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    GERMANIUM TRANSISTOR PHILIPS Search Results

    GERMANIUM TRANSISTOR PHILIPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    GERMANIUM TRANSISTOR PHILIPS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BPW50

    Abstract: tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


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    PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70 PDF

    GaAs tunnel diode

    Abstract: tunnel diode GaAs darlington transistor for audio power application photo thyristor diode tunnel DATASHEET TUNNEL DIODE Tunnel diode tunnel diode high frequency photocoupler Thyristor transistor power
    Text: Philips Semiconductors Pro Electron Type Numbering System General PRO ELECTRON TYPE NUMBERING SYSTEM U Basic type number W surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


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    MRF947T1 equivalent

    Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
    Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi


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    2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545 2SC3583 2SC3585 2SC4093 2SC4094 MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L PDF

    MPC601

    Abstract: MC6800 MC68000 MC68020 MPC7455 MPC860 MC603 90-nm CMOS standard cell library process technology 65-nm CMOS standard cell library process technology
    Text: Freescale Semiconductor ASIC Solutions Scalability Meets Flexibility. Flexible Customer Engagement Model A hallmark of Freescale’s ASIC capability is our flexible customer engagement model and design flow. We support the use of industry-standard tools for conformance with customer


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    MPC601, MPC860 MPC7455 BR1587 MPC601 MC6800 MC68000 MC68020 MC603 90-nm CMOS standard cell library process technology 65-nm CMOS standard cell library process technology PDF

    SNW-EQ-611

    Abstract: construction of varactor diode tunnel diode GaAs Germanium Transistor
    Text: GENERAL Page Quality 2 Pro Electron type numbering system 2 Rating systems 3 Letter symbols 4 Thermal considerations 7 Handling MOS devices 8 Philips Semiconductors Small-signal and Medium-power MOS transistors General necessary corrective action. Process steps are under


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    SNW-EQ-611 MLB049 construction of varactor diode tunnel diode GaAs Germanium Transistor PDF

    RF TRANSISTOR 10GHZ

    Abstract: bipolar transistor ghz s-parameter tv sirius RF NPN POWER TRANSISTOR C 10-12 GHZ DSP 10 ghz DSP frequency 10 ghz MIPI omnivision RF TRANSISTOR 10GHZ low noise sdars ARM926EJ-S
    Text: BFP720F SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, 2009-03-13 Industrial & Multimarket Edition 2009-03-13 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer


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    BFP720F BFP720F: RF TRANSISTOR 10GHZ bipolar transistor ghz s-parameter tv sirius RF NPN POWER TRANSISTOR C 10-12 GHZ DSP 10 ghz DSP frequency 10 ghz MIPI omnivision RF TRANSISTOR 10GHZ low noise sdars ARM926EJ-S PDF

    pnx8316

    Abstract: tda10046 china car DVD player program ic latest research topics in microcontroller technology PNX83 industrial automation using cellphone bgb202 tda10046 tuner TDA8920B nexus s smartmx
    Text: World News Volume 14 Semiconductors Number 1 Distribution Focus February - March 2005 Inside World News page Identification 2&3 Research 3 Distribution 4 to 8 MultiMarket Semiconductors 9 Automotive 10 Connectivity 10 Products in brief 11 Communications 12


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    DIODE BZW70

    Abstract: Germanium Diode aa112 cqy17 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor thyristor smd AA112 germanium diode smd
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


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    BZW10-15B. BYT-100 -100R. DIODE BZW70 Germanium Diode aa112 cqy17 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor thyristor smd AA112 germanium diode smd PDF

    BPW50

    Abstract: tda1000 74LS00A
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


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    PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 74LS00A PDF

    tda1000

    Abstract: TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device X This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


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    PCF1105WP: GMB74LS00A-DC; 74LS00A; TDA1000P: SAC2000: tda1000 TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112 PDF

    tda1000

    Abstract: BPW50 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR cqy17 74LS00A BZW10-15 DIODE BZW70 BPW50-12 PCF1105WP
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


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    PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 BPW50 Germanium Diode aa112 BD232 PHILIPS SEMICONDUCTOR cqy17 74LS00A BZW10-15 DIODE BZW70 BPW50-12 PCF1105WP PDF

    tda1000

    Abstract: 74LS00 20 PIN LEADLESS CHIP CARRIER THICK FILM smd dual diode code 1c
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


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    PCF1105WP: GMB74LS00A-DC; 74LS00A; TDA1000P: SAC2000: tda1000 74LS00 20 PIN LEADLESS CHIP CARRIER THICK FILM smd dual diode code 1c PDF

    tda1000

    Abstract: 74LS00A BPW50 Germanium Diode aa112
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


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    PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 74LS00A BPW50 Germanium Diode aa112 PDF

    tda1000

    Abstract: Germanium Diode aa112 BPW50 PCF-1105WP 74LS00A PCF1105 BZW70 9v1 zener diode circuits
    Text: Philips Semiconductors Semiconductors for Telecom systems QUALITY General • acceptance tests on finished products to verify conformance with the device specification. The test results are used for quality feedback and corrective actions. The inspection and test requirements are


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    PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: tda1000 Germanium Diode aa112 BPW50 PCF-1105WP 74LS00A PCF1105 BZW70 9v1 zener diode circuits PDF

    NKT677

    Abstract: NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128
    Text: CONTENTS p ag e Mazda Range of Audio Transistors 2 Recommended Line-ups for Audio Amplifiers 3 Key to Symbols 4 Do’s and Dont’s 6 Device Data 7 European Nomenclature 34 Device Identification 35 Comparables List 47 Replacing Selenium Rectifiers 62 Replacing Valve Rectifiers


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    AC113 AC155 AC156 AC165 AC128 AC154 AC166 AC167 AC177 AD140 NKT677 NKT612 ORP12 sft353 GEX34 1/equivalent transistor ac127 OC171 equivalent AD149 NKT275 ac128 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Pro Electron type numbering system for Disctrete Semiconductors 1 BASIC TYPE NUMBER General LETTER This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


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    BPW50

    Abstract: BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70
    Text: Philips Semiconductors General Pro electron type numbering PRO ELECTRON TYPE NUMBERING SYSTEM T Control or switching device; e.g. thyristor, low power; with special third letter U Transistor; power, switching W Surface acoustic wave device Basic type number


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    the10. BPW50-6, BPW50-9, BPW50-12. BZW70-9V1 BZW10-15B. BLU80-24. BPW50 BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70 PDF

    transistor cross reference

    Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
    Text: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC


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    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Small-signal Field-effect Transistors QUALITY General section • Acceptance tests on finished products to verify conformance with the device specification. The test results are used for quality feedback and corrective


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    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors General Small-signal Field-effect Transistors QUALITY Total Quality Management Philips Semiconductors is a Quality Company, renowned for the high quality of our products and service. We keep alive this tradition by constantly aiming towards one


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    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Video Transistors and Modules for Monitors QUALITY Total Quality Management Philips Semiconductors is a Quality Company, renowned for the high quality of our products and service. We keep alive this tradition by constantly aiming towards one


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    spice germanium diode

    Abstract: SNW-EQ-611
    Text: Philips Semiconductors Small-signal Transistors QUALITY Total Quality Management Philips Semiconductors is a Quality Company, renowned for the high quality of our products and service. We keep alive this tradition by constantly aiming towards one ultimate standard, that of zero defects. This aim is guided


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    lm 7803

    Abstract: Mextram 504 Mextram 7E21 DEVICE SILICON TWIN TRANSISTOR
    Text: IEEE BCTM1.3 Explorations for High Performance SiGe-Heterojunction Bipolar Transistor Integration P. Deixler ', H.G.A. Huizing, J.J.T.M. Donkers, J.H. Klootwijk, D. Hartskeerl, W.B. de Boer ', R J. Havens, R. van der Toom, J.C.J. Paasschens, W.J. Kloosterman, J.G.M. van Berkum, D. Terpstra and J.W. Slotboom


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    RF power transistors cross reference

    Abstract: transistors cross reference list HF RF Power Transistors cross reference rf transistors cross reference
    Text: Philips Semiconductors RF Wideband Transistors Generai section QUALITY • Acceptance tests on finished products to verify conformance with the device specification. The test results are used for quality feedback and corrective actions. The inspection and test requirements are


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    MEA471 OT323 OT143 OT143R OT143, OT143R OT223 RF power transistors cross reference transistors cross reference list HF RF Power Transistors cross reference rf transistors cross reference PDF