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    GFC36V5258 Search Results

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    GFC36V5258 Price and Stock

    Mitsubishi Electric MGFC36V525801

    5.2-5.8 GHZ BAND 4W INTERNALLY MATCHED GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
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    ComSIT USA MGFC36V525801 15
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    Mitsubishi Electric MGFC36V525851

    RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA MGFC36V525851 4
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    GFC36V5258 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GFC36V5258 5 .2 ~ 5 .8 G H z BAND 4W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The GFC36V5258 is an internally impedance-matched GaAs power FET especially designed fo r use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		GFC36V5258 MGFC36V5258 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 36V S 258 5 .2 —5 .8G H z BAND 4 W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G F C 3 6 V 5 2 5 8 is an internally impedance-matched GaAs power F E T especially designed for use in 5.2 ~ 5.8 G H z band amplifiers. The herm etically sealed metal-ceramic


    OCR Scan     		PDF