 'F E bvceo Type @10mA V Min. 1 I I • m Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 mhb 7001 PJ 1269 D39C4 GES6220	PDF
GES6220 Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device 1 I I • m 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000 GES6001 GES6002 50 00 00 OB 500 800 300 300 500 GES6003 GES6004 GES6005 GES6006 GES6007 NP» NM mp un PHP	OCR Scan	to-92 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6220 GES6001	PDF
ERF 2030 Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @10mA V Min. 1 II • m fT Ccb @ 10V - Typical 1 MHz Continuous Max. @ lc (mA) (MHz) Typical (Pp) ImA) 'F E b v ceo Device V CE(sat) Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 -IN4I48 ERF 2030 GES6220	PDF
2N5089 equivalent Abstract: D39C4 GES5307 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sat E b v C EO Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 GES5305, 2N5089 equivalent D39C4 GES5307	PDF
GES6220 Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO -92 PACKAGE Device 'F E bvceo VCE sat Type @10mA(V) Min. Max. @ lc(mA) I I • m 1 GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 NPft	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 QES6004- GES6004: GES6220 GES6001	PDF
GES5822 Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device b v ceo Type @10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002	PDF
800-0400 Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 VCE (sat) Max. @ lc (m A ) 40 00 00 60	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40LECTOR-BASE GES6007 800-0400 GES6001	PDF
ES5448 Abstract: GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40MBIENT 9ES6003 ES5448 GES6220	PDF
GES5307 Abstract: 2N3901 2n3901 equivalent 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N5232A Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE b v CEO Type 2N 3391A NPN 25 2 N 3844 NPN 30 2N 3844A NPN 30 35-70 2N 3845 NPN 30 60 -1 2 0 2N 3845A NPN 30 60-120 2N 3900A NPN 18 2 5 0-&00 2N3901 NPN 18 2N 5232A NPN 2N 5249A 2N 5306A V NF hFE Device Min.-Max. @ l c > ^ C E <V)	OCR Scan	2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 25G-b00 100MA, 2N3901 GES5305, GES5307 2n3901 equivalent 2N5232A	PDF
GES5822 Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 Text: SILICON S IG N A L TRAN SIS TO R S G E N E R A L PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005	OCR Scan	to-92 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 QES6004- GES6001 GES6002	PDF

GES5822 Abstract: GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device bvceo Type @10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006 GES6007	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 ges6011, 6ES60II GES6001 GES6002	PDF
BE10N Abstract: GES6012 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10m A V Min. I I • m 1 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000 GES6001 GES6002 NPft NP» NM mp un 40 40 25 25 25 50 00 00 OB WS 500 800 300 300 500 GES6003 GES6004	OCR Scan	GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 40volts GES60I0 BE10N GES6012	PDF
c 337 25 Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451 Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3	OCR Scan		PDF
aeg diode Si 61 L Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books	OCR Scan	11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF

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GENERAL ELECTRIC GES6219 Search Results

GENERAL ELECTRIC GES6219 Result Highlights (5)

GENERAL ELECTRIC GES6219 Datasheets Context Search

NPN Transistor TO92 5V 200mA

2N3877

2N5306 equivalent

GES6220

mhb 7001

GES6220

ERF 2030

2N5089 equivalent

GES6220

GES5822

800-0400

ES5448

GES5307

GES5822

GES5822

BE10N

c 337 25

aeg diode Si 61 L

y51 h 120c