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    GENERAL SEMICONDUCTOR MARKING SJ 29 Search Results

    GENERAL SEMICONDUCTOR MARKING SJ 29 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GENERAL SEMICONDUCTOR MARKING SJ 29 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    FCPF11N60NT

    Abstract: FCP11N60N GENERAL SEMICONDUCTOR MARKING SJ DIODE General Semiconductor SJ diode
    Text: FCP11N60N / FCPF11N60NT N-Channel SupreMOS MOSFET 600 V, 10.8 A, 299 mΩ Features Description • RDS on = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCP11N60N FCPF11N60NT FCPF11N60NT GENERAL SEMICONDUCTOR MARKING SJ DIODE General Semiconductor SJ diode

    Untitled

    Abstract: No abstract text available
    Text: FCP11N60N / FCPF11N60NT N-Channel SupreMOS MOSFET 600 V, 10.8 A, 299 mΩ Features Description • RDS on = 255 mΩ (Typ.) @ VGS = 10 V, ID = 5.4 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCP11N60N FCPF11N60NT

    transistor D400 pin diagram

    Abstract: CON501 transistor D400 pin diagram application INAP125T24 d400 transistor CON502 CON500 MB91V460 transistor D400 circuit diagram application transistor D400
    Text: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910069-13 FR60 FAMILY ADAPTER BOARD EMA-MB91V460A-300 USER GUIDE EMA-MB91V460A-300 Revision History Revision History Date 17.12.2007 23.01.2008 29.01.2008 18.03.2008 25.03.2008 13.10.2008 Issue V1.00, RH/AW/MB, First Release


    Original     		PDF FMEMCU-UG-910069-13 EMA-MB91V460A-300 transistor D400 pin diagram CON501 transistor D400 pin diagram application INAP125T24 d400 transistor CON502 CON500 MB91V460 transistor D400 circuit diagram application transistor D400

    54f164admqb

    Abstract: No abstract text available
    Text: 54F 74F164A Serial-In Parallel-Out Shift Register General Description Features The ’F164A is a high-speed 8-bit serial-in parallel-out shift register Serial data is entered through a 2-input AND gate synchronous with the LOW-to-HIGH transition of the clock


    Original     		PDF 74F164A F164A 74F164APC 96286071012A 54F164ADM 5962-8607101CA 54f164admqb

    Untitled

    Abstract: No abstract text available
    Text: 54F 74F378 Parallel D Register with Enable General Description Features The ’F378 is a 6-bit register with a buffered common Enable This device is similar to the ’F174 but with common Enable rather than common Master Reset Y Y Y Y Y Commercial Military


    Original     		PDF 74F378 74F378PC 16-Lead 16-Lead 5962-8855501EA 54F378DMQB

    74F169PC

    Abstract: No abstract text available
    Text: 54F 74F169 4-Stage Synchronous Bidirectional Counter General Description Features The ’F169 is a fully synchronous 4-stage up down counter The ’F169 is a modulo-16 binary counter Features a preset capability for programmable operation carry lookahead for


    Original     		PDF 74F169 modulo-16 74F169PC 16-Lead 962-86072012A 54F169 96286072012A 54F169DMQB 5962-8607201EA 74F169PC

    Untitled

    Abstract: No abstract text available
    Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 m Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH47N60N 11PLANARâ

    SERDES

    Abstract: fch47n60n 511 MOSFET
    Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH47N60N FCH47N60N SERDES 511 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: 54F 74F377 Octal D Flip-Flop with Clock Enable General Description Features The ’F377 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs The common buffered Clock CP input loads all flip-flops simultaneously when the Clock Enable (CE) is LOW


    Original     		PDF 74F377 5962-9091001M2A 54F377 59629091001M2A 5962-9091001MRA 54F377DMQB 5962-9091001MRA 5962-9091001MSA 54F377FMQB

    74F273

    Abstract: No abstract text available
    Text: 54F 74F273 Octal D Flip-Flop General Description Features The ’F273 has eight edge-triggered D-type flip-flops with individual D inputs and Q outputs The common buffered Clock CP and Master Reset (MR) inputs load and reset (clear) all flip-flops simultaneously


    Original     		PDF 74F273 962-88550012A 54F273 96288550012A 5962-8855001RA 54F273DMQB 5962-8855001RA 5962-8855001SA 54F273FMQB

    Untitled

    Abstract: No abstract text available
    Text: FCMT299N60 N-Channel SuperFET II MOSFET 600 V, 12 A, 299 mΩ Features Description • 650 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance


    Original     		PDF FCMT299N60

    FCPF13N60NT

    Abstract: FCP13N60N
    Text: FCP13N60N / FCPF13N60NT N-Channel SupreMOS MOSFET 600 V, 13 A, 258 mΩ Features Description • RDS on = 244 mΩ (Typ.) @ VGS = 10 V, ID = 6.5 A The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCP13N60N FCPF13N60NT FCPF13N60NT

    Untitled

    Abstract: No abstract text available
    Text: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH47N60N

    D2W202F

    Abstract: D2W203F BH17 D2W203F-11 E116950 RS-443
    Text: Series D2W 2-3.5Amp • 120/240 Vac - AC OUTPUT SIP • • • • Triac Output Printed Circuit Board Mount Internal Snubber Zero Voltage Switching The D2W Series features an epoxycoated package that provides exceptional environmental protection. Pinouts are compatible with Series 6


    Original     		PDF D2W203F-11 D2W203F D2W202F SJ/T11364 SJ/T11364 D2W202F D2W203F BH17 D2W203F-11 E116950 RS-443

    Untitled

    Abstract: No abstract text available
    Text: CHIP RESISTOR Chip Resistors Selection Guide • General Purpose Chip Resistor SERIES MA 0402 KO 0402 1.00*0.50 1/16W 50V 1/10W 0805 2.00*1.25 1210 3.10*2.50 1812/2010 2010 5.00*2.50 2512 2512 6.25*3.10 1/4W 200V 1/2W 200V 3/4W 200V TO 1210 150V UC ND CO 1206


    Original     		PDF 1/16W 350oC 0402x2/4P2R0402 0402x4/8P4R0402 1002/10K 0603x4/8P4R0603

    Untitled

    Abstract: No abstract text available
    Text: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from


    Original     		PDF FCH47N60NF

    Crydom CMX60D10

    Abstract: No abstract text available
    Text: Series MS11-CMX 3 -10 Amp • 0-200 Vdc • DC Output DC output SPST-NO solid state relays use MOSFET output for high switching capabilities in a DIN Rail TS-35 mount air-cooled package. • DIN Rail Mount (TS 35) • MOSFET Output • Extra Low On State


    Original     		PDF MS11-CMX TS-35) MS11-CMX60D5 MS11-CMX60D10 MS11-CMX100D6 MS11-CMX200D3 SJ/T11364 SJ/T11364 Crydom CMX60D10

    Untitled

    Abstract: No abstract text available
    Text: FCP9N60N / FCPF9N60NT N-Channel SupreMOS MOSFET 600 V, 9 A, 385 mΩ Features Description • RDS on = 330 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCP9N60N FCPF9N60NT

    Untitled

    Abstract: No abstract text available
    Text: FCP13N60N / FCPF13N60NT N-Channel SupreMOS MOSFET 600 V, 13 A, 258 mΩ Features Description • RDS on = 220 mΩ (Typ.) @ VGS = 10 V, ID = 6.5 A The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology


    Original     		PDF FCP13N60N FCPF13N60NT

    Untitled

    Abstract: No abstract text available
    Text: 54F 74F191 Up Down Binary Counter with Preset and Ripple Clock General Description Features The ’F191 is a reversible modulo-16 binary counter featuring synchronous counting and asynchronous presetting The preset feature allows the ’F191 to be used in programmable dividers The Count Enable input the Terminal Count


    Original     		PDF 74F191 modulo-16 74F191PC 54F191DM 5962-9058201EA 54F191DM 54F191DMQB 5962-9058201EA 54F191FMQB

    ON semiconductor 340g

    Abstract: No abstract text available
    Text: Series PRG 150Amp • 120/240, 480, 600 Vac - AC OUTPUT • Zero Voltage and Random Turn-On Switching • Extra High Steady-State Current • Panel Mount • Internal Snubber DC CONTROL AC CONTROL MODEL NUMBERS Featuring state-of-the-art Surface Mount Technology, this SPST-NO


    Original     		PDF 150Amp PRGD24150 PRGA24150 PRGD48150 PRGA48150 SJ/T11364 SJ/T11364 ON semiconductor 340g

    Untitled

    Abstract: No abstract text available
    Text: Series PRG 150Amp • 120/240, 480 Vac - AC OUTPUT • Zero Voltage and Random Turn-On Switching • Extra High Steady-State Current • Panel Mount • Internal Snubber DC CONTROL AC CONTROL MODEL NUMBERS Featuring state-of-the-art Surface Mount Technology, this SPST-NO


    Original     		PDF 150Amp PRGD24150 PRGA24150 PRGD48150 PRGA48150 15-1NY: SJ/T11364 SJ/T11364

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SV228 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 2 8 Unit in mm ELECTRONIC TUNING APPLICATIONS OF FM RECEIVERS. • • Low rs : rs = 0.3O Typ. Small Package M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Reverse Voltage


    OCR Scan     		PDF 1SV228 SC-59