GaAs tunnel diode
Abstract: Germanium Schottky diode tunnel diode GaAs SMGS11 germanium diode germanium diodes Microwave detector diodes SMS202
Text: FOR IMMEDIATE RELEASE: January 11, 2010 CONTACT: Jim Godbout Aeroflex / Metelics VP Sales and Marketing 408-328-3321 [email protected] Teresa Farris Aeroflex / Metelics MARCOM Manager 719-594-8035 [email protected] PLASTIC SMT SCHOTTKY MIXER/DETECTOR DIODES
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GaAs tunnel diode
Abstract: Gallium Arsenide tunnel diode high power pin diode METELICS DETECTOR DIODE germanium diode Germanium Power Diodes tunnel diode GaAs msat-p25 Press Fit Diode Metelics
Text: FOR IMMEDIATE RELEASE: December 1, 2009 CONTACT: Jim Godbout Aeroflex / Metelics VP Sales and Marketing 408-328-3321 [email protected] Teresa Farris Aeroflex / Metelics MARCOM Manager 719-594-8035 [email protected] NEW PLASTIC SURFACE MOUNT SWITCH AND ATTENUATOR DIODES
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BGT24MTR12
Abstract: 24 GHz transceiver microwave transceiver 3.9 B7HF200 germanium microwave antenna transceiver Germanium Amplifier Circuit diagram sun resistor 400 mohm prescaler ghz K band VCO MMIC
Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BGT24MTR12
VQFN32-9)
BGT24MTR12
VQFN32-9
VQFN32-9
VQFN32-9-PO
24 GHz transceiver
microwave transceiver 3.9
B7HF200
germanium
microwave antenna transceiver
Germanium Amplifier Circuit diagram
sun resistor 400 mohm
prescaler ghz
K band VCO MMIC
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T0825
Abstract: No abstract text available
Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.0, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BGT24MTR12
VQFN32-9)
BGT24MTR12
VQFN32-9
VQFN32-9
VQFN32-9-PO
T0825
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BGT24MTR11
Abstract: B7HF200 sun resistor 400 mohm 24 GHz transceiver VQFN32-9 IFX VQFN32
Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BGT24MTR11
VQFN32-9
BGT24MTR11
VQFN32-9-PO
VQFN32-9
B7HF200
sun resistor 400 mohm
24 GHz transceiver
IFX VQFN32
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Untitled
Abstract: No abstract text available
Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Preliminary Data Sheet Revision 2.3, 2012-09-19 RF & Protection Devices Edition 2012-09-19 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved.
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BGT24MTR11
VQFN32-9
BGT24MTR11
VQFN32-9-PO
VQFN32-9
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Untitled
Abstract: No abstract text available
Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGT24MTR12
VQFN32-9)
BGT24MTR12
VQFN32-9-PO
VQFN32-9
VQFN32-9
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Untitled
Abstract: No abstract text available
Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.2, 2014-07-15 RF & Protection Devices Edition 2014-07-15 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGT24MTR12
VQFN32-9)
BGT24MTR12
VQFN32-9-PO
VQFN32-9
VQFN32-9
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Untitled
Abstract: No abstract text available
Text: BGT24MTR12 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGT24MTR12
VQFN32-9)
BGT24MTR12
VQFN32-9-PO
VQFN32-9
VQFN32-9
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Untitled
Abstract: No abstract text available
Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.1, 2014-03-25 RF & Protection Devices Edition 2014-03-25 Published by Infineon Technologies AG 81726 Munich, Germany 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGT24MTR11
VQFN32-9)
BGT24MTR11
VQFN32-9-PO
VQFN32-9
VQFN32-9
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Untitled
Abstract: No abstract text available
Text: BGT24MTR11 Silicon Germanium 24 GHz Transceiver MMIC Data Sheet Revision 3.0, 2013-07-08 RF & Protection Devices Edition 2013-07-08 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGT24MTR11
VQFN32-9)
BGT24MTR11
VQFN32-9-PO
VQFN32-9
VQFN32-9
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transistor IR 9317
Abstract: 84121 photo thyristor audio MAGNETIC HEAD MAGNETIC HEAD circuit audio oscillator tunnel diode 9315 DATASHEET TUNNEL DIODE MAGNETIC HEAD circuit oscillator tunnel diode datasheet
Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material
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08-Jan-04
transistor IR 9317
84121
photo thyristor
audio MAGNETIC HEAD
MAGNETIC HEAD circuit audio
oscillator tunnel diode
9315
DATASHEET TUNNEL DIODE
MAGNETIC HEAD circuit
oscillator tunnel diode datasheet
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U1001
Abstract: pHEMT transistor MTBF 84-1LMI XU1001 U100-1 U-10-01 77598
Text: 36.0-40.0 GHz GaAs MMIC Up-Converter U1001 July 2001 - Rev 7/27/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 4.0 dB Typical Small Signal Gain 35 dB Typical LO/RF Isolation Low DC Power Consumption Operates at +3.0 VDC 2.90 mm X 2.50 mm Die Size
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U1001
MIL-STD-883
U1001
pHEMT transistor MTBF
84-1LMI
XU1001
U100-1
U-10-01
77598
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transistor R1001
Abstract: mixers circuit using 90 degree hybrid presidio components R1001 XR1001 84-1LMI XH1000 38REC
Text: 36.0-40.0 GHz GaAs MMIC Receiver R1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Sub-Harmonic Receiver 5.0 dB Conversion Gain 4.0 dB Noise Figure 12.0 dB Image Rejection 100% On-Wafer RF and DC Testing 100% Visual Inspection to MIL-STD-883 Method 2010
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R1001
01-May-02
MIL-STD-883
transistor R1001
mixers circuit using 90 degree hybrid
presidio components
R1001
XR1001
84-1LMI
XH1000
38REC
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transistor R1001
Abstract: R1001 84-1LMI XR1001
Text: 36.0-40.0 GHz GaAs MMIC Receiver R1001 August 2001 - Rev 8/01/01 Features Chip Device Layout 36.0-40.0 GHz Frequency Range 5.0 dB Typical Small Signal Conversion Gain 4.0 dB Typical Noise Figure 12.0 dB Typical Image Rejection 2.90 mm X 2.50 mm Die Size 100% On-Wafer RF and DC Testing
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R1001
MIL-STD-883
transistor R1001
R1001
84-1LMI
XR1001
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APC UPS CIRCUIT DIAGRAM rs 1500
Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO
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AF106
AF106
APC UPS CIRCUIT DIAGRAM rs 1500
APC UPS es 500 CIRCUIT DIAGRAM
APC UPS 650 CIRCUIT DIAGRAM
schematic diagram APC back ups XS 1000
TAA550
APC UPS CIRCUIT DIAGRAM
UPS APC rs 1000 CIRCUIT diagram
UPS APC rs 800 CIRCUIT diagram
APC Back ES 500 UPS circuit diagram
CIRCUIT DIAGRAM APC UPS 700
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BAV46
Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
Text: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100
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AAY34
S0D-42
BAT10
SAT11
BAT39
CV7762)
BAT39A
OD-42
BAT50R
SO-26
BAV46
bat59
Pin connection of bk 1085
BAT39
BAT52
BAV72
BAW96
BAV71
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germanium rectifier diode
Abstract: Germanium rectifier CV710 germanium diode CV7109 microwave mixer diode CV7108 Germanium Amplifier noise diode Germanium Mixer Diodes
Text: GERMANIUM MICROWAVE MIXER DIODE GEM3 GEM4 C oaxial point contact germ anium diodes intended fo r u se in pretuned c en tim e tric low n o is e m ix e r c ir c u its u p to l2 G c /s . The sp re a d of adm ittance fig u re s at 12G e/s is v e ry sm a ll. GEM3 and 4 a re the com m ercial
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12Gc/s
CV7108
CV7109
SO-26
spot100
500Mc/s
10Mc/s
9375Mc/s
germanium rectifier diode
Germanium rectifier
CV710
germanium diode
microwave mixer diode
Germanium Amplifier
noise diode
Germanium Mixer Diodes
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Microwave Mixer Diodes
Abstract: dc/tx/1/2/1257/AAY56 AAY56 mullard germanium Germanium Mixer Diodes CV7772 germanium rectifier magnetron magnetron S BAND Mullard
Text: GERMANIUM MICROWAVE MIXER DIODES AAY56 AAY56R T E N T A T IV E D A T A C oaxial point contact germ anium diodes intended fo r u se in p re -tu n e d c e n trim e tric low n o ise m ix e r c irc u its u p to 4 G H z . The sp re a d of adm it tan c e fig u re s at 4GHz is v e ry s m a ll. AAY56 andA A Y 56R are the co m m e rc ial
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AAY56
AAY56R
andAAY56Rare
CV7771
CV7772
SO-26
AAY56
100MHz
Microwave Mixer Diodes
dc/tx/1/2/1257/AAY56
mullard germanium
Germanium Mixer Diodes
germanium rectifier
magnetron
magnetron S BAND
Mullard
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NKT677
Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers
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AC113
AC155
AC156
AC165
AC128
AC154
AC166
AC167
AC177
AD140
NKT677
NKT612
ORP12
sft353
GEX34
1/equivalent transistor ac127
OC171 equivalent
AD149
NKT275
ac128
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backward diode
Abstract: tunnel diode General Electric "backward diode"
Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a
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CT3508-1
backward diode
tunnel diode General Electric
"backward diode"
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AAY50
Abstract: AAY50R K1007 Germanium diode Mullard
Text: M ICROW AVE M IXER DIODES AAY50 AAY50R TENTATIVE DATA Coaxial germanium point-contact diodes for u se in pre-tuned X-band low noise m ixer c irc u its. The AAY50 and AAY50R a re intended as low noise re tro fits at X-band frequencies for coaxial m ixer diodes, types SIM2/5,
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AAY50
AAY50R
AAY50R
SO-26
247in
AAY50-Page
AAY50,
K1007
Germanium diode Mullard
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Silicon Point Contact Diode
Abstract: No abstract text available
Text: TYPICAL D.C. CHARACTERISTICS 36 37 1 Low barrier PDB 1 1 Ze o Bias P D B - 1 i Sta ndard GaAs Setlottky r .♦V ✓ 3 ^ ✓ l / • 4 ik \ " Standard GaAs \ Schottky \ I Low barrier PDB 2 " / X Zero Bia s PDB I 10 -20- ; Voltage N Current /mA 8 / Figure 10. Comparison of the l-V characteristics o f a 'zero bias' PDB diode, a low barrier PDB diode and a standard
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375GHz
DC1596)
OC1301)
-10dB
-20dB
35GHz
150pA.
Silicon Point Contact Diode
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diode 5082-2800
Abstract: hp 5082-2800 diode Germanium Schottky diode handling of beam lead diodes 5082-2837
Text: Whpl mi'tiM H E W LE T T PA C K A R D Beam Lead Schottky Diode Technical Data 5082-2837 Features • Fast Switching • High Breakdown • Beam Lead Equivalent of 5082-2800 • Platinum Tri-Metal System • Wide Temperature Range • SIOa Passivation Description
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