NTE105
Abstract: TO36 package pnp germanium to36 Germanium power
Text: NTE105 Germanium PNP Transistor Audio Power Amp Description: The NTE105 is a germanium PNP power transistor in a TO36 type package designed for use in power switching and amplifier applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
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NTE105
NTE105
TO36 package
pnp germanium to36
Germanium power
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pnp germanium transistor
Abstract: No abstract text available
Text: zStmi-Conducko'i ZPioduati, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N527 (GERMANIUM) PNP germanium transistor for switching and amplifier applications in the audio-frequency range.
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2N527
pnp germanium transistor
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NTE131MP
Abstract: NTE155 NTE131 germanium transistors NPN Germanium power
Text: NTE131 PNP & NTE155 (NPN) Germanium Complementary Transistors Audio Power Amplifier Description: The NTE131 (PNP) and NTE155 (NPN) are Germanium PNP Alloy Junction transistors in a Japanese TO66 type package designed for use in audio power amplifier applications.
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NTE131
NTE155
100mA
NTE131MP
NTE155
NTE131
germanium transistors NPN
Germanium power
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"PNP Transistor"
Abstract: germanium transistor pnp GERMANIUM TRANSISTOR pnp germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS pnp transistor 6V transistor 200ma pnp GERMANIUM Germanium diode data sheet germanium pnp transistor
Text: NTE226 Germanium PNP Transistor Audio Power Amp Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V
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NTE226
NTE226
200mA
200mA,
"PNP Transistor"
germanium transistor pnp
GERMANIUM TRANSISTOR
pnp germanium transistor
GERMANIUM SMALL SIGNAL TRANSISTORS
pnp transistor 6V
transistor 200ma pnp
GERMANIUM
Germanium diode data sheet
germanium pnp transistor
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NTE104M
Abstract: NTE104MP NTE104 transistor germanium germanium pnp transistor Germanium power 50V 1A PNP power transistor
Text: NTE104 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE104
NTE104
NTE104M
NTE104MP
transistor germanium
germanium pnp transistor
Germanium power
50V 1A PNP power transistor
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pnp germanium transistor
Abstract: No abstract text available
Text: ^s-mi-donduatoi , fine. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 U.S.A. -526 GERMANIUM) PNP germanium transistor for switching and amplifier applications in the audio-frequency range. MAXIMUM RATINGS
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NTE158
Abstract: germanium pnp transistor Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low-power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
germanium pnp transistor
Germanium power
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NTE158
Abstract: germanium audio Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low−power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
germanium audio
Germanium power
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NTE158
Abstract: Germanium power
Text: NTE158 Germanium PNP Transistor Audio Power Amplifier Description: The NTE158 is a germanium PNP triode transistor in a TO1 type package designed for low–power, large signal audio applications. Absolute Maximum Ratings: TA = +25°C Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32V
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NTE158
NTE158
300mA
Germanium power
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NTE121MP
Abstract: NTE121 GERMANIUM ie 10a germanium pnp transistor Germanium power
Text: NTE121 Germanium PNP Transistor Audio Frequency Power Amplifier Description: The NTE121 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an audio frequency power output amplifier. Absolute Maximum Ratings: TA = +25°C unless otherwise specified
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NTE121
NTE121
NTE121MP
GERMANIUM
ie 10a
germanium pnp transistor
Germanium power
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Untitled
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3237TK LOW NOISE WIDE BAND SILICON GERMANIUM MMIC AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The μPC3237TK is a silicon germanium SiGe monolithic integrated circuit designed as low noise amplifier for the
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PC3237TK
PC3237TK
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Untitled
Abstract: No abstract text available
Text: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.
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PC3244TB
R09DS0015EJ0100
PC3244TB
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Untitled
Abstract: No abstract text available
Text: PreliminaryData Sheet PC3244TB Bipolar Analog Integrated Circuit 3.3 V, Silicon Germanium MMIC Medium Output Power Amplifier R09DS0015EJ0100 Rev.1.00 Mar 28, 2011 DESCRIPTION The μPC3244TB is a silicon germanium monolithic IC designed as IF amplifier for DBS tuners.
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PC3244TB
R09DS0015EJ0100
PC3244TB
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marking c1g
Abstract: C3K marking marking C3Z
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3242TB
PC3242TB
M8E0904E
marking c1g
C3K marking
marking C3Z
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marking C3Z
Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3242TB
PC3242TB
M8E0904E
marking C3Z
PC3242TB-E3-A
PC3242TB-E3
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germanium transistor ac 125
Abstract: No abstract text available
Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU730F
OT343F
JESD625-A
germanium transistor ac 125
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PC2710TB
Abstract: ro4003 PC3223TB marking c3j
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3236TK
PC3236TK
PC2710TB
ro4003
PC3223TB
marking c3j
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BFU760F
Abstract: bfu760 JESD625-A dielectric resonator oscillator germanium transistor table Germanium power
Text: BFU760F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU760F
OT343F
JESD625-A
BFU760F
bfu760
dielectric resonator oscillator
germanium transistor table
Germanium power
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BFU730F
Abstract: JESD625-A 555 ic Germanium power
Text: BFU730F NPN wideband silicon germanium RF transistor Rev. 1 — 29 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
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BFU730F
OT343F
JESD625-A
BFU730F
555 ic
Germanium power
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marking c3j
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3236TK 5 V, SILICON GERMANIUM MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The μPC3236TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.
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PC3236TK
PC3236TK
marking c3j
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marking s20 SMD Transistor
Abstract: sot883c SMD IC MARKING GP BFU730LX AN11224 Germanium power
Text: 62 7 & BFU730LX NPN wideband silicon germanium RF transistor Rev. 1 — 8 May 2013 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a SOT883C leadless ultra small plastic SMD package.
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BFU730LX
OT883C
JESD625-A
marking s20 SMD Transistor
sot883c
SMD IC MARKING GP
BFU730LX
AN11224
Germanium power
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OC 140 germanium transistor
Abstract: MA202 MA206 germanium pnp transistor germanium transistor oc 160 germanium transistor
Text: MA202, MA206 germanium Germanium PNP transistor designed for high-voltage applications in the audio frequency range, such as neon driver, solenoid or relay driver applications. CASE 31(1) (TO-5) All UacU isolated from cat« S T Y L E J: PIN 1. EM ITTER 2. BASE
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MA202
MA206
MA206
MA202fMA206
OC 140 germanium transistor
germanium pnp transistor
germanium transistor oc
160 germanium transistor
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MP2060
Abstract: MP2063 100-C MP2061 MP2062 Germanium power *p2861
Text: MP2060 thru MP2063 GERMANIUM STYLE): PIN 1. BASE 2. EMITTER CASE:COLLECTOR CASE 11 PNP germanium power tran sisto rs for audio am plifier applications. M AXIM UM R A T IN G S Symbol R a tin g Emitter-Base Voltage Collector Current (Continuous) V CES VCEO
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MP2060
MF2063
MP20S1
MP2062
MP2063
MP2060
MP2061
MP20S2
MP2063
100-C
MP2061
Germanium power
*p2861
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transistor K52
Abstract: germanium transistor pnp GERMANIUM SMALL SIGNAL PNP TRANSISTORS mullard germanium pnp germanium transistor mullard 160 germanium transistor GERMANIUM SMALL SIGNAL TRANSISTORS power ac audio transistor small signal transistor
Text: EDISW A N MAZDA X C IO I AUDIO OUTPUT TRANSISTOR Germanium PNP Junction Type TENTATIVE GEN ERAL The X C IO I is a germanium pnp junction type transistor suitable for use in Audio Output stages. The element of the transistor is hermetically sealed in a small can.
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